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Magnetic skyrmion writing method, information storage device and reading system

A magnetic skyrmion, information storage technology, applied in information storage, static memory, digital memory information and other directions, can solve the problem of not meeting the requirements of high-density information storage

Pending Publication Date: 2021-09-14
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Usually, a single topological magnetic structure can generate magnetic skyrmions through spin-polarized current to realize the information storage of "1" and "0", which cannot meet the current requirements for high-density storage of information.

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Embodiment Construction

[0032] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the application are given in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terminology used herein in the specification of the application is only for the purpose of describing specific embodiments, and is not intended to limit the application.

[0034] It can be understood that the "connection" in the following embodiments should be understood a...

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Abstract

The invention relates to a magnetic skyrmion writing method, an information storage device and a reading system. The magnetic skyrmion writing method comprises the steps: determining the target number of to-be-written magnetic skyrmions according to to-be-stored data, wherein the target number corresponds to the to-be-stored data; applying a target voltage to the topological magnetic structure to enable the topological magnetic structure to generate a target number of magnetic skyrmions, wherein the target voltage corresponds to the target number, wherein the topological magnetic structure comprises a ferroelectric substrate layer; a voltage driving unit which is connected with the ferroelectric substrate layer and is used for applying voltage to the ferroelectric substrate layer; and a magnetic layer which is arranged on the ferroelectric substrate layer and is used for generating a target number of magnetic skyrmions in response to the target voltage regulation and control. According to the invention, more complex coding can be realized by regulating and controlling the change of the number on a single topological magnetic structure, and the density and efficiency of information storage can be greatly improved.

Description

technical field [0001] The invention relates to a magnetic skyrmion information storage device, in particular to a magnetic skyrmion writing method, an information storage device and a reading system. Background technique [0002] With the rapid development of the information age and the explosive growth of data volume, higher requirements are placed on information storage devices. With the shrinking of the material size of current traditional magnetic storage devices, the development of traditional information storage materials has encountered a bottleneck due to the size limit generated by quantum effects and the resulting thermal effects. Spintronic technology introduces a new degree of freedom of electron spin. Spintronic devices have the advantages of low static power consumption, unlimited high-speed reading and writing, and non-volatile storage. They are considered to be the key technology to break through the current bottleneck. , It is expected to greatly reduce th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16G11C11/22H01L43/08H10N50/10
CPCG11C11/1675G11C11/1673G11C11/22H10N50/10
Inventor 侯志鹏卫智健王亚栋
Owner SOUTH CHINA NORMAL UNIVERSITY
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