racetrack memory device

Abstract

A racetrack memory storage device moves domain walls along the racetrack in one direction only. The reading element can be positioned at one end of the racetrack (rather than in the middle of the racetrack). The domain walls are annihilated upon moving them across the reading element but their corresponding information is read into one or more memory devices (e.g., built-in CMOS circuits). The information can then be processed in circuits for computational needs and written back into the racetrack either in its original form (as it was read out of the racetrack) or in a different form after some computation, using a writing element positioned at the end of the racetrack opposite to the reading element. Such a racetrack can be built more simply and has greater reliability of operation than previous racetrack memory devices.

Description

technical field [0001] The present invention relates to memory storage systems and, in particular, to a method of using electric currents to move magnetic domain walls across read and write devices, thereby allowing data to be stored in and from domains within magnetic raceways Or domain wall readout memory storage system for data. Background technique [0002] Racetrack memory devices store information in the form of magnetic domain walls in magnetic nanowires, or "racetracks." The domain walls are moved backwards and forwards along the nanowire using short (nanosecond) pulses of current, in which the electrons carrying the current are spin-polarized. The spin-polarized current carries spin angular momentum, which is transferred to the domain wall, causing the domain wall to move in the direction of electron flow. For example, a series of domain walls (representing 0s and 1s) can be reciprocated along the racetrack with a read device and a write device placed in the middl...

AI Technical Summary

Problems solved by technology

[0003] Therefore, prior art racetrack memory technologies favor long runway

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