37results about How to "Reduce thermal crosstalk" patented technology

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

The present invention aims to provide a three-dimensional memory and a preparation method thereof. The three-dimensional memory provided by the present invention is formed by vertically stacking a plurality of layers of memories. Each layer comprises: a strip electrode; an electric heating insulating layer; a small hole in the middle of the electric heating insulating layer; and an n-type semiconductor material plug column and a p-type storage material plug column inside the small hole. The memory can independently carry out reading and writing on each unit. The memory selects a p-type storage medium and an n-type semiconductor material to form a pn junction, the selected p-type storage material has dual functions and is not only the storage medium, but also a part of a gate tube. The memory is provided with the gate tube without using an additional transistor as a gating switch, so that a unit area can be greatly reduced, storage density can be greatly improved, and meanwhile, current leakage and thermal crosstalk can be effectively reduced.

The invention provides a waveguide grating filter. The waveguide grating filter comprises a substrate (1) and a waveguide (2), and further comprises a beam column structure (3) used for supporting thewaveguide (2), wherein the beam column structure (3) comprises column structures (302) and a beam structure (301); the column structures (302) are positioned on two sides of the waveguide (2) and arranged on the substrate (1); the beam structure (301) is used for connecting the column structures (302); an air gap (201) is formed between the waveguide (2) and the substrate (1). According to the waveguide grating filter disclosed by the invention, spectral characteristics of the waveguide grating filter are changed by adopting a thermal tuning method, a local thermal isolation structure betweenthe waveguide and the substrate is realized by forming the air gap below the waveguide, and vertical mobility of the heat is obstructed, so that the power consumption of the waveguide grating filteris reduced. The waveguide grating filter disclosed by the invention has the advantages of being low in power consumption, high in tuning efficiency, fast in tuning, stable in structure, easy to integrate and the like, and has obvious application value in a wavelength division multiplexing system.

The invention disclose a thermally driven MEMS micro-mirror and a 1*N thermally driven MEMS micro-mirror array. The thermally driven MEMS micro-mirror is composed of a mirror surface, micro-mirror frames and electrical heating driving arms which are connected with the mirror surface and the micro-mirror frames. The micro-mirror frames are arranged at the opposite sides of the mirror surface in pair. The mirror surface is made to rotate by exerting bias voltage on the electrical heating driving arms. The 1*N thermally driven MEMS micro-mirror array comprises N thermally driven micro-mirror units and a substrate provided with a cavity. Each pair of micro-mirror frames are arranged on the two opposite sides on the corresponding mirror surface and are fixed to the cavity of the substrate, and the corresponding mirror surface is made to rotate by exerting bias voltage on the corresponding electrical heating driving arms. The N thermally driven micro-mirror units are arranged at an equal interval and form the 1*N micro-mirror array. According to the thermally driven MEMS micro-mirror and the 1*N thermally driven MEMS micro-mirror array, each micro-mirror is controlled independently through the corresponding electrical heating driving arms which are located on the two sides of the micro-mirror, and the length of each electrical heating driving arm can be adjusted so that design with different angle measuring ranges can be obtained; in addition, according to the design, the 1*N thermally driven MEMS micro-mirror array is driven by low voltage, is high in mirror surface filling rate and wide in measuring range, and therefore heat crosstalk can be effectively reduced.

The invention discloses an asymmetric annular microelectrode phase change storage unit and device. The asymmetric annular microelectrode phase change storage unit comprises a lower electrode layer, a first insulating layer, a phase change function layer, a second insulating layer, and an upper electrode layer from bottom to top, the first insulating layer is provided with a small hole, a metal annular sidewall and an insulating core are arranged in the small hole, the phase change function layer is contacted with a lower electrode through the metal annular sidewall in the small hole of the first insulating layer, the second insulating layer is also provided with a small hole, and an upper electrode is contacted with the phase change function layer through the small hole of the second insulating layer. The asymmetric annular microelectrode phase change storage unit is characterized in that the lower electrode is an annular electrode, an electrode core is filled with an insulating material, and the center line of the small hole of the first insulating layer, the center line of the phase change function layer, and the center line of the small hole of the second insulating layer are all not in the same straight line. According to the asymmetric annular microelectrode phase change storage unit and device, the contact area of the lower electrode and the phase change material is greatly reduced, the operation current is reduced, the thermal property is good, the original property of the device can be maintained, the power consumption is reduced, and the thermal crosstalk is reduced.

The invention relates to the technical field of optical communication, and in particular discloses a parallel tunable laser module and a method for achieving frequency fine tuning compensation of each channel. According to the method, an instruction for frequency fine tuning is received by a firmware in a central processor of the parallel tunable laser module, a target frequency is adjusted by a biased current open loop of a DFB array laser chip, meanwhile, a current control circuit controls power and frequency of the parallel tunable laser module according to the instruction of the central processor, a temperature control circuit adjusts according to the instruction of the central processor, so that the DFB array laser chip reaches a required working temperature. By means of the characteristic of biased current fine tuning frequency of a DFB laser and thermal crosstalk characteristic between the channels of the parallel tunable laser module, the target frequency is slightly tuned by the open loop, the frequency fine tuning compensation between the laser module channels is increased, thus, the thermal crosstalk between the laser module channels is reduced, and finally, the purposes of reducing material cost, simplifying the production process and reducing the laser module size are achieved.

