45results about How to "Uniform potential distribution" patented technology

A system for providing at least two output signals to produce a substantially uniform potential profile includes a signal generator adapted to emit a frequency at least about 30 megahertz, a splitter in communication with the signal generator, and a signal manipulator in communication with the splitter. The splitter is adapted to split the signal of the signal generator into the two output signals, and the signal manipulator is adapted to manipulate a phase, a gain, or an impedance of the two output signals. The signal manipulator manipulates the two output signals so that the two output signals produce the substantially uniform potential profile.

The invention relates to a method for recycling copper from electroplating sludge and electroplating wastewater, and relates to the technical field of chemical engineering and metallurgy. The method adopts process technologies such as leaching, homogenization, tubular electrolysis and fluidized electrodeposition to obtain a high-value electrolytic copper plate and electrodeposited copper powder respectively; the comprehensive recovery rate of copper is more than 98% which is obviously superior to that of traditional recovery methods such as displacement method and chemical precipitation method, and coupon electrodeposition method; and the method is widely suitable for different kinds of copper-containing electroplating sludge and copper-containing electroplating wastewater. The obtained electrolytic copper plate meets the demands of GB / T467-1997 on the standard cathode copper with a brand of Cu-CATH-2 and the copper content of the obtained electrodeposited copper powder is more than 80%.

The invention discloses an open-and-close type three-dimensional trench electrode silicon detector. An open-and-close type groove electrode and a central electrode are formed after etching on the silicon through diffusion and doping, the open-and-close type groove electrode surrounds the central electrode, the central electrode is connected with the negative electrode, the open-and-close type groove electrode is connected with the positive electrode, and the open-and-close type groove electrode is an open and discontinuous cylindrical structure. The bottom of the detector has a silicon dioxide protective layer. The area of the dead zone is smallest, particles can enter from both sides during working, and reaction is more flexible. The problem that in the prior art, the three-dimensional silicon detector can only be single-sided etched, the particles can only be incident on one side, and there is a dead zone, so that the detection performance of the detector is affected.

To provide a semiconductive rubber member causing no substantial sticking of foreign matter represented by a toner outer additive for a long period through reducing the surface free energy of the rubber member while maintaining its electrical properties' uniformity and design values' repeated reproducibility, excellent in processability and substantially exhibiting no surface defects including molding unevenness and cracks. This semiconductive rubber member is obtained by compounding 100 pts. mass of an ionically conductive rubber including a rubber having polyether linkages with 0.1-5 pt(s). mass of a wax. In this rubber member, it is preferable that the rubber having the polyether linkages to be used consists of a polymer made from a halogen-containing ether-based monomer and, when desired, a halogen-free ether-based monomer and / or a copolymerizable unsaturated epoxide-based monomer.

A semiconductor device comprises: a semiconductor layer; a first conductivity type first impurity region; a second conductivity type body region; a first conductivity type second impurity region; a field insulating film; a gate insulating film; a first floating plate provided in the form of a ring having a constant width on the field insulating film; and a second floating plate provided in the form of a ring having a constant width on the same layer above the first floating plate, wherein the first floating plate and the second floating plate are formed by not less than three in total so that the peripheral lengths at the centers in the width direction thereof are entirely different from one another, alternately arranged in plan view so that the one having a relatively smaller peripheral length is stored in an inner region of the one having a relatively larger peripheral length, and formed to satisfy the relational expression: L / d=constant (L: the outer periphery of the inner one of the first and second floating plates adjacent to each other in plan view, d: the distance between the outer periphery of the plate defining L and the inner periphery of the first or second floating plate adjacent to the plate to be opposed to the outer periphery thereof).

