Microstructure-enhanced absorption photosensitive device

Abstract

Techniques for utilizing microstructures to enhance photon absorption in semiconductors are described. Microstructures such as pillars and / or holes effectively increase the effective absorption length, resulting in greater photon absorption. The use of absorption-enhanced microstructures for silicon photodiodes and silicon avalanche photodiodes can achieve bandwidths exceeding 10 Gb / s at photons at a wavelength of 850 nm with quantum efficiencies of about 90% or higher.

Description

[0001] References to related applications [0002] This patent application claims priority to each of the following applications, and each of the following applications is incorporated herein by reference: [0003] U.S. Provisional Application No. 61 / 826,446, filed May 22, 2013; [0004] U.S. Provisional Application No. 61 / 834,873, filed June 13, 2013; [0005] U.S. Provisional Application No. 61 / 843,021, filed July 4, 2013; and [0006] U.S. Provisional Application No. 61 / 905,109, filed November 15, 2013; [0007] The provisional patent applications referenced above are collectively referred to herein as the "commonly assigned, incorporated applications." technical field [0008] The present invention generally relates primarily to photosensitive devices. More specifically, some embodiments relate to photosensitive devices having microstructure-enhanced absorption properties. Background technique [0009] Fiber optic communications are widely used in applications such ...

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Problems solved by technology

However, both InGaAs devices and Ge devices are relatively expensive and have relatively high multiplication noise compared to silicon

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