33 results about "Magnetic nanowire" patented technology

A serial magnetic mass storage device and associated data storage method is provided based on magnetic nanowires that support single magnetic domains separated by domain walls. Each data-storing nanowire has a plurality of crossing nanowires along its length, forming cross junctions that constitute domain wall pinning sites. Data is fed through each data-storing nanowire by moving the magnetic domains under the action of a field that alternates between alignment and anti-alignment with the crossing nanowires. The data is encoded in the chirality of the domain walls, with up and down chirality transverse domain walls being used to encode 0's and 1's. Data is clocked into each nanowire with suitable nucleation generators capable of nucleating domains with domain walls of pre-defined chirality. Data is clocked out of each nanowire with suitable magnetic field sensors that sense the chirality.

This invention provides an optically transparent electrically conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of compound magnetic nanowires in a plane, the compound nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the compound nanowires in the plane of the layer, the compound nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of compound magnetic nanowires allows for substantial optical transparency of the conductive layer. A compound magnetic nanowire may comprise a silver nanowire covered by a layer of magnetic metal such as nickel or cobalt. Furthermore, a compound magnetic nanowire may comprise a carbon nanotubes (CNT) attached to a magnetic metal nanowire. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of compound magnetic conductive nanowires on the substrate and applying a magnetic field to form the compound nanowires into a plurality of conductive pathways parallel to the surface of the substrate.

The invention discloses a technical scheme of a preparation method of a Sm-Co alloy amorphous magnetic nanowire array, relates to amorphous alloy of which the main component is cobalt. The preparation method comprises the following steps: performing nanowire deposition in electrolytic deposition liquid which is prepared by using 100mL of de-ionized water and has a molar concentration ratio of SmCl3.6H2O to CoCl2.6H2O to H3BO3 to glycine to ascorbic acid being (0.5-1.8) to (2-5) to (5-10) to (4-8) to (3-7) in an electrolytic deposition tank of a special Sm-Co alloy amorphous magnetic nanowire deposition device, and annealing the deposited Sm-Co alloy amorphous magnetic nanowire array to prepare a Sm-Co alloy amorphous magnetic nanowire array product. According to the method, the defect of low deposition rate of Sm-Co alloy nanowires, namely the Sm-Co alloy amorphous magnetic nanowire array in the prior art is overcome.

A magnetic random number generator is disclosed. The magnetic random number generator comprises: a) a Hall cross structure comprising at least one magnetic nanowire with perpendicular magnetic anisotropy; b) an in-plane pulsed current generator operable to generate stochastic nucleation of domain walls (DWs) in the Hall cross structure; and c) a sensor configured to measure a parameter of the Hall cross structure upon DW nucleation, wherein said parameter has a value representing a random number. A greater number of Hall cross structures may be employed to generate a random number having a greater number of bits.

A method of operating an information storage device using a magnetic domain wall movement in a magnetic nanowire is provided. The magnetic nanowire includes a plurality of magnetic domains and pinning sites formed in regions between the magnetic domains. The method includes depinning the magnetic domain wall from a first pinning site by applying a first pulse current having a first pulse current density to the magnetic nanowire and moving the magnetic domain wall to a second pinning site by applying a second pulse current having a second pulse current density to the magnetic nanowire. The first pulse current density is greater than the second pulse current density.

The invention relates to a production method of a graphene foam/magnetic nanowire composite wave-absorbing material. The production method of the graphene foam/magnetic nanowire composite wave-absorbing material comprises the following steps of producing a graphene oxide aqueous solution, conducting high-speed centrifugation for multiple times by using ethyl alcohol as a solvent to make sure that water is completed replaced, so as to obtain a graphene oxide solution with the low-concentration ethyl alcohol used as the solvent, carrying out a one-step hydrothermal reaction to produce three-dimensional porous graphene oxide foam, and then carrying out a secondary hydrothermal reaction to synthesize one-dimensional magnetic nanowires in a porous structure formed by two-dimensional graphene sheet layers, so as to form a rich structure which integrates multidimensional scaling. Electrical loss and magnetic loss of the graphene foam/magnetic nanowire composite wave-absorbing material are given play to, and an electromagnetic coupling effect, an interfacial effect, a nanometer effect and a quantum effect are used at the same time, so that excellent wave absorbing performance is obtained, wide-frequency high-strength absorption of electromagnetic waves is achieved, and the problems of electromagnetic interference, electromagnetic radiation and the like can be effectively solved.