The invention relates to a tank-type arrester in the field of high-voltage electrical appliance. The tank-type arrester comprises an outlet insulator, a base and a ground plate, an outlet conductor is arranged on the outlet insulator, the outlet insulator is arranged on the base, the outlet insulator is located below an outlet flange, one end of the outlet conductor stretches out of the base, and the other end of the outlet conductor is electrically connected to the ground plate. Compared with the existing arrester, the tank-type arrester is free of a conductive connection member between the outlet conductor and the ground plate and simplifies an outlet structure. The outlet conductor and a core close are arranged in a nearly coaxial way so that the electric field and potential around the core and the outlet conductor are uniformly distributed.

The invention provides a low-resistance device with equipotential floating grooves, and the device comprises a first conductive type semiconductor substrate, a first conductive type well region, a first conductive type source end heavily doped region, a second conductive type drift region, a second conductive type well region, a second conductive type source end heavily doped region and a second conductive type drain end heavily doped region, a first dielectric oxide layer, a second dielectric oxide layer, a third dielectric oxide layer, a floating field plate polycrystalline silicon electrode, a control gate polycrystalline silicon electrode, source metal, drain metal and a metal strip; the first dielectric oxide layer and the floating field plate polycrystalline silicon electrode form alongitudinal floating field plate which is distributed in the whole second conductive type drift region; under the same length, the dielectric layer can bear higher breakdown voltage, the floating electrode can modulate the potential distribution of the drift region, so the potential distribution is uniform, the withstand voltage of the device is further improved, the floating field plate assistsin depletion, and the injection dose of the drift region can also be improved, so that the specific on-resistance is reduced.

The application discloses a method for suppressing zinc dendrite in a zinc negative electrode battery over a wide temperature range, and particularly relates to a separator modifying method for zinc in a negative battery, which uniformly disperses polymer compounds having hydrophilic groups in separators to reduce the contact angle between the electrolyte and the zinc negative electrode and make the potential distribution on the surface of the zinc negative electrode more uniform, thereby making the deposition of zinc ions more uniform. Compared with the existing method for inhibiting zinc dendrite, the method is not only more obvious in the effect of inhibiting zinc dendrite, but is more conducive to practical operation, and lower in cost.

The application discloses a method for suppressing zinc dendrite in a zinc negative electrode battery over a wide temperature range, and in particular to a separator modifying method for a zinc negative electrode battery. High-molecular compounds having hydrophilic groups are uniformly dispersed in separators to lower the contact angle between the electrolyte and the zinc negative electrode such that the potential distribution on the surface of the zinc negative electrode is more uniform, thereby making the deposition of zinc ions more uniform. Compared with the existing method for inhibitingzinc dendrite, the method provided by the invention not only has more obvious effect of inhibiting zinc dendrites, but also is more conducive to practical operations with lower cost.

The invention discloses a strengthening control method of photoelectro-Fenton pretreatment of tea polyphenol pharmaceutical wastewater. The strengthening control comprises the following steps: (1) firstly introducing tea polyphenol pharmaceutical wastewater into an adjusting tank, adding Ca(OH)2 to adjust the pH value of the wastewater to 2.5-4, and adding Na2SO4 as an electrolyte of a subsequentphotoelectro-Fenton reaction so as to improve the electrical conductivity of the tea polyphenol pharmaceutical wastewater solution; and (2) introducing the adjusted effluent to a photoelectro-Fenton oxidation reaction tank. According to the strengthening control method provided by the invention, a three-electrode reaction and ultraviolet lamp irradiation are adopted; a H2O2 water solution is automatically generated by an electrochemical method in a certain amount of the sodium sulfate electrolyte; and no additional Fe is needed, the inconvenience caused by the addition of H2O2 is avoided, andthe use cost of additional reagents is reduced. Compared with a conventional Fenton reaction, the method provided by the invention has the additional ultraviolet lamp irradiation, and oxygen in the solution can be promoted to generate H2O2, so that more .OH is generated, and the degradation of organic matter in the wastewater solution is improved.

