Data programming method, memory control circuit unit and memory storage device

Abstract

The invention provides a data programming method, a memory control circuit unit and a memory storage device. The method comprises the steps of setting a first class entity erasing unit as a current writing-in region and recording the current writing-in data size. The method further comprises the step of calculating a data size threshold value according to the first class entity erasing unit. The method further comprises the step of receiving data. The method further comprises the steps of adopting a first programming mode for programming the data to at least one first class entity erasing unit if the current writing-in data size is smaller than the data size threshold value; setting a second class entity erasing unit as a current writing-in region if the current writing-in data size is not smaller than the data size threshold value, and adopting a second programming mode for programming the data into at least one second class entity erasing unit. The problem that a rewritable type racetrack memory module cannot be used due to the fact that the erasing frequency of some entity erasing units is excessively large can be avoided.

Description

technical field [0001] The invention relates to a data programming method, in particular to a data programming method of a rewritable non-volatile memory module, a memory control circuit unit and a memory storage device. Background technique [0002] Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Since the rewritable non-volatile memory module (such as flash memory) has the characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable for being built in various portable devices such as the above examples. in the multimedia device. [0003] To increase usable capacity, a cell in some types of rewritable non-volatile memory modules can be used to store multiple bits. Moreover, in order to increase the data storage speed of this type of rewritable non-volatile memory module, some types of rewritable non-volatile memory mod...

AI Technical Summary

Problems solved by technology

[0004] However, due to the priority of programming data to the physical erasing units of the storage area with a faster storage speed, the erasure times of the physical erasing units in the storage area with a faster storage speed are often far greater than those with a faster storage speed. Erase count of physical erase units in slow storage

In this way, the erasing times of the physical erasing units in the storage area with a faster storage speed will reach the upper limit of erasing times first, so that the rewritable non-volatile memory module cannot continue to be used

Therefore, although the erasing times of the physical erasing unit in the storage area with a slower storage speed has not reached the upper limit of erasing times, it cannot be used anymore, which shortens the overall service life of the rewritable non-volatile memory module.

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