Super junction collector region SiGe heterojunction bipolar transistor

Abstract

The invention discloses a super junction collector region SiGe heterojunction bipolar transistor. According to the transistor, a super junction collector region structure where n-type semiconductor columns and p-type semiconductor columns are alternately arrayed is adopted; a transverse electric field is introduced, collector region electric field distribution is improved, and then the breakdown voltage of the device is improved. According to a base region Ge component, the staircase distribution structure where gradual increase occurs from the side of an emitter junction to the side of a collector junction is adopted; a minority carrier acceleration electric field is introduced, the base region transit time is effectively shortened, and then the characteristic frequency of the device is improved. The current gain of the device and the temperature sensitivity of the characteristic frequency are improved, drift of a static working point of the device is effectively avoided, and stable work of the device is facilitated. Compared with a conventional power heterojunction bipolar transistor, the super junction collector region SiGe heterojunction bipolar transistor has the advantages that the transistor has the high breakdown voltage characteristic and the excellent frequency characteristic, the static working point of the device can not easily deviate during working and can not easily drift along with the change of the working temperature, and stable work of the device in the field of sub-terahertz power application can be achieved.

Description

technical field [0001] The invention relates to silicon germanium (SiGe) heterojunction bipolar transistors, especially those used in millimeter-wave radar, Gb / s level wireless local area network, 100Gb / s Ethernet, terahertz imaging system and other sub-terahertz frequency bands with high characteristic frequency and high Superjunction Collector SiGe Heterojunction Bipolar Transistor with Breakdown Voltage of Merit. Background technique [0002] SiGe heterojunction bipolar transistor (Heterojunction Bipolar Transistor, HBT) has high output power, excellent high-frequency characteristics, high linearity, and is compatible with mature Si technology, and has been widely used in high-power voltage-controlled oscillation In high-power output microwave circuits such as devices, 4-channel frequency-tunable radars, X-band active array antennas, intelligent mobile communication terminals, and global broadband wireless access systems. Especially with the overall improvement of the fo...

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Problems solved by technology

However, the value of x cannot be selected too large (usually x<0.3), and too large x will cause lattice mismatch between the Si material of the emitter and the SiGe material of the base area, thereby generating dislocation defects.

At the same time, the current gain (β) corresponding to a larger x value is usually larger, and it is more sensitive to changes in operating bias and operating temperature, which can easily cause the drift of the static operating point of the device, which is not conducive to the stable operation of the device.

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