The present invention discloses a junction field effect transistor which comprises a P type substrate, a P type buried layer, N type buried layers arranged at two sides of the P type buried layer, an N type epitaxial layer, a first isolation structure, a second isolation structure, a third isolation structure and a fourth isolation structure which are arranged on the N type epitaxial layer, a source electrode area arranged between the first isolation structure and the second isolation structure, a first N well area arranged under the source electrode area, a gate electrode area arranged between the second isolation structure and the third isolation structure, a drain electrode area arranged between the third isolation structure and the fourth isolation structure, a second well area arranged under the source electrode area, and at least one P type field limit ring which is arranged above the N type epitaxial layer and is between the source electrode area and the drain electrode area. According to the above junction field effect transistor, the effect of Triple RESURF can be realized, the pinch-off voltage can be reduced effectively, and the purpose of low pinch-off voltage is realized. The invention also discloses the preparation method of the junction field effect transistor.

The invention discloses an enhanced high electron mobility transistor and a manufacturing method thereof. The objective of the invention is to solve the problems that an existing power switch device is low in threshold voltage and complex in process when high breakdown voltage is achieved. The transistor comprises a substrate (1), a transition layer (2), a barrier layer (3), a gate groove (4), a drain groove (5), a P-type layer (6), a P-type drain column (7), a gate column (9), a source (11), a table top (14), a grid electrode (15) and a passivation layer (16) N-type row columns (8) are arranged in the grid columns; array holes (10) are formed in the barrier layer on the left side of the gate column and the barrier layer on the right side of the P-type drain column; an ohmic contact (12) is arranged on the right side of the P-type drain column, and the P-type drain column and the ohmic contact jointly form a drain electrode (13); a composite plate (17) is arranged at the upper part ofthe passivation layer; and a protective layer (18) is arranged on the peripheries of the passivation layer and the composite board. The transistor is simple in process, good in forward blocking and reverse blocking and high in threshold voltage, and can be used as a switching device.

The invention relates to a power-junction-type field effect transistor comprising a P-type substrate, a buried layer region which is arranged on the substrate, a well region which is arranged on the buried layer region, an N-type source electrode and a drain electrode, a P-type gate electrode and a junction region. The source electrode, the drain electrode, the gate electrode and the junction region are arranged in the well region. The buried layer region comprises an N-type buried layer and a P-type buried layer which is arranged at the external side of the N-type buried layer. The well region comprises an N-well which is arranged on the N-type buried layer and a P-well which is arranged on the P-type buried layer and positioned at the external side of the N-type buried layer. The junction region is provided with multiple strip-shaped structures which are arranged in a spacing way and separated by the N-well. The drain electrode is arranged in the N-well and positioned at the internal side of the strip-shaped structure of the innermost side. The source electrode is arranged in the N-well and positioned at the external side of the strip-shaped structure of the outermost side. The part, which is arranged exactly above the P-type buried layer, of the N-well and the P-well are interdigital-arranged in a staggered way. The invention also relates to a circular power-junction-type field effect transistor and a manufacturing method of the power-junction-type field effect transistor. Low pinch-off voltage can be ensured and high current driving capability and high voltage withstanding can be acquired simultaneously.

The invention provides a method and device for obtaining a high-voltage electricity surface unipolar discharging trace. Through cooperation of a conductive additive, the unipolar discharging trace canbe obtained on the surface of a product through pulse direct current. In the method and the device, a PWM signal generator generates a drive signal, a direct-current pulse voltage is obtained by stimulating a boosting transformer and a rectifying circuit through a power amplifier, the voltage is transmitted to a positive electrode and a negative electrode, the positive electrode and the negativeelectrode are then placed on the product where the conductive additive permeates the surface layer, surface discharging is conducted from an anode or a cathode, and the unipolar discharging trace is left on the surface layer of the product. The macroscopic pattern of the discharging trace has fractal features and can be used for artistic creation, fractal picture template manufacture and craft manufacture. Compared with a method and device for obtaining a discharging trace by applying the industry alternating-current high voltage on the surface of a wet material, the method has the beneficialeffects that unipolar control is achieved, operability is high and pattern continuity is ensured; and the device has the beneficial effects that the device is easy to obtain and the structure is simple.

