Data programming method, memory control circuit unit and memory storage device
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- PHISON ELECTRONICS
- Publication Date
- 2020-05-12
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Abstract
Description
technical field
[0001] The invention relates to a data programming method, in particular to a data programming method of a rewritable non-volatile memory module, a memory control circuit unit and a memory storage device. Background technique
[0002] Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Since the rewritable non-volatile memory module (such as flash memory) has the characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable for being built in various portable devices such as the above examples. in the multimedia device.
[0003] To increase usable capacity, a cell in some types of rewritable non-volatile memory modules can be used to store multiple bits. Moreover, in order to increase the data storage speed of this type of rewritable non-volatile memory module, some types of rewritable non-volatile memory mod...