Heat-assisted magnetic skyrmion memory and data writing method

Abstract

The invention discloses a heat-assisted magnetic skyrmion memory, which belongs to the technical field of digital circuits. The memory comprises a pinning layer, a tunneling layer, a free layer and aheavy metal layer which are stacked in sequence; the pinning layer, the tunneling layer and the free layer form a magnetic tunnel junction; both the pinning layer and the free layer have perpendicularmagnetic anisotropy; the pinning layer and the tunneling layer are of cylindrical structures, and the film surfaces of the pinning layer and the tunneling layer are both smaller than the film surfaceof the free layer; the pinning layer and the tunneling layer are used for injecting one-way local current into the free layer to induce generation of skyrmion in the free layer or annihilate skyrmionin the free layer; the film surface shape of the heavy metal layer is the same as that of the free layer, and the heavy metal layer is used for generating an interface DMI with the free layer to stabilize the skyrmion; thermal barrier layers are stacked on the outer side of the pinning layer and the outer side of the heavy metal layer respectively, and the pinning layer and the heavy metal layerare both made of materials with low heat conductivity coefficients and used for improving heating efficiency. Compared with a traditional heat-assisted magnetic memory, the heat-assisted magnetic skyrmion memory has the advantages that the heating temperature can be effectively reduced, and the reliability of the memory is improved.

Description

technical field [0001] The invention belongs to the technical field of digital circuits, and more particularly, relates to a thermally assisted magnetic skyrmion memory and a data writing method. Background technique [0002] Spin-transfer torque magnetic random access memory (STT-MRAM) has become one of the most promising non-volatile memory technologies due to its advantages of low power consumption, non-volatility, and small cell area. The magnetic tunnel junction is the core storage unit of STT-MRAM. It is a sandwich structure composed of a ferromagnetic pinned layer, an oxide tunneling layer, and a ferromagnetic free layer. The magnetization direction in the free layer of the magnetic tunnel junction is reversed by applying a write current. , to realize the data write operation. In order to realize the reversal of the magnetization direction in the free layer, the write current needs to reach a certain strength, which will lead to higher power consumption on the one ha...

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Problems solved by technology

[0004] However, heat-assisted magnetic memory needs to heat the device to a very high temperature (generally over 300°C) during the write operation, which will cause thermal breakdown of the magnetic tunnel junction and cause thermal crosstalk to adjacent cells in the integrated array. , which seriously affects the reliability of memory devices

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