The invention discloses a lower electrode mechanism of plasma processing equipment. The lower electrode mechanism comprises a lower electrode base plate, an ground pole supporting member, a ground pole, a support plate supporting member, a support plate, and a heater, and the lower electrode base plate is grounded. The ground pole supporting member is arranged above the lower electrode base plate, and is capable of being vertically lifted up and down. The upper end of the ground pole is connected to the support plate supporting member, and the lower end of the ground pole is connected to the ground pole supporting member. The support plate supporting member is arranged above the ground pole supporting member, is grounded, and is electrically insulated from the ground pole. The support plate is supported by the support plate supporting member, and is directly grounded through the support plate supporting plate. The heater is arranged between the support plate supporting member and the ground pole supporting member. The lower electrode mechanism has the advantages of simple ground current route and high repeatability, and solves the problem of imperfect earth of lower electrode. The invention also discloses plasma processing equipment comprising the lower electrode mechanism.

The invention relates to a water-cooling radiating device used for a 110kV thyristor valve body. The thyristor is a switching device with a semiconductor element; the water-cooling radiating device comprises a water inlet tube and a water outlet tube; a water inlet branch tube which is connected with the water inlet tube, a water distribution tube which is provided with a radiating assembly and a water return branch tube which is connected with the water return tube are sequentially arranged between the water inlet tube and the water outlet tube; and the radiating assembly is in the form of a rectangle which is formed by in series connecting radiating elements, and is connected with the thyristor at two sides. The water-cooling radiating device used for the 110kV thyristor valve body provided by the invention has the advantages of being simple in structure, reasonable in layout, and not liable to have an air bubble dead zone, get rusty and corrode.

The present invention is a cathode for preventing corrosion, by means of an external power supply in which a reinforcing layer comprising a fiber base material is laminated by an adhesive layer to one surface of a conductive layer comprising a graphite sheet, and an electrolyte layer of an electrolyte-containing resin formed into a sheet profile and having adhesive power such that the layer is capable of adhesion to the conductor layer and to the surface layer of a body targeted for corrosion prevention is adhered through the adhesive power thereof to the other surface of the conductor layer, wherein the conductor layer at all times has a resistance value of 4 OMEGA or less between any two points on the surface on the side thereof that contacts the electrode layer.

The invention belongs to the technical field of novel thin film solar cell preparation, and particularly discloses a tin-based perovskite solar cell and a preparation method thereof. According to the method, phenylethylamine bromide is added into a tin-based perovskite precursor solution, and the tin-based perovskite thin film is prepared by adopting one-step spin coating. The additive is helpful for improving the crystallization quality of the film, improving the morphology, reducing the internal defect mode and reducing non-radiative recombination. In addition, a matching energy band structure formed by the absorption layer prepared by the technology and the charge transport layer enhances the carrier transport capability. The photoelectric conversion efficiency of the corresponding tin-based perovskite solar cell device reaches 14.65%, and the photoelectric conversion efficiency of the tin-based perovskite solar cell device is still kept above 90% of the initial value after the tin-based perovskite solar cell device is placed for 4800 hours. The data show that the addition of the phenethylamine bromide in the precursor solution is a preparation method for effectively improving the photoelectric conversion efficiency and the stability of the tin-based perovskite battery.

The invention belongs to the field of a semiconductor power device, relates to a lateral voltage withstanding region and specifically provides a super-junction lateral voltage withstanding region witha groove and having an impedance field plate. A junction edge terminal or a lateral semiconductor power device applied to a semiconductor power device comprises an LDMOS (Lateral Double-Diffused MOSFET) and an LIGBT (Lateral Insulated Gate Bipolar Transistor). The impedance field plate is added between the insulation medium groove in the super-junction lateral voltage withstanding region with thegroove and a semiconductor drift region having a super-junction structure to modulate surface electric field distribution under a reverse withstand voltage state to make the electric field more uniform, thereby optimizing the relationship between breakdown voltage and specific on-resistance.

