The invention discloses a method for directly growing graphene on an insulating substrate through remote catalysis of copper particles. Specifically, the method comprises the following steps: uniformly coating a high-temperature-resistant insulating substrate of silicon dioxide, aluminum oxide, aluminum nitride, magnesium oxide, zirconium oxide, boron carbide or silicon carbide with cupric acetate in a steeping manner, and by using a chemical vapor deposition method, implementing remote assistant in-situ catalytic growth of graphene by using copper nanoparticles generated from the cupric acetate at high temperature, thereby preparing a graphene composite conductive material. By adopting the method, continuous, large-scale and low-defect graphene can be generated, complex transfer procedures are avoided, the graphene can grow along the structure of a substrate in a full-wrapping manner, duplication of the substrate structure can be achieved by using the graphene, and the prepared material can be used in multiple fields such as the photovoltaic industry and the electric conduction industry.