A magnetic domain wall writing unit and method based on multiferroic heterostructure

Abstract

The invention discloses a magnetic domain wall writing unit and method based on a multiferroic heterogeneous structure, comprising: a bottom electrode layer connected to a pulse voltage source; a piezoelectric layer made of ferroelectric material and arranged on the bottom electrode layer ; The top electrode layer is arranged on the piezoelectric layer, including a number of top electrodes connected to the pulse voltage source; the magnetic layer is on the same layer as the top electrode, made of ferromagnetic material, and connected to the track memory; wherein the iron of the magnetic layer Magnetic materials have magnetic anisotropy and have magnetostrictive properties. Apply pulse voltage to the top electrode and bottom electrode layer to generate strain in the piezoelectric layer, the strain is transmitted to the magnetic layer and induces magnetic domain walls, and the magnetic domain walls are driven to the track memory; adjust the pulse voltage to change the strain of the piezoelectric layer level, and then write different data. The invention utilizes the inverse piezoelectric effect and the inverse effect of magnetostriction to realize high storage density and low power consumption magnetic domain wall writing.

Description

technical field [0001] The invention relates to the technical field of spintronics, and in particular, to a magnetic domain wall writing unit and method based on a multiferroic heterostructure. Background technique [0002] As a new type of non-volatile spin information storage device, racetrack memory has high application potential for building a future three-dimensional storage framework. The track memory stores multi-bit information on the magnetic nanostrip in the form of magnetic domains, and the multi-bit information is distinguished by the magnetic domain wall, so as to achieve the purpose of high-density storage, and at the same time, it can also realize fast information reading and writing. Under the nanostripe of the racetrack memory, there is an electrode perpendicular to it as a data write line. When a pulsed current is injected into the electrode, the Oersted field generated by the current can change the magnetization direction of the adjacent nanostripe, so th...

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Problems solved by technology

[0004] Aiming at the problems of large volume of memory cells, low storage density and high Joule heat when magnetic domain walls are written into track memory in the prior art, the present invention provides a magnetic domain wall writing method based on a multiferroic heterostructure The unit and method utilize the inverse piezoelectric effect and the inverse effect of magnetostriction, by applying a voltage to the piezoelectric layer on the top electrode and the bottom electrode layer, an electric field is generated in the piezoelectric layer so that the piezoelectric layer is strained and transmitted to the magnetic layer, and then affect the magnetic anisotropy of the magnetic material, so that the magnetization direction of the magnetic material in the electrode layer area changes, thereby inducing the magnetic domain wall, which has the characteristics of small volume, high storage density and less heat generation

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