Topological magnetic structure, writing method of magnetic skyrmion and memory

A magnetic skyrmion and magnetic structure technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as low efficiency and high energy consumption

Pending Publication Date: 2021-08-20
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a topological magnetic structure, a method for writing magnetic skyrmions, a memory, a re

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  • Topological magnetic structure, writing method of magnetic skyrmion and memory
  • Topological magnetic structure, writing method of magnetic skyrmion and memory
  • Topological magnetic structure, writing method of magnetic skyrmion and memory

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[0036] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the application are given in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application.

[0038] It will be understood that when an element or layer is referred to as being "on," "adjacent," "con...

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Abstract

The invention relates to a topological magnetic structure, a magnetic skyrmion writing method, a magnetic skyrmion storage, a magnetic skyrmion read-write system and a magnetic skyrmion track storage. The topological magnetic structure comprises a substrate layer; a buffer layer, which is arranged on the substrate layer, wherein the surface roughness of the buffer layer is smaller than that of the substrate layer; a magnetic layer, which is arranged on the buffer layer and comprises at least one ferrimagnetic layer, and is used for generating the magnetic skyrmion under a preset condition; and a protective layer, which is arranged on the magnetic layer and is used for protecting the magnetic layer. The device based on the ferrimagnetic material has the advantages of being insensitive to magnetic field disturbance, high in intrinsic frequency and the like, and therefore the device has wide application prospects in the fields of ultra-high density information storage, terahertz (Tera Hertz, THz) and the like.

Description

technical field [0001] The invention relates to an information storage device of magnetic skyrmions, in particular to a topological magnetic structure, a writing method of magnetic skyrmions and a memory. Background technique [0002] With the rapid development of the information age, the explosive growth of data volume has also put forward higher requirements for information storage media. With the shrinking of the material size of the current traditional magnetic storage media, the development of traditional information storage materials has encountered a bottleneck due to the size limit generated by the quantum effect and the thermal effect caused by it. Spintronic technology introduces a new degree of freedom of electron spin. Spintronic devices have the advantages of low static power consumption, unlimited high-speed reading and writing, and non-volatile storage. They are considered to be the key technology to break through the current bottleneck. , It is expected to g...

Claims

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Application Information

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IPC IPC(8): G11C19/08
CPCG11C19/0816G11C19/0841
Inventor 侯志鹏卫智健王亚栋
Owner SOUTH CHINA NORMAL UNIVERSITY
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