Reconfigurable logic device based on magnetic skyrmion

A magnetic skyrmion and logic device technology, applied in the field of logic gate circuits, can solve difficult logic operations and other problems

Active Publication Date: 2018-03-27
HUAZHONG UNIV OF SCI & TECH
View PDF4 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the logic gate based on the above manufacturing method can only realize the OR operation or the AND operation alone, and it is difficult to complete more complex logic operations.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reconfigurable logic device based on magnetic skyrmion
  • Reconfigurable logic device based on magnetic skyrmion
  • Reconfigurable logic device based on magnetic skyrmion

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The logic device described in Embodiment 1 has a double-layer structure of a heavy metal layer 1 and a ferromagnetic layer 2; the ferromagnetic layer 2 is composed of two nanowire tracks placed in parallel and connected locally, one nanowire track is shorter than the other nanowire track, There are two connections between two parallel nanowire tracks, one is located at the right endpoint of the shorter nanowire track and the non-terminus of the longer nanowire track, and the other is located at the non-terminus of the two parallel nanowire tracks ; An MTJ is respectively placed at the left end of the two parallel nanowire tracks as input terminals 8 and 9, and an MTJ is placed at the other end of the longer nanowire track as output terminal 11; an antiferromagnetic layer 4 is arranged on each MTJ; at the output terminal An output control terminal 5 is set on the antiferromagnetic layer 4 of 11; a transmission control terminal 6 and 7 are respectively set on the two nanow...

Embodiment 2

[0050] The logic device described in Embodiment 2 has a double-layer structure of a heavy metal layer and a ferromagnetic layer; the ferromagnetic layer is composed of two nanowire tracks placed in parallel and partially connected, one nanowire track is shorter than the other nanowire track, and the two parallel nanowire tracks There is a connection between the nanowire tracks, which is located at the right end point of the shorter nanowire track and the non-end point of the longer nanowire track. The shorter nanowire track is located on the upper part of the ferromagnetic layer, and the entire ferromagnetic layer forms a supine " h" type; one MTJ is placed at the left end of the two parallel nanowire tracks as the input terminals 14 and 15, and one MTJ is placed at the other end of the longer nanowire track as the output terminal 16; there is an antiferromagnetic layer on each MTJ; An output control voltage is set on the antiferromagnetic layer of the output terminal 16; a pul...

Embodiment 3

[0055] The logic device described in Embodiment 3 has a double-layer structure of a heavy metal layer and a ferromagnetic layer; the ferromagnetic layer is composed of two nanowire tracks placed in parallel and partially connected, one nanowire track is shorter than the other nanowire track, and the two parallel nanowire tracks There is a connection between the nanowire tracks, which is located at the right end point of the shorter nanowire track and the non-end point of the longer nanowire track. The shorter nanowire track is located in the lower part of the ferromagnetic layer, and the entire ferromagnetic layer forms a "prone" h" type; one MTJ is placed at the left end of the two parallel nanowire tracks as the input terminals 17 and 18, and one MTJ is placed at the other end of the longer nanowire track as the output terminal 19; there is an antiferromagnetic layer on each MTJ; An output control voltage is set on the antiferromagnetic layer of the output terminal 19; a puls...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a reconfigurable logic device based on magnetic skyrmion, and belongs to the technical field of logic gate circuits. The logic device of the invention is a double-layer structure of a heavy metal layer and a ferromagnetic layer; the ferromagnetic layer is partially connected by two parallel nanowire rails; a MTJ is placed at the left end of the two nanowire rails as an input end, and a MTJ is placed on the right end of one of the nanowire rails as an output end; a voltage or a current pulse is applied to the input end to produce the skyrmion; the output end is used to detect the skyrmion; positive and negative voltages or current pulses are applied to an output control end to realize the output of the high and low potentials of the output end; and two transmission control ends are arranged between the two connection sites off the nanowire rails. The reconfigurable logic device based on magnetic skyrmion applies the combination of voltages or current of differentstates to the output control end and the transmission control end to achieve and, or, non, and-non or non-and logical functions.

Description

technical field [0001] The invention belongs to the technical field of logic gate circuits, and more specifically relates to a reconfigurable logic device based on magnetic skyrmions. Background technique [0002] Traditional microelectronic devices work based on the charge transport of electrons, while spintronic devices store, transmit and process information based on the spin properties of electrons. Compared with traditional microelectronic devices, spintronic devices have the advantages of high storage density, low power consumption, fast response speed, and non-volatility. Magnetic Skyrmion is a topological spin structure in a surrounding shape, which is generated at the ferromagnetic layer / heavy metal layer interface. Its characteristic is that the center spins down, the peripheral spins up, and the middle area gradually transitions. Skyrmions can be regarded as a quasiparticle that carries and transmits information and can be generated and detected using a magnetic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/177
CPCH03K19/17728
Inventor 游龙罗时江李欣
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap