Open-and-close type three-dimensional trench electrode silicon detector

A grooved electrode, open-close technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of single-sided incident of particles, large dead zone, affecting the detection performance of the detector, etc., to achieve sensitive response, high detection efficiency, The effect of reducing the ratio of the dead zone
CN106449801AActive Publication Date: 2017-02-22XIANGTAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIANGTAN UNIV
Publication Date
2017-02-22

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Abstract

The invention discloses an open-and-close type three-dimensional trench electrode silicon detector. An open-and-close type groove electrode and a central electrode are formed after etching on the silicon through diffusion and doping, the open-and-close type groove electrode surrounds the central electrode, the central electrode is connected with the negative electrode, the open-and-close type groove electrode is connected with the positive electrode, and the open-and-close type groove electrode is an open and discontinuous cylindrical structure. The bottom of the detector has a silicon dioxide protective layer. The area of the dead zone is smallest, particles can enter from both sides during working, and reaction is more flexible. The problem that in the prior art, the three-dimensional silicon detector can only be single-sided etched, the particles can only be incident on one side, and there is a dead zone, so that the detection performance of the detector is affected.
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Description

technical field

[0001] The invention belongs to the technical field of high-energy physics and astrophysics, and relates to an openable three-dimensional groove electrode silicon detector. Background technique

[0002] Detectors are widely used in high-energy physics, astrophysics, aerospace, military, medical and other technical fields. In high-energy physics and astrophysics, the detector is under strong irradiation conditions, so there are strict requirements on the detector itself. It has a strong ability to resist radiation, and the leakage current and full depletion voltage cannot be too large, and there are different requirements for its size. The traditional "three-dimensional trench electrode silicon detector" has many deficiencies. First of all, when the electrode is etched, it cannot completely penetrate the entire silicon body, so that a part of the detector cannot be etched, and this part is called "dead area". ", the electric field in the "dead zone" part is w...

Claims

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