37results about How to "Reduce thermal crosstalk" patented technology

The invention discloses a silicon-based hybrid integration laser radar chip system. According to a light path sequence, the transmitting terminal of the system comprises a tunable narrow linewidth laser source, a silicon nitride beam splitter, a silicon-based phase shifter array and a silicon nitride one-way transmitting antenna array in sequence. According to a principle that the light path is reversible, the receiving terminal of the system comprises a silicon nitride one-way receiving antenna array, a silicon nitride beam splitter and a silicon-based coherence receiving module in sequence and also comprises a backup system and an electric domain control processing module. Each module on a silicon platform and a silicon nitride platform realizes multilayer single-chip integration with the help of a silicon / silicon nitride evanescent wave coupler, and a gain chip in a tunable laser source module and silicon nitride waveguide are subjected to hybrid integration through horizontal coupling. By use of the system, through multi-platform multi-field hybrid integration, the high-speed flexible wave beam formation, rotation and directivity receiving of a free space laser signal can be realized in a phased array way. The system does not contain movable devices, and has high integration density, good CMOS (Complementary Metal-Oxide-Semiconductor Transistor) compatibility, low large-scale volume production cost and extremely high practical value.

Techniques for utilizing microstructures to enhance photon absorption in semiconductors are described. Microstructures such as pillars and / or holes effectively increase the effective absorption length, resulting in greater photon absorption. The use of absorption-enhanced microstructures for silicon photodiodes and silicon avalanche photodiodes can achieve bandwidths exceeding 10 Gb / s at photons at a wavelength of 850 nm with quantum efficiencies of about 90% or higher.

The invention provides a silicon-based gas sensitive chip of integrated humiture sensor and a manufacturing method of the silicon-based gas sensitive chip, relating to environment monitoring technology and aiming to solve the problem that a silicon-based chip doesn't have an integrated gas-sensitive unit. A plurality of gas-sensitive units, a temperature sensitive unit, and a humidity sensitive unit are integrated on one N-type monocrystalline silicon wafer, a secondary heat insulation through hole having a rectangular cross section is arranged between every two adjacent units, and in each gas-sensitive unit, a primary heat insulation through hole having a trapezoidal cross section is arranged between every two adjacent electrode lead wires. The four corners of each of the rectangular cross section and the trapezoidal cross section are arranged in an arc transition manner. The chip can monitor the humiture indexes of environment and can monitor various gases, and the two-stage heat insulation can meet the different work temperature requirement of different units. The heat insulation holes are subjected to arc transition instead of sharp angle, so that the array chip has the advantages of multifunctional measurement, good selectivity, high mechanical strength, high reliability, and low power consumption, and is suitable for environment monitoring.

The invention discloses a three-dimensional integrated programmable optical filter, which comprises a substrate layer, an opaque layer and a flip-chip bonding layer. The flip-chip bonding layer and the substrate layer are independent chips, and the first The first-stage filter, the second-stage filter is made on the flip-chip bonding layer, the first-stage filter and the second-stage filter are both single-stage tunable optical filters, and the single-stage tunable optical filter consists of multiple The microrings are cascaded, vertical coupling is adopted between two adjacent stages of microrings, and a layer of opaque material is arranged between adjacent two stages of microrings. The invention utilizes the three-dimensional integration technology to greatly reduce the occupied area of ​​the chip; utilizes the vertical coupling method to improve the transmission efficiency of light, and effectively reduces the transmission loss of the high-order micro-ring filter; the two-stage filters are respectively manufactured on independent chips , can pass the screening test to get the best performance products, and can minimize the thermal crosstalk of thermo-optic effect.