47 results about "Damping constant" patented technology

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, spacer, free, and spin barrier layers. The spacer layer is nonmagnetic and resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer resides between the spacer layer and the spin barrier layer. The spin barrier layer is configured to reduce an outer surface contribution to a damping constant of the free layer. In one aspect, the spin barrier layer has a high areal resistance and may substantially eliminate spin pumping induced damping. In another aspect, the magnetic element also includes a spin accumulation layer between the spin barrier and free layers. The spin accumulation layer has a high conductivity, preferably being metallic, and may have a long spin diffusion length.

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, spacer, free, and spin barrier layers. The spacer layer is nonmagnetic and resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer resides between the spacer layer and the spin barrier layer. The spin barrier layer is configured to reduce an outer surface contribution to a damping constant of the free layer. In one aspect, the spin barrier layer has a high areal resistance and may substantially eliminate spin pumping induced damping. In another aspect, the magnetic element also includes a spin accumulation layer between the spin barrier and free layers. The spin accumulation layer has a high conductivity, preferably being metallic, and may have a long spin diffusion length.

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes first pinned, spacer, free, spin barrier, and second pinned layers. The spacer layer is nonmagnetic and resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer resides between the spacer and spin barrier layers. The spin barrier layer is between the free and second pinned layers. The spin barrier layer is configured to reduce an outer surface contribution to the free layer damping constant. In one aspect, the spin barrier layer has a high areal resistance and may substantially eliminate spin pumping induced damping. In another aspect, the magnetic element also includes a spin accumulation layer between the spin barrier and free layers. The spin accumulation layer has a high conductivity and may have a long spin diffusion length.

A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB / FeSiO / CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR / R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR / R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.

A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a high damping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent to the free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.

The invention relates to a method and a device (1) for the online-detection of a deterioration in the state of an insulation in an electric machine (2). A stepped voltage is applied to the winding(s) (3) of the machine (2) with the aid of a converter (41), and the current (i) induced in this manner, and / or the time derivative (di / dt) thereof, is acquired as a measurement signal with the aid of at least one sensor (6, 7, 8) and is then oversampled with a frequency higher than the frequencies characteristic for settling. The signal obtained by said oversampling is then evaluated with regard to parameters of the settling process such as overshooting (Ah) and / or natural frequency (1 / delta T) and / or a damping constant, in order to detect any deterioration in the insulation.

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Provided are an apparatus and method for imaging the subsurface structure of a target area by using waveform inversion. In the apparatus and method, the subsurface structure of a target area is estimated using waveform inversion of a seismic signal in the frequency domain, the Laplace domain, or the Laplace-Fourier domain, and an objective function is defined by applying a weighting function such that the objective function makes a different contribution for each frequency, each Laplace damping constant, or each Laplace-Fourier damping constant. The objective function is not limited to a particular type of objective function and a weighting function can be automatically determined when a gradient vector for each frequency, each Laplace damping constant, or each Laplace-Fourier damping constant is normalized. In addition, a gradient direction for all frequencies can be defined by applying another weighting function to the sum of respective gradient vectors for all frequencies, all Laplace damping constants, or all Laplace-Fourier damping constants, wherein the weighting function can also be automatically determined by normalization.

A tunneling magnetoresistance (TMR) device has a thin MgO tunneling barrier layer and a free ferromagnetic multilayer. The free ferromagnetic multilayer includes a CoFeB first ferromagnetic layer, a face-centered-cubic (fcc) NiFe compensation layer with negative magnetostriction, and a body-centered-cubic (bcc) NiFe insertion layer between the CoFeB layer and the fcc NiFe compensation layer. An optional ferromagnetic nanolayer may be located between the MgO barrier layer and the CoFeB layer. An optional amorphous separation layer may be located between the CoFeB layer and the bcc NiFe insertion layer. The bcc NiFe insertion layer (and the optional amorphous separation layer if it is used) prevents the fcc NiFe layer from adversely affecting the crystalline formation of the MgO and CoFeB layers during annealing. The bcc NiFe insertion layer also increases the TMR and lowers the Gilbert damping constant of the free ferromagnetic multilayer.

In an MR element constituted in such a manner that a pinned layer whose magnetization direction is fixed, a nonmagnetic spacer layer, and a free layer whose magnetization direction is changed according to an external magnetic field, are laminated in this order; the free layer has a multilayer constitution including a magnetic body mixed with an element having 4f electrons at a ratio of 2 at % to 25 at. %. Specifically, the first layer in contact with the spacer layer, the third layer, the fifth layer, and the seventh layer of the free layer are formed by mixing Nd, Sm, Gd, or Tb into CoFe having a ratio of Co less than or equal to 70 at. %. The second layer and the sixth layer of the free layer are formed by mixing Nd, Sm, Gd, or Tb into NiFe having a ratio of Ni greater than or equal to 70 at. % and less than 100 at. %. The third layer of the free layer is Cu. A damping constant of the free layer is greater than 0.018.

A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording disk drive, has low magnetic damping, and thus low mag-noise, as a result of the addition of a ferromagnetic backing layer to the ferromagnetic free layer. The backing layer is a material with a low Gilbert damping constant or parameter α, the well-known dimensionless coefficient in the Landau-Lifshitz-Gilbert equation. The backing layer may have a thickness such that it contributes up to two-thirds of the total moment / area of the combined free layer and backing layer. The backing layer may be formed of a material having a composition selected from (CoxFe(100-x))(100-y)Xy, (Co2Mn)(100-y)Xy and (Co2FexMn(1-x))(100-y)Xy, where X is selected from Ge, Al and Si, and (Co2Fe)(100-y)Aly, where y is in a range that results in a low damping constant for the material.

