Magnetic track memory cell

A storage unit and circuit technology, applied in the field of memory, can solve the problems of increased power consumption, high energy consumption, etc., and achieve the effect of reducing write current and write power consumption, and reducing anisotropy

Pending Publication Date: 2022-01-11
普赛微科技(杭州)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, a higher flipping energy barrier also means that higher en...

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0048] Such as figure 1As shown, the magnetic track memory unit 10 is composed of a magnetic nanowire track 100 , a write device 200 , and a read device 300 . The magnetic nanowire race track 100 presents a "U" shape. The magnetization direction of the magnetic nanowire track 100 can be perpendicular to the surface of the film, or parallel to the surface of the film, or form any angle with the surface of the film. The read device 300 may form a magnetic tunnel junction (MTJ) structure with the magnetic nanowire raceway 100 . The magnetic domains in the magnetic nanowire track 100 form a magnetic electrode for "reading MTJ", and the reading device 300 includes a tunneling barrier layer and a second magnetic electrode for reading MTJ. When the magnetization direction of the magnetic domains in the magnetic nanowire track 100 changes, the resistance value of the read MTJ changes, and the stored information can be read through the change of the resistance value. The reading dev...

Embodiment 2

[0051] Such as figure 2 As shown, the magnetic track memory unit 11 is composed of a magnetic nanowire track 110 , a write device 210 , and a read device 310 . The magnetic nanowire race track 110 presents a "U" shape. The magnetization direction of the magnetic nanowire track 110 can be perpendicular to the surface of the film, or parallel to the surface of the film, or form any angle with the surface of the film. The magnetic nanowire track 110 includes multiple layers of materials such as a seed layer 13000 , a magnetic layer 12000 and a cover layer 11000 . The magnetic layer 12000 may include multiple layers of magnetic and non-magnetic thin films. The magnetic thin films can be separated by different non-magnetic thin films, and there is mutual exchange coupling effect. A common type of mutual exchange coupling exists in artificial antiferromagnetic (SAF) structures. In this structure, adjacent magnetic films are exchange-coupled through non-magnetic films (such as R...

Embodiment 3

[0053] Such as image 3 As shown, the magnetic track memory unit 12 is composed of a magnetic nanowire track 120 , a write device 220 , and a read device 320 . The magnetic nanowire track 120 is in the shape of multiple "U"s connected together. The magnetization direction of the magnetic nanowire track 120 can be perpendicular to the surface of the film, or parallel to the surface of the film, or form any angle with the surface of the film. The read device 320 can form a read MTJ structure with the magnetic nanowire raceway 120 . The magnetic domains in the magnetic nanowire track 120 form a magnetic electrode for reading the MTJ, and the reading device 320 includes a tunneling barrier layer and a second magnetic electrode for reading the MTJ. When the magnetization direction of the magnetic domains in the magnetic nanowire track 120 changes, the resistance value of the read MTJ changes, and the stored information can be read through the change of the resistance value. The ...

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PUM

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Abstract

The invention relates to the technical field of memories, in particular to a magnetic track memory cell which comprises a magnetic nanowire track and a writing device; the magnetic nanowire track is provided with a magnetic domain, the writing device comprises an insulating layer and a metal wire, and the insulating layer separates the metal wire from the magnetic nanowire track; when current passes through the metal wire, a magnetic field generated by the current causes the change of the magnetization direction of a magnetic domain in the magnetic nanowire track, so that data are written in, wherein an electric field is arranged at a magnetic domain interface where data needs to be written; the electric field can cause the change of the characteristics of the magnetic material and reduce the anisotropic performance of the magnetic domain, thereby effectively reducing the write current and write power consumption of the magnetic track memory cell .

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a magnetic circuit storage unit. Background technique [0002] Magnetic racetrack memory (Racetrack Memory) is a non-volatile memory consisting of magnetic nanowire racetracks connected by circuits and corresponding read and write devices. The magnetic nanowire track can contain multiple different magnetic domains, and adjacent magnetic domains are separated by magnetic domain walls. The arrangement of the magnetic domains (walls) represents the information stored within the magnetic nanowire racetracks. The new magnetic domain state can be written into the magnetic nanowire track by the write device, and the arrangement of the magnetic domains can be read by the read device, thereby extracting the stored information. [0003] The magnetic domains in the magnetic nanowire racetrack can move under the action of an applied electric current. When changing the direction of the appl...

Claims

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Application Information

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IPC IPC(8): G11C11/15G11C11/16
CPCG11C11/15G11C11/1675G11C11/1673
Inventor 蒋信刘瑞盛喻涛
Owner 普赛微科技(杭州)有限公司
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