Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Open-and-close type three-dimensional trench electrode silicon detector

A grooved electrode, open-close technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of single-sided incident of particles, large dead zone, affecting the detection performance of the detector, etc., to achieve sensitive response, high detection efficiency, The effect of reducing the ratio of the dead zone

Active Publication Date: 2017-02-22
XIANGTAN UNIV
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solve the problem that the three-dimensional silicon detector in the prior art can only be etched on one side, the particles can only be incident on one side, and there is a large dead zone, which affects the detection performance of the detector

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Open-and-close type three-dimensional trench electrode silicon detector
  • Open-and-close type three-dimensional trench electrode silicon detector
  • Open-and-close type three-dimensional trench electrode silicon detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The structure of the present invention, such as figure 2 , Figure 4 As shown, the open-close trench electrode 6 and the central electrode 1 are formed through diffusion doping on the silicon body 3, and the open-close trench electrode 6 surrounds the central electrode 1, and the open-close trench electrode 6 exists Open, discontinuous cylindrical structure, the inner arc length S of the opening of the split trench electrode 6 is 10 μm, and a 1 μm silicon dioxide protective layer 5 is provided at the bottom of the entire structure.

[0023] The central electrode 1 is a hollow cylinder. The central electrode 1 is connected to the negative electrode. Its radius is 5 μm. The uppermost layer is 1 μm aluminum, and the lower layer of the aluminum layer is 200 μm heavily doped borosilicate. The heavily doped borosilicate is a donor and provides electrons. The split trench electrode 6 is a hollow cylindrical ring, the split trench electrode 6 is connected to the positive elec...

Embodiment 2

[0025] Embodiment 2, the structure of the present invention, except that the arc length S inside the opening of the open-close trench electrode 6 is 3 μm, and the thicknesses of heavily doped borosilicate, heavily doped phosphorus silicon, and lightly doped borosilicate are all 500 μm, the rest Part is the same as Example 1.

Embodiment 3

[0026] Embodiment 3, the structure of the present invention, except that the arc length S inside the opening of the open-close trench electrode 6 is 8 μm, and the thicknesses of heavily doped borosilicon, heavily doped phosphorus silicon, and lightly doped borosilicate are all 300 μm, the rest Part is the same as Example 1.

[0027] The structure of the array of the present invention, such as image 3 shown by figure 2 A single detector unit structure is combined.

[0028] In terms of technology, the trench electrode is etched by a photolithography machine and ion implanted. The traditional "three-dimensional trench electrode silicon detector" can only be etched on one side, and the particles are injected on one side, but the split trench electrode 6 of the split three-dimensional trench electrode silicon detector of the present invention is formed when the groove is etched. The hexagonal or circular structure formed by incomplete etching can be etched on the upper and low...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an open-and-close type three-dimensional trench electrode silicon detector. An open-and-close type groove electrode and a central electrode are formed after etching on the silicon through diffusion and doping, the open-and-close type groove electrode surrounds the central electrode, the central electrode is connected with the negative electrode, the open-and-close type groove electrode is connected with the positive electrode, and the open-and-close type groove electrode is an open and discontinuous cylindrical structure. The bottom of the detector has a silicon dioxide protective layer. The area of the dead zone is smallest, particles can enter from both sides during working, and reaction is more flexible. The problem that in the prior art, the three-dimensional silicon detector can only be single-sided etched, the particles can only be incident on one side, and there is a dead zone, so that the detection performance of the detector is affected.

Description

technical field [0001] The invention belongs to the technical field of high-energy physics and astrophysics, and relates to an openable three-dimensional groove electrode silicon detector. Background technique [0002] Detectors are widely used in high-energy physics, astrophysics, aerospace, military, medical and other technical fields. In high-energy physics and astrophysics, the detector is under strong irradiation conditions, so there are strict requirements on the detector itself. It has a strong ability to resist radiation, and the leakage current and full depletion voltage cannot be too large, and there are different requirements for its size. The traditional "three-dimensional trench electrode silicon detector" has many deficiencies. First of all, when the electrode is etched, it cannot completely penetrate the entire silicon body, so that a part of the detector cannot be etched, and this part is called "dead area". ", the electric field in the "dead zone" part is w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0203
CPCH01L31/0203H01L31/022416
Inventor 李正唐立鹏刘曼文冯明富
Owner XIANGTAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com