30 results about "Racetrack memory" patented technology

The invention provides a racetrack memory based on magnetic skyrmions, and belongs to the technical field of magnetic devices. The racetrack memory comprises an antiferromagnetic coupling twin-track magnetic nano belt, and the magnetic nano belt is divided into an information input part, an information storage part and an information reading part sequentially in the track direction. The magnetic skyrmions with the opposite polarity are utilized for presenting binary number zero or one, and the magnetic skyrmions move from the information input part to the information reading part in the trackdirection of the twin-track magnetic nano belt. The magnetic skyrmions are periodically generated in one of the track of the twin-track magnetic nano belt where the information input part is located,whether the polarity of the generated magnetic skyrmions needs to be changed or not is determined according to the input data, and accordingly whether the magnetic skyrmions need to be moved to the other track of the twin-track magnetic nano belt or not is determined. The information storage part is divided into a plurality of storage units in the track direction of the magnetic nano belt, and onemagnetic skyrmion is stored in one storage unit. The information reading part is used for reading the polarity of the magnetic skyrmions passing through.

A shift register is provided, the shift register comprising at least one track including a storage region. The storage region comprises a plurality of magnetic domains for storing data. A given first one of the plurality of magnetic domains is adjacent to a given second one of the plurality of magnetic domains. The given first one of the plurality of magnetic domains and the given second one of the plurality of magnetic domains are arranged in a linear configuration. Further, the given first one of the plurality of magnetic domains and the given second one of the plurality of magnetic domains are separated from one another by at least one layer of non-magnetic material. The at least one layer of non-magnetic material preventing a propagation of a nucleated wall from traveling between the given first one of the plurality of magnetic domains and the given second one of the plurality of magnetic domains. The shift register is configured such that an electric current applied to the track is operative to shift data stored within at least one of the plurality of magnetic domains of the storage region, along the track, in a direction of the electric current. The data stored within the at least one of the plurality of magnetic domains is shifted as a function of the direction of the electric current.

The invention discloses an embedded system on-line program refreshing method. The method includes the steps: placing a starting program, an application program and effective markers into a racetrack memory of an embedded system; firstly executing the starting program after the embedded system resets, reading values of the effective markers by the starting program, judging whether a current application program is effective or not, entering and continuously running the application program if the application program is effective, entering a refreshing state and establishing communication with an external device if not, and downloading refreshing subprograms from the external device; storing the downloaded refreshing subprograms into the racetrack memory, downloading application programs needing to be refreshed from the external device after the subprograms are downloaded, circularly calling and refreshing the subprograms, and flushing data of each downloaded application program needing to be refreshed into a designated address of the racetrack memory. By the method, software of the embedded system can be updated in an online refreshing manner, a software program is improved, and excessive product cost increase is avoided.

Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.

A nonvolatile alternative to DRAM or Flash is disclosed. It involves a new “magnetic shift register” that avoids the bit annihilation problem that plagues magnetic racetrack memories. Using this new “chainlink memory” approach, one avoids the annihilation problem inherent in racetrack memory by breaking up the racetrack into magnetically coupled links, where each link preferably handles one bit exclusively. Depending upon the implementation, the “bit” can be, for example, the magnetization of a link, presence or absence of a domain wall, or the polarity of a domain wall. Numerous examples and applications of this new chainlink technology are disclosed.

Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.

A computing in-memory system and computing in-memory method based on a skyrmion race memory are provided. The system comprises a circuit architecture of SRM-CIM. The circuit architecture of the SRM-CIM comprises a row decoder, a column decoder, a voltage-driven, a storage array, a modified sensor circuit, a counter Bit-counter and a mode controller. The voltage-driven includes two NMOSs, and the two NMOSs are respectively connected with a selector MUX. The modified sensor circuit compares the resistance between a first node to a second node and a third node to a fourth node by using a pre-charge sense amplifier. The storage array is composed of the skyrmion racetrack memories. The computing in-memory architecture is designed by utilizing the skyrmion racetrack memory, so that storage is realized in the memory, and computing operation can be carried out in the memory.

A racetrack memory includes a magnetic nanotube, a first write magnetic tunnel junction, a first read magnetic tunnel junction, and a memory connected to the first write magnetic tunnel junction and the first read magnetic tunnel junction for temporarily storing storage data obtained through the first read magnetic tunnel junction, and the first write-in magnetic tunnel junction is used for writing the second write-in magnetic tunnel junction into the plurality of first storage units again in the form of skyrmion. By introducing the memory, the stored data can be reset, and the storage densityof the magnetic nanotubes is further improved.

The invention relates to a topological magnetic structure, a magnetic skyrmion writing method, a magnetic skyrmion storage, a magnetic skyrmion read-write system and a magnetic skyrmion track storage. The topological magnetic structure comprises a substrate layer; a buffer layer, which is arranged on the substrate layer, wherein the surface roughness of the buffer layer is smaller than that of the substrate layer; a magnetic layer, which is arranged on the buffer layer and comprises at least one ferrimagnetic layer, and is used for generating the magnetic skyrmion under a preset condition; and a protective layer, which is arranged on the magnetic layer and is used for protecting the magnetic layer. The device based on the ferrimagnetic material has the advantages of being insensitive to magnetic field disturbance, high in intrinsic frequency and the like, and therefore the device has wide application prospects in the fields of ultra-high density information storage, terahertz (Tera Hertz, THz) and the like.

The invention relates to a track memory based on magnetic skyrmion. The track memory based on magnetic skyrmion may include a storage track and a read component disposed on the storage track. The memory track is formed of a spin Hall effect layer and a magnetic layer formed on the spin Hall effect layer for storing Skyrmion, and includes a shift write terminal provided at at least one end thereof.The shift write terminal includes a narrow portion, a wide portion, and an expansion portion connecting the narrow portion and the wide portion. The narrow portion has a first width for receiving a shift write current and generating a skyrmion. The wide portion extends to be connected to a main body portion of the storage rail to receive and move the skyrmion and has a second width greater than the first width. The first end, connected with the narrow part, of the expanding part has the first width, the second end, connected with the wide part, of the expanding part has the second width, andthe expanding part gradually expands from the first width of the first end to the second width of the second end.

The invention relates to the technical field of memories, in particular to a magnetic track memory cell which comprises a magnetic nanowire track and a writing device; the magnetic nanowire track is provided with a magnetic domain, the writing device comprises an insulating layer and a metal wire, and the insulating layer separates the metal wire from the magnetic nanowire track; when current passes through the metal wire, a magnetic field generated by the current causes the change of the magnetization direction of a magnetic domain in the magnetic nanowire track, so that data are written in, wherein an electric field is arranged at a magnetic domain interface where data needs to be written; the electric field can cause the change of the characteristics of the magnetic material and reduce the anisotropic performance of the magnetic domain, thereby effectively reducing the write current and write power consumption of the magnetic track memory cell .