An asymmetric annular microelectrode phase-change memory unit and device

Abstract

The invention discloses an asymmetric annular micro-electrode phase-change memory unit and a device, comprising a lower electrode layer, a first insulating layer, a phase-change functional layer, a second insulating layer, and an upper electrode layer from bottom to top; the first insulating layer There is a small hole in the layer, and the metal annular side wall and the insulating core are in the small hole; the phase change function layer is in contact with the lower electrode through the metal annular side wall in the small hole of the first insulating layer; the second insulating layer is also opened with a small hole; the upper electrode is in contact with the phase change functional layer through the small hole in the second insulating layer. Its core structure is characterized in that the lower electrode is a ring-shaped electrode, and the electrode core is filled with insulating material; the centerline of the first insulating layer, the centerline of the phase change functional layer, and the centerline of the second insulating layer are not on the same straight line. The asymmetric annular microelectrode phase-change memory unit and device provided by the present invention greatly reduce the contact area between the lower electrode and the phase-change material, reduce the operating current, have good thermal performance, and can maintain the original performance of the device. At the same time reduce power consumption and reduce thermal crosstalk.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices and phase-change memory, and more specifically relates to an asymmetric annular micro-electrode phase-change memory unit and a device. Background technique [0002] The structure of a phase change memory unit largely determines its performance, including geometric configuration, thickness of phase change film, thickness of electrodes, etc. The contact area S between the bottom electrode and the phase-change material is an important parameter that affects the performance of the phase-change memory. As S decreases, the size of the phase-change region decreases, and the operating current also gradually decreases. Improving the level of semiconductor technology (such as reducing the line width of lithography process) can effectively reduce the contact area, thereby reducing the operating current, but the update of technology requires a lot of cost, so it can be as much as possible from...

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Problems solved by technology

[0005] However, the above existing solutions still have the following technical problems: their minimum size is limited by the minimum size of lithography, and at the same time, the thermal performance of the T-type phase change unit is poor, the heat utilization rate is low, and most of the heat is dissipated. Not only increases power consumption, but also affects the integration of high-density device cell arrays due to thermal crosstalk

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