The invention relates to the technical field of high-voltage power systems, and particularly relates to a 220 kV porcelain jacket metal oxide arrester for a high-altitude power system. The 220 kV porcelain jacket metal oxide arrester comprises a grading ring, two arrester units, a metal backing plate and an insulating base, wherein the two arrester units are connected with each other in series by virtue of the metal backing plate, the grading ring is connected to the top end of the upper arrester unit, and a substrate is fixedly connected to the lower end of the lower arrester unit by virtue of the insulating base. According to the 220 kV porcelain jacket metal oxide arrester for the high-altitude power system, the structure is redesigned, and a reasonable internal resistor post and conductive rod support structure is adopted, so that potential distribution of the MOA for the high-altitude power system at a large creepage distance is effectively equalized, faults are avoided, and safe and stable operation of the high-altitude power system is obviously guaranteed.

To regularize a potential distribution of a grid, prevent local corrosion and prolong product lifetime, a storage battery grid includes frame skeleton (2) in a rectangular shape, a lug portion (21) formed upward from an upper side (2a) of the frame skeleton (2), one or more of main vertical skeletons (3X) extending downward from the lug portion (21) in the frame skeleton (2); and a plurality of diagonal skeletons (4) that branch from at least the main vertical skeletons (3X) extending to both sides with the main vertical skeletons (3X) as axes, and that extend diagonally from the upper side (2a) to the lower side (2b). The plurality of diagonal skeletons (4) are disposed at intervals in a direction of extension of the main vertical skeletons (3X), and at least partial of the plurality of spaces demarcated with the main vertical skeletons (3X) as a portion of the sides are in a substantially quadrilateral shape.

The invention discloses a low-on-resistance groove type MOSFET structure and a preparation method thereof. The invention relates to the semiconductor technology. The low-on-resistance trench type MOSFET structure comprises a semiconductor substrate and also comprises a semiconductor epitaxial layer main body, a diaphragm layer and a metal covering layer are sequentially fixed on the semiconductorsubstrate, grooves which are arranged tightly and are of small channel structures are formed in the semiconductor epitaxial layer main body and located on a lower portion of the diaphragm layer in anarray mode, at least one annular groove is formed in each groove in the length direction of the groove, and the grooves and the annular grooves are filled with polycrystalline silicon. The bottoms ofthe grooves and the outer sides of the annular grooves are respectively provided with first ion distribution regions and second ion distribution regions of which the ion concentration is higher than that of the semiconductor epitaxial layer main body. The invention further provides the preparation method of the low-on-resistance trench MOSFET structure, the distribution of current in the whole epitaxial layer is more uniform, and the divergence angle is larger such that the on-resistance of the device is reduced, and the overall breakdown voltage of the device is improved.

The invention discloses an enhanced high electron mobility transistor and a manufacturing method thereof, which mainly solve the problems of low threshold voltage and complicated process for realizing high breakdown voltage in existing power switching devices, which include: a substrate (1), Transition layer (2), barrier layer (3), gate groove (4), drain groove (5), P-type layer (6), P-type drain column (7), gate column (9), source electrode (11 ), mesa (14), gate (15) and passivation layer (16). An N-type column column (8) is arranged inside the grid column; an array hole (10) is provided in the barrier layer on the left side of the grid column and in the barrier layer on the right side of the P-type drain column; There is an ohmic contact (12), and the P-type drain column and the ohmic contact together form a drain (13); a composite plate (17) is arranged on the upper part of the passivation layer; and a protective layer (18) is arranged on the periphery of the passivation layer and the composite plate. The invention has the advantages of simple process, good forward blocking and reverse blocking, high threshold voltage, and can be used as a switching device.

