The invention discloses a
molecular dynamics simulation method, device and equipment oriented to a
molecular beam epitaxy process, and relates to the technical field of deposition in microelectronic manufacturing, and the method comprises the steps: analyzing a
transition state path, and constructing an initialized
data set; training an initial neural evolution potential function based on the initialized
data set, performing a small-scale extrapolation experiment, establishing an
evaluation function, screening a differentiation configuration, and executing DFT precision
verification to form an enhanced
training set; after multi-round iteration, a final potential function is output until a convergence condition is met; large-scale
molecular dynamics simulation is carried out, different data sets are constructed, a potential function is trained after
feature fusion and
cross validation, deduction is carried out, the
deposition rate is counted, and the reaction deposition selection ratio is estimated. According to the method, the dynamic
evolution rule of the heterogeneous interface defect can be accurately analyzed, the real technological process problem is flexibly locked, and
microsecond-level real-time closed-loop accurate control of the atomic layer growth rate is realized.