Racing track memory, reading and writing method thereof and racing track memory device

A technology of track memory and reading and writing methods, which is applied in the field of memory, can solve the problems of magnetic nanotube storage density reduction, storage data disappearance, and inability to reset, so as to achieve the effect of increasing storage density

Active Publication Date: 2020-11-17
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the current track memory, since the magnetic nanotubes in it need to reserve memory cells without written skyrmions at one end across the read magnetic tunnel junction, the read magnetic tunnel junction has difficulty in completing re

Method used

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  • Racing track memory, reading and writing method thereof and racing track memory device
  • Racing track memory, reading and writing method thereof and racing track memory device
  • Racing track memory, reading and writing method thereof and racing track memory device

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Embodiment Construction

[0048] In order to make the object, technical solution and effect of the present invention more clear and definite, the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present invention, and the word "embodiment" used in the description of the present invention is meant to be used as an example, illustration or illustration, and is not intended to limit the present invention.

[0049] Please refer to figure 1 , which is a schematic diagram of the track memory provided according to the first embodiment of the present invention.

[0050] In this embodiment, the track memory includes a magnetic nanotube 10 , a first write magnetic tunnel junction 11 , a first read magnetic tunnel junction 12 , and a memory 13 .

[0051] Further, the magnetic nanotubes 10 extend in sequence along the first direction into a first wr...

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Abstract

A racetrack memory includes a magnetic nanotube, a first write magnetic tunnel junction, a first read magnetic tunnel junction, and a memory connected to the first write magnetic tunnel junction and the first read magnetic tunnel junction for temporarily storing storage data obtained through the first read magnetic tunnel junction, and the first write-in magnetic tunnel junction is used for writing the second write-in magnetic tunnel junction into the plurality of first storage units again in the form of skyrmion. By introducing the memory, the stored data can be reset, and the storage densityof the magnetic nanotubes is further improved.

Description

technical field [0001] The invention relates to the field of memory, in particular to a race track memory, a reading and writing method thereof, and a race track storage device. Background technique [0002] Magnetic random access memory (MRAM) is a new type of non-volatile random access memory based on the tunnel magnetoresistance (TMR) of the magnetic tunnel junction. The number of times, and power consumption have appropriate performance, so it is considered by the industry as a potential memory for building the next generation of non-volatile cache and main memory. [0003] In the current track memory, since the magnetic nanotubes in it need to reserve memory cells that have not written skyrmions at one end across the read magnetic tunnel junction, the read magnetic tunnel junction has to be read and written. The skyrmion in the skyrmion storage unit can continue to push the read skyrmion forward, avoiding the problem that the stored data disappears and cannot be reset,...

Claims

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Application Information

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IPC IPC(8): G11C11/16
CPCG11C11/1673G11C11/1675
Inventor 叶智爽
Owner YANGTZE MEMORY TECH CO LTD
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