Memristor based on magnetic skyrmion, and resistance regulation and control method of memristor

Abstract

The invention discloses a memristor based on magnetic skyrmion, and a resistance regulation and control method of the memristor. The memristor sequentially comprises a substrate, a first ferromagneticlayer and a second ferromagnetic array layer from bottom to top, wherein the second ferromagnetic array layer comprises a plurality of second ferromagnetic units arranged in an array mode, each second ferromagnetic unit comprises a middle layer and a second ferromagnetic layer located on the middle layer, the middle layer and the second ferromagnetic layer are of cylinder structures with the samediameter, and the middle layer provides antiferromagnetic coupling for the first ferromagnetic layer and the second ferromagnetic layer. According to the invention, the size of the skyrmion in the memristor is regulated and controlled by applying an external magnetic field, the size of the skyrmion is gradually increased or decreased along with the increase or decrease of the external magnetic field, and the change of the size of the skyrmion directly causes the change of magnetic moment distribution in the memristor, so that the change of the resistance of the memristor is caused; and the memristor is small in size, simple in structure and capable of being integrated in a high-density and large-scale mode, and the change between the high resistance state and the low resistance state is gradually changed, continuous and controllable.

Description

technical field [0001] The invention relates to a resistive memory device, in particular to a memristor based on magnetic skyrmions and a method for regulating its resistance value. Background technique [0002] In 1971, Chinese scientist Cai Shaotang deduced that there is a passive basic circuit element after resistors, capacitors, and inductors. This element represents the relationship between charge and magnetic flux, and it is a memristor. A memristor is also called a memristor. The resistance of a memristor is determined by the amount of charge flowing through it, and the charge can be predicted by measuring its resistance. In 2008, Hewlett-Packard Labs disclosed TiO-based 2 Thin-film memristive devices have realized memristive behavior in a single device for the first time, thus setting off a research boom of memristive devices. [0003] With the development of the semiconductor field, neuromorphic computing that does not rely on the von Neumann architecture is expec...

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But at the same time, there are also disadvantages such as high circuit requirements, high energy consumption, and discontinuous gradual changes between h...

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