A Magnetic Skyrmion-Based AND Logic Gate and NAND Logic Gate
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHINA UNIV OF GEOSCIENCES (WUHAN)
- Publication Date
- 2020-10-30
- Estimated Expiration
- Not applicable ยท inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the field of logic devices, in particular to an AND logic gate and a NAND logic gate based on magnetic skyrmions. Background technique
[0002] AND logic gates and NAND logic gates are relatively common devices in logic devices, and are an indispensable component in digital circuits. Traditional logic devices are generally prepared by CMOS technology. With the improvement of device integration, this The defects of this kind of semiconductor technology are gradually exposed: on the one hand, the leakage current of the transistor increases with the decrease of the size, and the power consumption of the device gradually increases; very difficult.
[0003] Magnetic skyrmions are a magnetic structure with topological protection properties in magnetic materials. Due to their nanometer size (the smallest diameter is only a few nanometers) and topological protection (good stability), magnetic skyrmions are highly integrated The infor...