racetrack memory device

Abstract

A racetrack-type memory storage device that moves domain walls along the racetrack in only one direction. The reading unit can be placed at one end of the runway (rather than in the middle of the runway). Once the domain walls are moved across the read member, the domain walls disappear, but their corresponding information is read into one or more memory devices (eg, built-in CMOS circuits). The information can then be processed in circuitry for computational needs and written to either in its original form (eg, read from the racetrack) using a writing component placed on the opposite end of the racetrack from the reading component. out) or written back to the runway in a different form after some calculation. Such racetracks are simpler to construct and have higher operational reliability than previous racetrack-type memory devices.

Description

technical field [0001] The present invention relates to memory storage systems and, in particular, to a method of using electric currents to move magnetic domain walls across read and write devices, thereby allowing data to be stored in and from domains within magnetic raceways Or domain wall readout memory storage system for data. Background technique [0002] Racetrack memory devices store information in the form of magnetic domain walls in magnetic nanowires, or "racetracks." The domain walls are moved backwards and forwards along the nanowire using short (nanosecond) pulses of current, in which the electrons carrying the current are spin-polarized. The spin-polarized current carries spin angular momentum, which is transferred to the domain wall, causing the domain wall to move in the direction of electron flow. For example, a series of domain walls (representing 0s and 1s) can be reciprocated along the racetrack with a read device and a write device placed in the middl...

AI Technical Summary

Problems solved by technology

[0003] Therefore, prior art racetrack memory technologies favor long runway

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