Asymmetric annular microelectrode phase change storage unit and device

Abstract

The invention discloses an asymmetric annular microelectrode phase change storage unit and device. The asymmetric annular microelectrode phase change storage unit comprises a lower electrode layer, a first insulating layer, a phase change function layer, a second insulating layer, and an upper electrode layer from bottom to top, the first insulating layer is provided with a small hole, a metal annular sidewall and an insulating core are arranged in the small hole, the phase change function layer is contacted with a lower electrode through the metal annular sidewall in the small hole of the first insulating layer, the second insulating layer is also provided with a small hole, and an upper electrode is contacted with the phase change function layer through the small hole of the second insulating layer. The asymmetric annular microelectrode phase change storage unit is characterized in that the lower electrode is an annular electrode, an electrode core is filled with an insulating material, and the center line of the small hole of the first insulating layer, the center line of the phase change function layer, and the center line of the small hole of the second insulating layer are all not in the same straight line. According to the asymmetric annular microelectrode phase change storage unit and device, the contact area of the lower electrode and the phase change material is greatly reduced, the operation current is reduced, the thermal property is good, the original property of the device can be maintained, the power consumption is reduced, and the thermal crosstalk is reduced.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices and phase-change memory, and more specifically relates to an asymmetric annular micro-electrode phase-change memory unit and a device. Background technique [0002] The structure of a phase change memory unit largely determines its performance, including geometric configuration, thickness of phase change film, thickness of electrodes, etc. The contact area S between the bottom electrode and the phase-change material is an important parameter that affects the performance of the phase-change memory. As S decreases, the size of the phase-change region decreases, and the operating current also gradually decreases. Improving the level of semiconductor technology (such as reducing the line width of lithography process) can effectively reduce the contact area, thereby reducing the operating current, but the update of technology requires a lot of cost, so it can be as much as possible from...

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Problems solved by technology

[0005] However, the above existing solutions still have the following technical problems: their minimum size is limited by the minimum size of lithography, and at the same time, the thermal performance of the T-type phase change unit is poor, the heat utilization rate is low, and most of the heat is dissipated. Not only increases power consumption, but also affects the integration of high-density device cell arrays due to thermal crosstalk

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