8 results about "Racetrack memory" patented technology

A racetrack (RT) memory is disclosed that includes a racetrack layer and at least one read element, where the read element includes a polarity-reversible Josephson superconducting current diode (=JJ).

The invention discloses a skyrmion track memory based on an artificial ferromagnet, and belongs to the technical field of spintronics and nano magnetic devices. The device comprises a heavy metal layer, an artificial ferromagnet layer and a read-write end, the artificial ferromagnet layer is composed of a plurality of parallel Skyrmion strip-shaped racing tracks. Each Skyrmion strip-shaped racing track comprises a lower ferromagnetic film, a non-magnetic middle layer and an upper ferromagnetic film, the upper ferromagnetic film and the lower ferromagnetic film are made of magnetic materials with different saturation magnetization intensities, and the net magnetization intensities of the adjacent Skyrmion strip-shaped racing tracks are positive and negative, so that the Skyrmion in the adjacent racing tracks deflect in opposite directions. The two opposite lateral displacements cancel each other at the boundary, causing the magnetic skyrmion to move along the boundary. According to the invention, the problem of inaccurate positioning caused by the Hall effect of the Skyrmion is solved, the read-write precision, reliability and expandability of the device are remarkably improved, and powerful technical support is provided for high-performance development and practical application of the Skyrmion track memory.

The invention relates to the technical field of time-to-digital converters, and provides a time-to-digital converter based on a magnetic track memory, comprising: a magnetic track memory array having m rows and n columns of units, each unit representing a magnetic nanowire, all units in each row sharing the same word line, all units in each column share one writing bit line and one reading bit line; an output port of the word line driver is connected with a word line input port of the magnetic track memory array; an output port of the write-in and reset controller is connected with a write bit line input port of the magnetic track memory array; the input port of the SA array is connected with the read bit line output port of the magnetic track memory array; and the storage controller is used for generating a control signal and pulse current. The time-to-digital converter has the functions of time-to-digital signal conversion and nonvolatile storage, can realize high-precision time measurement and reliable storage, and is convenient to construct a large-scale time-to-digital converter array.

An apparatus and a fabricating method therefor of magnetic racetrack in-memory computing AI inference chip utilizing magnetic topological spin orbital torque (SOT) magnetic tunnel junction (MTJ) array unit cells comprises a SOT cell having laminated topological half Heusler alloy (THHA) layer, a MTJ cell having AP-pinned racetrack data storage layer, wherein the SOT and the magnetic racetrack data storage layer are configured to generate memory writing, the tunnel magnetoresistive (TMR) MTJ and the magnetic racetrack data storage layer are configured to provide memory reading, the magnetic racetrack data storage layer is configured to store multipolar bits through domain walls (DWs) which are driven to move together along the magnetic racetrack data storage layer by pulses of coherent spin-polarized electrical current, and together the SOT-MTJ cells having multi-bits data storage capability each cell are configuring a non-volatile memory array to store a corresponding programmable weight matrix for AI in-memory computing.

The present invention relates to a Racetrack (RT) memory device that includes a racetrack layer and at least one reading element, in which the reading element includes a polarity-reversible Josephson supercurrent diode (=JJ). The polarity-reversible Josephson supercurrent diode is capable of detecting magnetic domains and thus magnetic domain walls in the racetrack.

The application discloses a skyrmion racetrack memory based on artificial ferrimagnet, and belongs to the technical field of spin electronics and nanomagnetic devices. The device comprises a heavy metal layer, an artificial ferrimagnet layer and a read-write end; the artificial ferrimagnet layer is composed of a plurality of parallel skyrmion strip racetracks; the skyrmion strip racetrack comprises a lower ferromagnetic film, a non-magnetic intermediate layer and an upper ferromagnetic film; the upper and lower ferromagnetic films are magnetic materials with different saturation magnetization intensities; and the net magnetization intensities of adjacent skyrmion strip racetracks are positive and negative, so that skyrmions in adjacent racetracks are deflected in opposite directions, and the two opposite transverse displacements are offset at the boundary, so that the magnetic skyrmions move along the boundary. The application solves the problem of inaccurate positioning caused by the skyrmion Hall effect, significantly improves the read-write precision, reliability and scalability of the device, and provides strong technical support for the high-performance development and practical application of the skyrmion racetrack memory.

The application relates to a non-destructive reading ferroelectric memistor and a manufacturing method and application thereof. The structure of the ferroelectric memory is "electrode-ferroelectric layer-electrode-insulating dielectric layer-semiconductor". The manufacturing method comprises the following steps: firstly, growing an insulating material dielectric layer on a semiconductor substrate; secondly, manufacturing an intermediate electrode on the "semiconductor-insulating dielectric layer" base; thirdly, growing a ferroelectric material on the "semiconductor-insulating dielectric layer-electrode" to form a ferroelectric film layer; and finally, manufacturing a top electrode on the "semiconductor-insulating dielectric layer-electrode-ferroelectric layer" to form the memistor. The application is applied to: taking the top electrode as an input end, taking the base semiconductor as an output end which is led out by silver paste, changing and saving the capacitance between the two ends under the action of positive and negative pulses, and then realizing non-destructive reading under a small signal triangular wave. The application realizes that the capacitance is used as storage information, meets the requirement of non-volatile storage, has high reading and writing speed, low heat loss and high energy utilization rate.

The invention discloses a multiferroic track memory device based on ferroelectric phase Mn2NO2, the multiferroic track memory device comprises a substrate, a ferroelectric phase Mn2NO2 nanosheet, a write electrode, a read electrode and a signal interpreter, the invention also discloses a method for preparing the memory device, the single-layer ferroelectric phase Mn2NO2 nanosheet is transferred to the substrate, in-plane region division is carried out, and the ferroelectric phase Mn2NO2 nanosheet is obtained; the invention further discloses a use method of the memory device, information is written in through the write-in electrode, and the information is read through the read electrode. The memory device is simple in structure, the core material is only the ferroelectric phase Mn2NO2 nanosheet, and the problems that a small-size multiferroic material cannot be further obtained due to the size effect of an existing multiferroic material, coexistence of ferroelectricity and ferromagnetism of a two-dimensional material is difficult to achieve, and an intrinsic small-size multiferroic electronic device is difficult to prepare are solved.