Magnetic device and method for setting same

一种磁装置、磁性结的技术，应用在电磁装置的制造/处理、电磁设备的零部件、磁场控制的电阻器等方向，能够解决SO力矩效率限制等问题

Active Publication Date: 2018-08-07
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Use of AFM or biased structures can lead to limited efficiency of SO moments

Method used

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  • Magnetic device and method for setting same
  • Magnetic device and method for setting same
  • Magnetic device and method for setting same

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Embodiment Construction

[0018] Exemplary embodiments relate to magnetic junctions that may be used in magnetic devices such as magnetic memories, and devices using such magnetic junctions. Magnetic memory may include Magnetic Random Access Memory (MRAM) and may be used in electronic devices employing non-volatile memory. Such electronic devices include, but are not limited to, cellular telephones, smartphones, desktop computers, laptop computers, and other portable and non-portable computing devices. The following description is presented to enable one of ordinary skill in the art to make and use the invention, and it is provided in the context of a patent application and its claims. Various modifications to the exemplary embodiments and general principles and features described herein will be apparent. The exemplary embodiments are primarily described with respect to specific methods and systems provided in the detailed description. However, the methods and systems will operate effectively in othe...

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Abstract

A magnetic device and a method for setting the same are provided. A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described.Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a highdamping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent tothe free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.

Description

[0001] This application claims the benefit of Provisional Patent Application No. 62 / 453,104, filed February 1, 2017, entitled SOT MRAM WITH TILTED AXIS ANDENHANCED DAMPING, which assigns to the assignee of this application and is incorporated herein by reference. technical field [0002] The present invention relates to a magnetic device comprising a magnetic junction with a tilted easy axis and enhanced damping that is programmable using spin-orbit torque and a method of arranging the same. Background technique [0003] Magnetic memories, especially Magnetic Random Access Memory (MRAM), have received increasing attention due to their high read / write speed, excellent endurance, non-volatility and potential for low power consumption during operation . MRAM can store information using a magnetic material as an information recording medium. Some magnetic memories use electric current to write to the magnetic material. One such magnetic memory utilizes spin-orbit interaction ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12
CPCH10N50/10H10N50/01H01F10/126H01F10/3286H01F41/303H01F10/329H01F10/324H01F10/123G11C11/1675G11C11/161G11C11/18H10B61/00H10N50/85H10N50/80
Inventor 郑洪植罗曼·凯普斯肯唐学体德米特罗·埃帕尔科夫
Owner SAMSUNG ELECTRONICS CO LTD
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