A passive deployable antenna mechanism is provided, which is characterized in that the device comprises: an antenna mounting plate (1), a damping speed stabilization mechanism (2), an antenna unfolding arm (3), a two-dimensional pointing mechanism (4), a spaceborne Antenna (5) and compression release device (6), damping and speed-stabilizing mechanism (2) are fixedly installed on one end of antenna mounting plate (1), and one end of antenna expansion arm (3) is connected with damping and speed-stabilizing mechanism (2), and another One end is connected to one end of the two-dimensional pointing mechanism (4), and the other end of the two-dimensional pointing mechanism (4) is connected to the satellite antenna (5), and the compression release device (6) is installed on the antenna unfolding arm (3), two Between the three-dimensional pointing mechanism (4), the spaceborne antenna (5) and the antenna mounting plate (1), it is used for locking the antenna mechanism in the satellite launching state, and releasing the antenna mechanism after the satellite enters orbit.

An image forming apparatus includes: a driving source configured to generate power; a first rotator configured to be drivingly rotated by the power generated by the driving source; a first power transmission system configured to transmit the power from the driving source to the first rotator; a second rotator configured to be drivingly rotated by the power generated by the driving source; and a second power transmission system configured to transmit the power to the second rotator from the first power transmission system. A damper having a torsion spring constant and a torsion viscous damping constant making a maximum positional change value of the first rotator equal to or smaller than a predetermined positional change value is disposed between the first power transmission system and the second power transmission system.

A Laplace transform system comprising a processor, a measured time domain wavefield, a velocity model, and Laplace damping constants, wherein the processor is programmed to calculate a substantially about zero frequency component of a Fourier transform of a time domain damped wavefield, wherein the time domain damped wavefield is damped by the Laplace damping constants to obtain long wavelength velocity information for deeper subsurface regions.

A method of controlling an electro-hydraulic system is provided. The method includes receiving an input corresponding to an operator commanded adjustment of the system, and determining an output at a time increment to adjust the electro-hydraulic system based at least in part on the input, at least one output at a previous time increment and at least one predetermined damping constant. A work machine and method of preparing an electro-hydraulic system of a work machine for operation are also provided. The work machine includes an electro-hydraulic system with at least one movable control member, a manual input device and an electronic controller. The electronic controller includes a control algorithm for generating an output to adjust the position of the at least one movable control member. The method of preparing includes determining a damping constant for damping a response of the electro-hydraulic system, and programming an electronic controller of the work machine with a control algorithm for controlling the hydraulic system, and adjusting a position of the control member based at least in part on the at least one damping constant.

The invention discloses a formation device and method for an in-cavity polyurethane foamed aluminum profile. The device and the method are applied to the processing of a heat-insulated aluminum profile. The formation device comprises an aluminum profile conveying line, a glue supplying device, an U-shaped paper strip forming device and a control device, wherein the U-shaped paper strip forming device comprises an unwinding and winding device, a former and a traction device which are sequentially arranged on a worktable; the former comprises an outer die of which an inner cavity is loudspeaker-shaped, and a core die which is inserted into the outer die; the unwinding and winding device is of a passive damping constant-tension unwinding and winding structure; the traction device can drive a paper belt to be gradually converted into an U-shaped paper strip while running through the former; polyurethane glue A and polyurethane glue B are mixed in a glue injecting head, then flow from a glue injecting port into an U-shaped paper strip groove and finally enter a cavity A to be foamed and solidified to obtain the in-cavity polyurethane foamed aluminum profile. With the adoption of the device and the method, the problem that a gap is formed in a connecting part of the aluminum profile in a strip penetrating method and easily leads to air convection can be solved; the heat insulation effect can be improved; the connecting strength of the aluminum profile can be improved.

A power take-off unit (“PTO”) may include a damper to reduce noise while the PTO is operating at low torque or at low RPM. The damper may also be located in the transmission before the PTO driver gear. A method may be used to systematically measure the frequency and / or amplitude of the vibrations that cause noise and to adjust the damping constant of a damper to reduce the noise.

A drilling rig apparatus is disclosed for mitigating stick-slip using a saver sub that is compatible with different top drives. The saver sub includes a smart material adjustable whenever a stand is added to the drill string to have different spring characteristics to generally match the impedance of the top drive to the impedance of the drill string. The saver sub also includes a magneto rheological fluid that is adjusted whenever a stand is added to the drill string to compensate for the changed characteristics of the drill string. The damping constant implemented by the MR fluid enables the saver sub to absorb stick-slip vibrations at the top drive. Each time that a stand is connected to the drill string, the spring and damping constants may be updated to accommodate the changing characteristics of the drill string.

A semiconductor device to which magnetic domain wall movement is applied is provided. The semiconductor device includes a magnetic substance film in which magnetic domain walls are moved, and the magnetic substance film has a damping constant of 0.015 to 0.1.

A method reduces the Q factor of the resonant frequency response of a torsional oscillator system in a laser printer, where the Q factor is expressed as a function of the resonant frequency and 3 dB bandwidth of the frequency response. The frequency response of the torsional oscillator system is a function of at least a rotational inertia, a spring constant and a damping constant. The method includes the steps of decreasing the rotational inertia of the torsional oscillator system by a first factor, and decreasing the spring constant by a second factor that is substantially equal to the first factor. The method generally increases component yields, thereby reducing component costs. Also, laser printers using torsion oscillators having reduced Q factors may be used over a wider speed range. Conversely, a single laser printer model may be used at a single speed, rather than at speeds that vary due to variations in resonant frequency. The method also provides for greater freedom of movement of the operating point of the printer during printer development.