The invention discloses a magnetic atomic force microscope probe adopting magnetic nanowires and a manufacturing method thereof, so as to solve the bottleneck problem of the current magnetic atomic force microscope probe and greatly improve the service life and the resolution of the atomic force microscope probe. The magnetic nanowire probe can be manufactured by adopting a direct bonding method and a chemical vapor deposition growth method. The ultra-high resolution and the ultra long service life of the magnetic one-dimensional nano material probe are made full use of to solve the problems of short service life, easy wear and the like for a long time of the magnetic atomic force microscope probe test, the test consistency is improved, and needs of different application fields such as scientific research, production and teaching can be met.

A magnetoresistance effect element includes a recording layer containing a ferromagnetic body, and including a first fixed and second magnetization regions having magnetization components fixed substantially in a direction antiparallel to the in-plane direction to each other, and a free magnetization region disposed between the first and second fixed magnetization regions and having a magnetization component invertible in the in-plane direction, a domain wall disposed between the first fixed magnetization region and the free magnetization region, and being movable within the free magnetization region, and a magnetic nanowire having a width of 40 nm or less. The thickness of the recording layer is 40 nm or less and at least half but no more than twofold the width of the magnetic nanowire. The element further includes a barrier layer disposed on the recording layer, and a reference layer disposed on the barrier layer and containing a ferromagnetic body.

The invention discloses a preparation method of a Tb-Dy-Fe-Co alloy magnetic nano pipe array and relates to a uniform polycrystalline material of a certain structure. According to the method for preparing the Tb-Dy-Fe-Co alloy magnetic nano pipe array by means of an electrochemical deposition method in a water solution, the rare earth-transition metal nano pipe array is prepared by regulating theconcentrations of Tb and Dy ions. The method comprises the steps that an AAO template is subjected to metal spraying treatment; a Tb-Dy-Fe-Co alloy electrolytic deposition solution is prepared; and inan electrolytic deposition tank, electrification is performed, the direct-current voltage is 2V-3V, the deposition current is 10mA-20mA, meanwhile, a magnetic stirrer is used for stirring the solution, electrification is performed for 1h-3h, and then the good magneto-optic material Tb-Dy-Fe-Co alloy magnetic nano pipe array is prepared. The defect that a magnetic nanowire array prepared in the prior art is not applicable to being used as a magneto-optic storage material is overcome.

A preparation method for a magnetic nanowire is disclosed. The preparation method includes the following steps: step 1. preparing a metal ion solution, an alkali solution and a water-soluble reducingagent solution; step 2. mixing the metal ion solution, the alkali solution and the water-soluble reducing agent solution, charging a reaction kettle, and reacting in a magnetic field heat treatment furnace; and step 3. obtaining the magnetic nanowire by washing and drying. The preparation method solves the problems that preparation methods of existing Fe3O4 nanowires and spinel type ferrite nanowires are complicated in operation, are high in cost and are low in nanowire yield. The preparation method is simple in operation, does not pollute environment, and is low in cost, and the yield of theprepared magnetic nanowire is 95.6-99.9%. The preparation method is applied in the field of magnetic materials.

