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Semiconductor device forming method and semiconductor device

A semiconductor and device technology, which is applied to the formation method of semiconductor devices and the field of semiconductor devices, can solve problems such as poor adhesion between electrodes and packaging layers, programming interference of memory cells, and changes in the composition of phase change materials.

Active Publication Date: 2021-01-05
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in 3D PCM, the adhesion between the phase change material and the electrodes above and below the phase change material and the encapsulation layer is not good, which is easy to cause the phase change material to diffuse along the side wall interface of the electrode material and the composition of the phase change material to change; And the distance between adjacent 3D X-Point memory cells is small, which means that there is potential thermal crosstalk, which will cause programming interference between adjacent memory cells

Method used

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  • Semiconductor device forming method and semiconductor device
  • Semiconductor device forming method and semiconductor device
  • Semiconductor device forming method and semiconductor device

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Effect test

Embodiment 1

[0122] figure 2 A schematic diagram of the implementation flow of the method for forming a semiconductor device provided in the embodiment of the present application, as shown in figure 2 As shown, the method includes the following steps:

[0123] Step S201, forming a semiconductor stack structure.

[0124] Figure 3A A schematic diagram of a three-dimensional structure of a semiconductor stack structure provided in an embodiment of the present application, Figure 3B A schematic cross-sectional structure diagram of a semiconductor stack structure provided in an embodiment of the present application, combined with Figure 3A and 3B As shown, a semiconductor stack structure 31 is deposited on a substrate 30 .

[0125] Here, the substrate 30 is located at the bottom of the entire structure, and the material of the substrate can be selected from silicon (Si), silicon-germanium alloy (SiGe), silicon carbide (SiC), aluminum oxide (Al 2 o 3 ), aluminum nitride (AlN), zinc o...

Embodiment 2

[0137] Figure 4 A schematic diagram of the implementation flow of the method for forming a semiconductor device provided in the embodiment of the present application, as shown in Figure 4 As shown, the method includes the following steps:

[0138] Step S401 , stacking and forming an intermediate electrode layer, a phase change material layer and a top electrode layer sequentially from bottom to top to form a semiconductor stack structure.

[0139] Figure 5A A schematic diagram of a three-dimensional structure of a semiconductor stack structure provided in an embodiment of the present application, Figure 5B A schematic cross-sectional structure diagram of a semiconductor stack structure provided in an embodiment of the present application, combined with Figure 5A and 5B As shown, the semiconductor stack structure 50 at least includes: a top electrode layer 502-1, a phase change material layer 503 and a middle electrode layer 502-2. Wherein, the top electrode layer 502...

Embodiment 3

[0164] Figure 6 A schematic diagram of the implementation flow of the method for forming a semiconductor device provided in the embodiment of the present application, as shown in Figure 6 As shown, the method includes the following steps:

[0165] Step S601, forming a semiconductor stack structure.

[0166] In the embodiment of the present application, the formation of the semiconductor stack structure may be achieved through the following steps:

[0167] Step S6011, stacking and forming an intermediate electrode layer, a phase change material layer and a top electrode layer sequentially from bottom to top.

[0168] Step S6012, forming a gate layer, a bottom electrode layer and a first address line layer under the middle electrode layer.

[0169] Here, the semiconductor stack structure is a stack structure with a certain number of layers formed on the substrate, Figure 7A A schematic diagram of a three-dimensional structure of a semiconductor stack structure provided in...

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Abstract

The embodiment of the invention discloses a semiconductor device forming method and a semiconductor device. The method comprises the steps of: forming a semiconductor stacking structure; selecting atleast one layer in the semiconductor stacked structure as a to-be-processed layer, and etching the to-be-processed layer in a first direction to form first etching gaps and first phase change structure bodies which are alternately arranged in a second direction, the first direction being perpendicular to the second direction; and forming a first pre-packaging layer on the surface of each first phase change structure body to form the semiconductor device. Both the first pre-packaging layer and the first phase change structure body are provided with carbon elements, so that stable CC chemical bond connection is formed on the surfaces of the first pre-packaging layer and the first phase change structure body.

Description

technical field [0001] The embodiment of the present application relates to the field of semiconductor technology, and relates to but not limited to a method for forming a semiconductor device and the semiconductor device. Background technique [0002] In commercial semiconductor devices, such as Three Dimensional Phase Change Memory (3D PCM), word lines (Word Line, WL) and bit lines (Bit Line, BL) are composed of 20nm / 20nm lines or gaps (Line / Space , L / S) pattern formation. Memory cells are placed at intersections between mutually perpendicular WL and BL, forming a cross-point architecture. [0003] In the related art, the 3D PCM memory cell is encapsulated by a thin layer of silicon nitride to prevent the diffusion of the phase change material. However, in 3D PCM, the adhesion between the phase change material and the electrodes above and below the phase change material and the encapsulation layer is not good, which is easy to cause the phase change material to diffuse a...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/84H10N70/231H10N70/801H10N70/821H10N70/041H10N70/011
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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