Magnetic track memory cell
A storage unit and circuit technology, applied in the field of memory, can solve the problems of increased power consumption, high energy consumption, etc., and achieve the effect of reducing write current and write power consumption, and reducing anisotropy
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0048] Such as figure 1As shown, the magnetic track memory unit 10 is composed of a magnetic nanowire track 100 , a write device 200 , and a read device 300 . The magnetic nanowire race track 100 presents a "U" shape. The magnetization direction of the magnetic nanowire track 100 can be perpendicular to the surface of the film, or parallel to the surface of the film, or form any angle with the surface of the film. The read device 300 may form a magnetic tunnel junction (MTJ) structure with the magnetic nanowire raceway 100 . The magnetic domains in the magnetic nanowire track 100 form a magnetic electrode for "reading MTJ", and the reading device 300 includes a tunneling barrier layer and a second magnetic electrode for reading MTJ. When the magnetization direction of the magnetic domains in the magnetic nanowire track 100 changes, the resistance value of the read MTJ changes, and the stored information can be read through the change of the resistance value. The reading dev...
Embodiment 2
[0051] Such as figure 2 As shown, the magnetic track memory unit 11 is composed of a magnetic nanowire track 110 , a write device 210 , and a read device 310 . The magnetic nanowire race track 110 presents a "U" shape. The magnetization direction of the magnetic nanowire track 110 can be perpendicular to the surface of the film, or parallel to the surface of the film, or form any angle with the surface of the film. The magnetic nanowire track 110 includes multiple layers of materials such as a seed layer 13000 , a magnetic layer 12000 and a cover layer 11000 . The magnetic layer 12000 may include multiple layers of magnetic and non-magnetic thin films. The magnetic thin films can be separated by different non-magnetic thin films, and there is mutual exchange coupling effect. A common type of mutual exchange coupling exists in artificial antiferromagnetic (SAF) structures. In this structure, adjacent magnetic films are exchange-coupled through non-magnetic films (such as R...
Embodiment 3
[0053] Such as image 3 As shown, the magnetic track memory unit 12 is composed of a magnetic nanowire track 120 , a write device 220 , and a read device 320 . The magnetic nanowire track 120 is in the shape of multiple "U"s connected together. The magnetization direction of the magnetic nanowire track 120 can be perpendicular to the surface of the film, or parallel to the surface of the film, or form any angle with the surface of the film. The read device 320 can form a read MTJ structure with the magnetic nanowire raceway 120 . The magnetic domains in the magnetic nanowire track 120 form a magnetic electrode for reading the MTJ, and the reading device 320 includes a tunneling barrier layer and a second magnetic electrode for reading the MTJ. When the magnetization direction of the magnetic domains in the magnetic nanowire track 120 changes, the resistance value of the read MTJ changes, and the stored information can be read through the change of the resistance value. The ...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com