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A Magnetic Skyrmion-Based AND Logic Gate and NAND Logic Gate

A technology of magnetic skyrmions and logic gates, applied in the field of logic devices, can solve the problems affecting the secondary use of devices and the retention of skyrmions, and achieve the effect of ensuring stability

Inactive Publication Date: 2020-10-30
CHINA UNIV OF GEOSCIENCES (WUHAN)
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  • Summary
  • Abstract
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Problems solved by technology

The magnetic skyrmion logic devices proposed so far are all straight track structures, and the logic function is realized by driving the skyrmions generated at the input to the output. This structure will cause such devices to make skyrmions after operation Mingzi stays in the device, which affects the secondary use of the device

Method used

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  • A Magnetic Skyrmion-Based AND Logic Gate and NAND Logic Gate
  • A Magnetic Skyrmion-Based AND Logic Gate and NAND Logic Gate
  • A Magnetic Skyrmion-Based AND Logic Gate and NAND Logic Gate

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Embodiment Construction

[0036] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific implementation manners of the present invention will now be described in detail with reference to the accompanying drawings.

[0037] The scheme that the present invention solves the above problems is as follows:

[0038] figure 1 Schematic diagram of the circular magnetic track structure used in this patent: the entire circular track can be divided into four sections, of which 1,3 are straight tracks, 2,4 are curved tracks, and each track is composed of electrode layer 6 , a dielectric layer 7 and a ferromagnetic layer 8, and an MTJ (magnetic tunnel junction 5) is set under the straight track 3, that is, the ferromagnetic layer 8, the insulating layer 9 and the ferromagnetic layer 10 together form an MTJ for detecting ferromagnetic The state of skyrmions in layer 8. As a preferred embodiment of the present invention, the track 1 and the trac...

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Abstract

The invention discloses an AND logic gate and an NAND logic gate based on magnetic skyrmion. The magnetic skyrmion is placed in the annular magnetic racing track. A voltage driving mode is adopted toenable the skyrmion to circularly move in the magnetic racing track, and the state of the skyrmion in the magnetic racing track is read through the magnetic tunnel junction, so that the logic functions of the AND gate and the NAND gate are realized, and the stability of the NOT gate based on the skyrmion and the AND gate in use is ensured.

Description

technical field [0001] The invention relates to the field of logic devices, in particular to an AND logic gate and a NAND logic gate based on magnetic skyrmions. Background technique [0002] AND logic gates and NAND logic gates are relatively common devices in logic devices, and are an indispensable component in digital circuits. Traditional logic devices are generally prepared by CMOS technology. With the improvement of device integration, this The defects of this kind of semiconductor technology are gradually exposed: on the one hand, the leakage current of the transistor increases with the decrease of the size, and the power consumption of the device gradually increases; very difficult. [0003] Magnetic skyrmions are a magnetic structure with topological protection properties in magnetic materials. Due to their nanometer size (the smallest diameter is only a few nanometers) and topological protection (good stability), magnetic skyrmions are highly integrated The infor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/20
CPCH03K19/20
Inventor 晋芳饶恒畅赵植董凯锋宋俊磊莫文琴
Owner CHINA UNIV OF GEOSCIENCES (WUHAN)
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