The invention provides a magnetic nanowire device, a manufacturing method thereof and a magnetic nanowire construction method. The magnetic nanowire device comprises a substrate, a first electrode layer, an insulating layer, an atomic barrier layer and a second electrode layer sequentially arranged in a stacked mode, wherein one of the first electrode layer and the second electrode layer serves as a ferromagnetic electrode layer, and the other is a non-magentic electrode layer. The magnetic nanowire device also comprises the atomic barrier layer arranged between the ferromagnetic electrode layer and the insulating layer; and the atomic barrier layer comprises a nano through hole. The magnetic nanowire device can effectively and accurately control the width and the position of a magnetic nanowire, and confinement and stabilization of the nanowire can be realized. The magnetic nanowire device realizes magnetoelectric coupling effects, and a carrier is provided for studying a new multilevel memory device.

A serial magnetic mass storage device and associated data storage method is provided based on magnetic nanowires that support single magnetic domains separated by domain walls. Each data-storing nanowire has a plurality of crossing nanowires along its length, forming cross junctions that constitute domain wall pinning sites. Data is fed through each data-storing nanowire by moving the magnetic domains under the action of a field that alternates between alignment and anti-alignment with the crossing nanowires. The data is encoded in the chirality of the domain walls, with up and down chiralitytransverse domain walls being used to encode 0's and 1's. Data is clocked into each nanowire with suitable nucleation generators capable of nucleating domains with domain walls of pre-defined chirality. Data is clocked out of each nanowire with suitable magnetic field sensors that sense the chirality.

The invention relates to a substrate with magnetic nanowires being arranged on the surface and a preparation method of the substrate. The surface of the substrate is provided with the orderly-arranged magnetic nanowires. The preparation method of the substrate comprises the steps of dispersing the magnetic nanowires into a dispersing solution, and then, using a magnetic field to enable the magnetic nanowires to be orderly-arranged and deposited on the surface of the substrate. By utilizing the magnetic properties of the magnetic nanowire material itself and under the action of a magnetic field, directional arrangement can be realized, and large-area, multiple-angle, multiple-mode, multiple-layer controllable nano material arrangement can be realized; the operation is simple; and the large-area preparation and arrangement of the materials help to promote the development of large-scale and integrated production of semiconductor devices.

The invention discloses a preparation method of a Nd-Fe-B magnetic nanowire array. The preparation method comprises the following steps: neodymium chloride (NdCl3.6H2O), ferrous chloride (FeCl2.4H2O),boric acid (H3BO3) and de-ionized water are mixed to prepare NdFeB alloy solution; a complexing agent is added to obtain depositing liquid, wherein the complexing agent is glycine (NH2CH2COOH), ammonium chloride (NH4Cl) and ascorbic acid (C6H8O6); and graphite is used as an anode, an AAO template is used as a cathode, the Nd-Fe-B depositing liquid prepared in the last step is electrolyte, and a direct-current voltage-stabilization power supply is used for electrochemical deposition to finally obtain Nd-Fe-B ternary alloy magnetic nanowires. The obtained nanowires are high in number and deposition rate, arranged in parallel, ordered in height, uniform in diameter and higher in length-diameter ratio.

The invention provides a magnetic hole substrate for preparing a flaky electromagnetic noise suppression material and a preparation method thereof. The magnetic hole substrate comprises an iron substrate and a porous layer on the iron substrate, wherein the porous layer is to coat ferroferric oxide by carbon having nanoscale holes; the aperture is 50-150 nm; and iron magnetic nanowires are deposited in the holes through an electroplating process as the flaky electromagnetic noise suppression material. The preparation method comprises the following steps: firstly, the anodic oxidation treatment is performed for a clean iron chip; then, the iron chip is dipped in gluconic ethanol solution by 8-12 h for drying; and finally, the iron chip is annealed by 2-4 h at a temperature of 400-600 DEG C in an argon atmosphere. A magnetic material is adopted as a hole substrate material to enhance an iron magnetic coupling effect among the magnetic nanowires deposited in the holes; the magnetic hole substrate is excellent in noise absorption performance; the absorption frequency can reach above 10 GHz; the miniaturization and the integration are easy to be realized; and the demands to electromagnetic noise suppression in high-frequency and wide-frequency band ranges can be satisfied.