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Phase transition thin film material, preparation method thereof and phase transition memory unit

A technology of phase-change memory and thin-film materials, which is applied in the direction of electrical components, etc., can solve the problems of slow phase change speed, poor thermal stability and data retention ability, and achieve the effects of fast crystallization speed, low power consumption, and high crystallization temperature

Active Publication Date: 2017-05-24
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a phase-change thin film material and a phase-change memory cell, which are used to solve the poor thermal stability and data retention performance of the phase-change memory material in the prior art. and the problem of slow phase transition

Method used

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  • Phase transition thin film material, preparation method thereof and phase transition memory unit
  • Phase transition thin film material, preparation method thereof and phase transition memory unit
  • Phase transition thin film material, preparation method thereof and phase transition memory unit

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Embodiment 1

[0045] The invention provides a phase change thin film material, the general formula of the phase change thin film material is Ni x Ti y Sb z Te 100-x-y-z , where 0<x≤40, 15≤y≤85, 15≤z≤85, 30≤x+y+z<100.

[0046] As an example, the phase change thin film material can realize a reversible phase change under the action of an electric pulse.

[0047] As an example, the phase-change thin film material has at least two stable resistance states under the action of electric pulses.

[0048] As an example, the phase change thin film material includes an amorphous state and a crystalline state, and the ratio of the resistivity of the amorphous state to the resistivity of the crystalline state of the phase change thin film material is greater than or equal to 5.

[0049] see figure 1 , the present invention also provides a kind of preparation method of phase-change film material as described above, and described preparation method comprises the following steps:

[0050] S1: Introdu...

Embodiment 2

[0078] The present invention also provides a phase-change memory unit, which includes the phase-change thin film material as described in the first embodiment. The phase-change memory unit can be various cell structures of the existing phase-change memory, please refer to image 3 , In one embodiment, the phase change memory unit includes: an insulating dielectric layer 15, a lower electrode 11, a phase change thin film material 12 as described in Embodiment 1, a transition layer 13 and an upper electrode 14; the lower electrode 11 is located in the insulating dielectric layer 15 and runs through the insulating dielectric layer 15; the phase change film material 12 is located on the upper surface of the insulating dielectric layer 15 and is located directly above the lower electrode 11; the The transition layer 13 is located on the upper surface of the phase change film material 12 ; the upper electrode 14 is located on the upper surface of the transition layer 13 .

[0079] ...

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Abstract

The invention provides a phase transition thin film material, a preparation method thereof and a phase transition memory unit. A general formula of the phase transition thin film material is Ni<x>Ti<y>Sb<z>Te<100-x-y-z>, wherein x is greater than 0 and lower than or equivalent to 40, y is greater than or equivalent to 15 and lower than or equivalent to 85, z is greater than or equivalent to 15 and lower than or equivalent to 85, and x+y+z is greater than or equivalent to 30 and lower than or equivalent to 100. The phase transition thin film material can realize reversible phase transition via external electric pulses, the resistance state is changed obviously before and after phase transmistion, a difference between the resistances is high, the state 0 or 1 can be read convenient and easily by an external circuit, and the phase transition thin film material can be an ideal phase transition storage material; and compared with common Ge2Sb2Te5, the phase transition thin film material has a higher crystallization temperature, a higher crystallization speed, a lower operation voltage and a more stable chemical preparation technology.

Description

technical field [0001] The invention relates to a phase-change thin film material in the field of microelectronic technology and a preparation method thereof, in particular to a phase-change thin film material, a phase-change memory unit and a preparation method thereof. Background technique [0002] Phase change memory (Phase Change Memory, PCM) is a non-volatile semiconductor memory emerging in recent years. Compared with a variety of existing semiconductor storage technologies, it has the advantages of shrinkable device size (nanoscale), high-speed reading, low power consumption, high density, and simple manufacturing process. Widely optimistic about a strong competitor, it is expected to replace flash memory (Flash technology) to become the mainstream storage technology of the next generation of non-volatile memory, so it has a broad market prospect. [0003] The basic principle of phase change memory is: apply electrical pulse signal to the device unit, make the phase ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/8828H10N70/021
Inventor 李乐宋三年宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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