An embodiment of the invention provides a non-refrigeration infrared imaging focal plane array detector comprising a transparent substrate, a substrate heat transfer structure with a high thermal-conductance coefficient and a micro-cantilever unit, wherein the micro-cantilever unit is laid on the transparent substrate through the substrate heat transfer structure in a nested manner. The micro-cantilever unit comprises a thermal deformation structure, a reflector board composite structure and a supporting structure. A double-material structure is adopted for the reflector board composite structure, wherein one side, which faces the transparent substrate, of the reflector board composite structure is made of a metal material; and one layer, which faces a target object, of the reflector board composite structure is made of a material with a high infrared absorption coefficient. When the target object is detected through the detector, infrared light from the target object directly irradiates to an infrared absorption layer of the detector, thereby improving measuring sensitivity. Additionally, because of the transparent substrate adopted in the detector, emptying of the substrate below the micro-cantilever unit is not required, and thus the technique complexity is reduced.

The invention relates to a composite energy saving decorative board and its manufacturing method. It forms the etching stop layer on the first liner of the concave, combines the stop layer to the second liner surface to form a cavity chamber between the etching layer and the second liner, then remove the first liner. After removing the first liner, form outside frame on the second liner to form the fluid ejection device. It can form the first, the second and the third oxidization layers on the etching stop layer and inside the chamber. Thanks to this device, it can increase isolation, reduce thermal crosstalk and improve its heat utilization rate and ink jet effect.

The invention discloses a heat-assisted magnetic skyrmion memory, which belongs to the technical field of digital circuits. The memory comprises a pinning layer, a tunneling layer, a free layer and aheavy metal layer which are stacked in sequence; the pinning layer, the tunneling layer and the free layer form a magnetic tunnel junction; both the pinning layer and the free layer have perpendicularmagnetic anisotropy; the pinning layer and the tunneling layer are of cylindrical structures, and the film surfaces of the pinning layer and the tunneling layer are both smaller than the film surfaceof the free layer; the pinning layer and the tunneling layer are used for injecting one-way local current into the free layer to induce generation of skyrmion in the free layer or annihilate skyrmionin the free layer; the film surface shape of the heavy metal layer is the same as that of the free layer, and the heavy metal layer is used for generating an interface DMI with the free layer to stabilize the skyrmion; thermal barrier layers are stacked on the outer side of the pinning layer and the outer side of the heavy metal layer respectively, and the pinning layer and the heavy metal layerare both made of materials with low heat conductivity coefficients and used for improving heating efficiency. Compared with a traditional heat-assisted magnetic memory, the heat-assisted magnetic skyrmion memory has the advantages that the heating temperature can be effectively reduced, and the reliability of the memory is improved.

The invention relates to the temperature adjusting technology of electronic equipment, and can be applied to electronic equipment such as an edge intelligent server used for intelligent transportationor an intelligent power grid or a mobile data center in an intelligent automobile used for vehicle-mounted mobile law enforcement. Specifically, the embodiment of the invention provides a thermoelectric module, a hard disk device and electronic equipment. The thermoelectric module comprises a thermoelectric refrigeration sheet, a cold end substrate and a hot end substrate, the thermoelectric refrigeration sheet is fixedly arranged between the cold end substrate and the hot end substrate, the area of the cold end substrate and the area of the hot end substrate are larger than the area of the thermoelectric refrigeration sheet, and the area, without the thermoelectric refrigeration sheet, between the cold end substrate and the hot end substrate is filled with heat insulation materials. According to the thermoelectric module provided by the invention, the thermal crosstalk between the cold end substrate and the hot end substrate can be reduced, and the refrigeration or heating efficiencyof the thermoelectric module is improved.

The embodiment of the invention discloses a semiconductor device forming method and a semiconductor device. The method comprises the steps of: forming a semiconductor stacking structure; selecting atleast one layer in the semiconductor stacked structure as a to-be-processed layer, and etching the to-be-processed layer in a first direction to form first etching gaps and first phase change structure bodies which are alternately arranged in a second direction, the first direction being perpendicular to the second direction; and forming a first pre-packaging layer on the surface of each first phase change structure body to form the semiconductor device. Both the first pre-packaging layer and the first phase change structure body are provided with carbon elements, so that stable CC chemical bond connection is formed on the surfaces of the first pre-packaging layer and the first phase change structure body.

The present invention relates to an MEMS module (100). The MEMS assembly includes a housing having an internal volume (V), wherein the housing (130) has a sound opening to the internal volume (V), a MEMS component in the housing (130) adjacent to the sound opening (132), and a layer element (138) arranged at least regionally at a surface region (134-1, 136-1) of the housing (130) that faces the internal volume (V), wherein the layer element (138) includes a layer material having a lower thermal conductivity and a higher heat capacity than the housing material of the housing that adjoins the layer element.

The invention discloses a three-dimensional integrated programmable optical filter. The filter comprises a substrate layer, a lightproof layer and a flip-chip bonding layer; the flip-chip bonding layer and the substrate layer are independent chips respectively; a first-stage filter is manufactured on the substrate layer; a second-stage filter is manufactured on the flip-chip bonding layer; the first-stage filter and the second-stage filter are both single-stage tunable optical filters; each single-stage tunable optical filter is formed by cascading a plurality of micro-rings; vertical couplingis adopted between every two adjacent stages of micro-rings, and a layer of lightproof material is arranged between every two adjacent stages of micro-rings. By utilizing a three-dimensional integration technology, the occupied area of the chips is greatly reduced; by utilizing a vertical coupling mode, the transmission efficiency of light is improved, and the transmission loss of the high-ordermicro-ring filter is effectively reduced; the two stages of filters are respectively manufactured on independent chips; a product with the best performance can be obtained through screening and testing; and the thermal crosstalk of the thermo-optic effect can be reduced to the minimum.