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Track memory based on magnetic skyrmion

A magnetic skyrmion and track memory technology, applied in the field of spintronics, can solve different problems

Active Publication Date: 2021-01-29
XINYANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the relatively independent magnetic vortex structure of skyrmions, their generation, driving and reading processes are different from the traditional magnetic domain structure.

Method used

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  • Track memory based on magnetic skyrmion
  • Track memory based on magnetic skyrmion
  • Track memory based on magnetic skyrmion

Examples

Experimental program
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Embodiment Construction

[0022]Hereinafter, exemplary embodiments of the present invention will be described with reference to the drawings. Note that the drawings are not drawn to scale.

[0023]Figure 3A with3BA top view and a side view of the skyrmion-based track memory 200 according to an embodiment of the present invention are respectively shown. As shown in the figure, the race track memory 200 includes a storage track 210 and a first electrode 201 and a second electrode 203 arranged at opposite ends of the storage track 210. The first electrode 201 and the second electrode 203 are arranged on opposite end faces of the storage track 210. And in contact with it, a current is applied to the storage track 210.

[0024]The storage track 210 may have a double-layer structure, that is, it includes a spin Hall effect layer 214 and a magnetic layer 212 on and in contact with the spin Hall effect layer 214. As the name implies, the spin Hall effect layer 214 is formed of a spin Hall effect material, such as commonly...

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Abstract

The invention relates to a track memory based on magnetic skyrmion. The track memory based on magnetic skyrmion may include a storage track and a read component disposed on the storage track. The memory track is formed of a spin Hall effect layer and a magnetic layer formed on the spin Hall effect layer for storing Skyrmion, and includes a shift write terminal provided at at least one end thereof.The shift write terminal includes a narrow portion, a wide portion, and an expansion portion connecting the narrow portion and the wide portion. The narrow portion has a first width for receiving a shift write current and generating a skyrmion. The wide portion extends to be connected to a main body portion of the storage rail to receive and move the skyrmion and has a second width greater than the first width. The first end, connected with the narrow part, of the expanding part has the first width, the second end, connected with the wide part, of the expanding part has the second width, andthe expanding part gradually expands from the first width of the first end to the second width of the second end.

Description

Technical field[0001]The present invention generally relates to the field of spintronics, and more particularly, to a track memory based on magnetic skyrmions.Background technique[0002]Around 2008, the National Business Machines Corporation (IBM) of the United States proposed a magnetic domain-based track storage system, such asfigure 1 Shown. Referencefigure 1 , The track storage system 100 may include a magnetic shift register 10, a writing device 15 and a reading device 20. The shift register 10 includes a magnetic track 11, which may include a plurality of magnetic domains such as magnetic domains 25, 30 to store information. By applying a current 45 to the magnetic track 11, the magnetic domains 25 and 30 can be moved along the magnetic track 11. The shift register 10 may include a data area 35 and a reserved area 40. The reserved area 40 may be set to be sufficiently long, for example, may have approximately the same size as the data area 35, so that all magnetic domains in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C19/08
CPCG11C19/0841G11C19/0816
Inventor 张杰磊
Owner XINYANG NORMAL UNIVERSITY
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