2results about How to "Uniform potential distribution" patented technology

The present application relates to a kind of new near hemispherical probe and its preparation method, the near hemispherical probe can retain the excellent electrical characteristics of three-dimensional spherical structure, the area of collection electrode is small under the same electrode spacing, and the capacitance is low, and charge collection efficiency is almost independent of θ.Hemispherical electrode has good sealing, completely isolates detection sensitive area from substrate, dark current is not affected by wafer thickness, and extremely low noise is conducive to low-energy X-ray or low-energy particle detection.

The application discloses a high-mobility silicon carbide N-type LDMOS device with reduced on-resistance, which comprises an N-type substrate, a P-type epitaxial layer arranged on the N-type substrate, an N-type well region, a first P-type heavily doped region, a first N-type heavily doped region, a second P-type heavily doped region connected to a source, a second N-type heavily doped region connected to a drain arranged in the N-type well region, the first P-type heavily doped region, the first N-type heavily doped region and the second P-type heavily doped region being connected, an oxide layer arranged on the surface of the second N-type heavily doped region, the N-type well region, the first P-type heavily doped region, the first N-type heavily doped region, the second P-type heavily doped region and the P-type epitaxial layer, a polycrystalline silicon trench gate serving as a gate of the device and extending into the P-type epitaxial layer, and an N-type buried layer arranged in the P-type epitaxial layer, one end of the N-type buried layer being connected to a channel of the device and the other end being connected to the N-type well region.