Domain wall shift control method and circuit based on sub-threshold current

Abstract

The invention discloses a domain wall shift control method and circuit based on sub-threshold current. According to the method, current less than a threshold is called as sub-threshold current; and a domain wall is pushed to shift outside an anchoring region through the sub-threshold current to supplement a shift position of the domain wall. The method comprises a single-step shift mode and a multi-step shift mode, and sequentially comprises the steps: setting an anchoring site, and preparing shift length and needed voltage; driving the domain wall by high-threshold current for a period of time; driving the domain wall by the sub-threshold current for a period of time; and judging whether the total sum of a shift distance reaches a distance needing to be shifted of the domain wall or not until the domain wall stops on the anchoring site. According to the domain wall shift control method and circuit based on the sub-threshold current, the accuracy of a racetrack on memory of the shift of the domain wall is improved, and the shift of the domain wall can be relatively rapidly finished; and the problem which is caused possibly by the random shift of the domain wall is prevented so that the reliability and the stability of the racetrack memory are improved.

Description

technical field [0001] The invention belongs to the field of circuit design, and relates to a microsystem structure and a circuit control method, in particular to a subthreshold current-based magnetic domain wall movement control method and a subthreshold current movement circuit. Background technique [0002] Racetrack Memory (RM), also known as domain wall memory, is a new type of non-volatile memory based on spin memory technology. Due to its ultra-high storage density and access speed, track storage is gradually becoming a research hotspot in the academic and industry circles. Track storage encodes the magnetic direction into the data that needs to be stored, and stores it in multiple magnetic domains in long strips of magnetic material. Magnetic domains can reach very small sizes, thus providing high storage densities. [0003] In order to support high-density storage, track storage introduces a new operation: shift. The structural characteristics of track storage de...

AI Technical Summary

Problems solved by technology

[0004] Experiments have shown that the movement of magnetic domain walls is controlled by the driving current. Larger currents can provide faster movement speeds and pass through the anchoring region. When the current is less than a threshold, the magnetic domain walls cannot pass through the anchoring region, resulting in a magnetic domain Walls cannot move outside of the anchor area, resulting in stop mid-position errors

At present, there is no existing technology in this field that can effectively solve the problem of magnetic domain wall stop center position error

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