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Multi-quantum-well semiconductor laser and preparation method thereof

A multi-quantum well and semiconductor technology, applied in the field of multi-quantum well semiconductor lasers and their preparation, can solve the problems of low output power and short working life, and achieve high output power, strong heat dissipation and high reliability

Active Publication Date: 2015-06-24
XIAN LIXIN PHOTOELECTRIC SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the current commercial single quantum well semiconductor laser, its output power is still low and its working life is short

Method used

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  • Multi-quantum-well semiconductor laser and preparation method thereof
  • Multi-quantum-well semiconductor laser and preparation method thereof
  • Multi-quantum-well semiconductor laser and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0043] Such as figure 2 and image 3 shown, the double quantum well semiconductor laser, including N + -GaAs substrate 1, N + -GaAs buffer layer 2, N-AlGaAs upper confinement layer 3, InGaP upper waveguide layer 4, GaInAsP first quantum well layer 5, InGaP barrier layer 6, GaInAsP second quantum well layer 7, InGaP lower waveguide layer 8, P- AlGaAs lower confinement layer 9, P-GaAs top layer 10, P ++- GaAs ohmic contact layer 11 . Wherein 51 is the light-emitting region in the first quantum well layer 5, 52 is the non-light-emitting region in the first quantum well layer 5; 71 is the light-emitting region in the second quantum well layer 7, and 72 is the non-light-emitting region in the second quantum well layer 7 Luminous area. The light emitting region 51 of the first quantum well layer and the light emitting region 71 of the second quantum well layer are staggered from each other.

[0044] The manufacturing method according to the double quantum well semiconductor l...

Embodiment 2

[0049] Such as Figure 6 and Figure 7 shown, triple quantum well semiconductor laser, including N + -GaAs substrate 1, N + - GaAs buffer layer 2, N-AlGaAs upper confinement layer 3, InGaP upper waveguide layer 4, GalnAsP first quantum well layer 5, InGaP barrier layer 6, GalnAsP second quantum well layer 7, InGaP barrier layer 12, GaInAsP second quantum well layer Three quantum well layer 13, InGaP lower waveguide layer 8, P-AlGaAs lower confinement layer 9, P-GaAs top layer 10, P ++ - GaAs ohmic contact layer 11 . Wherein 51 is the light-emitting region in the first quantum well layer 5, 52 is the non-light-emitting region in the first quantum well layer 5; 71 is the light-emitting region in the second quantum well layer 7, and 72 is the non-light-emitting region in the second quantum well layer 7 Light-emitting region; 131 is the light-emitting region in the second quantum well layer 7, and 132 is the non-light-emitting region in the second quantum well layer 7. The li...

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Abstract

The invention provides a multi-quantum-well semiconductor laser and a preparation method of the multi-quantum-well semiconductor laser, in order to improve the heat radiation efficiency of the multi-quantum-well semiconductor laser to realize high-power and high-reliability laser output. The multi-quantum-well semiconductor laser comprises a plurality of quantum-well layers and barrier layers arranged among the quantum-well layers. The multi-quantum-well semiconductor laser is characterized in that each quantum-well layer is provided with one or more light-emitting areas, and the light-emitting areas of the adjacent quantum-well layers are mutually staggered. According to the invention, with the adoption of the mode that the light-emitting areas of the quantum-well layers are mutually staggered, the heat cross stalk of an active area is lowered, the heat resistance of the system is reduced, and high-power output of laser can be realized.

Description

technical field [0001] The invention relates to a semiconductor laser device, in particular to a multi-quantum well semiconductor laser and a preparation method thereof. Background technique [0002] Due to the advantages of small size, light weight, electric drive, high electro-optical conversion efficiency and long life, semiconductor lasers have been widely used in industrial processing, military defense, medical treatment, all-solid-state laser pumping and other fields. The development trend of semiconductor lasers is high power, high brightness and long life. At present, most of the commercially available high-power semiconductor lasers are single quantum well semiconductor lasers. The output power of single-bar continuous wave can reach 100W, and the output power of quasi-continuous wave can reach 250W. If the power is further increased, multiple bars must be combined into stacked arrays or The form of the area array, but the volume of the stack array and the area arr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/34H01S5/343
Inventor 张普刘兴胜熊玲玲王贞福刘晖聂志强
Owner XIAN LIXIN PHOTOELECTRIC SCI & TECH
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