The invention discloses a marine horizontal grounding electrode arranged around an island, which comprises a grounding electrode power distribution device and a grounding electrode feeder electrode; It is laid horizontally on the seabed around the isolated island, and is electrically connected to the grounding electrode power distribution device. The invention uses an independent island as the ground electrode site, arranges the diversion center on the island, and fixes the feed electrode in the submarine channel around the island, which solves the problems of difficult land site selection and inconvenient installation and maintenance of the ocean ground electrode, and has the advantages of safety The advantages of reliability and easy maintenance.

The invention discloses a lower electrode mechanism of plasma processing equipment. The lower electrode mechanism comprises a lower electrode base plate, an ground pole supporting member, a ground pole, a support plate supporting member, a support plate, and a heater, and the lower electrode base plate is grounded. The ground pole supporting member is arranged above the lower electrode base plate, and is capable of being vertically lifted up and down. The upper end of the ground pole is connected to the support plate supporting member, and the lower end of the ground pole is connected to the ground pole supporting member. The support plate supporting member is arranged above the ground pole supporting member, is grounded, and is electrically insulated from the ground pole. The support plate is supported by the support plate supporting member, and is directly grounded through the support plate supporting plate. The heater is arranged between the support plate supporting member and the ground pole supporting member. The lower electrode mechanism has the advantages of simple ground current route and high repeatability, and solves the problem of imperfect earth of lower electrode. The invention also discloses plasma processing equipment comprising the lower electrode mechanism.

The disclosure relates to a modular multilevel sub-module, a valve tower and an AC withstand voltage testing method. Modular multi-level sub-module, including: DC capacitor, power semiconductor unit, energy harvesting power supply, main control circuit and supporting metal structure; DC capacitor includes DC capacitor positive pole, DC capacitor negative pole, connected in parallel with power semiconductor unit; energy harvesting power supply from DC capacitor energy harvesting; the power semiconductor unit includes power semiconductor devices, heat sinks and AC output ports; the energy harvesting power supply includes a metal case for the power supply, and the main control circuit includes a metal case for the circuit; the negative pole of the DC capacitor serves as an equipotential point; One or more of the casing, the heat sink and the supporting metal structure form an equipotential bonding surface, and the equipotential bonding surface is electrically connected to the equipotential points. The disclosure improves the anti-interference ability of the modular multi-level sub-module through the equipotential connection of metal parts in the modular multi-level sub-module.

The electrode sheet and the electrode belt with a quasi-periodic concave-convex liquid-holding structure provided by the invention belong to the technical field of electrical impedance tomography. The electrode sheet includes: an electrode sheet body with a working surface for fitting the human body; Liquid structure, including several liquid-holding grooves opened on the working surface, the liquid-holding grooves are used to fill the matching medium, several liquid-holding grooves are arranged symmetrically on the central axis on the working surface, and the groove depths of several liquid-holding grooves are the same . Due to the quasi-periodic quasi-periodic concave-convex liquid-holding structure on the working surface of the electrode sheet, the potential distribution on the surface of the electrode sheet can be more uniform and the modeling error can be reduced; in addition, the quasi-periodic concave-convex liquid-holding structure can be used for To accommodate the matching medium, when the electrode sheet moves, it can also ensure that there is enough matching medium on the working surface of the electrode sheet, so that the electrode sheet is in good contact with the surface of the human body, thereby improving the application effect of the matching medium.

The invention belongs to the field of semiconductor power devices, relates to a lateral withstand voltage region, and specifically provides a super junction grooved lateral withstand voltage region with a resistive field plate, which is applied to junction edge terminals of semiconductor power devices or lateral semiconductor power devices including LDMOS ( Lateral Double‑Diffused MOSFET), LIGBT (Lateral Insulated Gate Bipolar Transistor). The present invention adjusts the surface electric field distribution in the reverse withstand voltage state by adding a resistive field plate between the insulating dielectric groove in the superjunction tape groove lateral withstand voltage region and the semiconductor drift region with a superjunction structure, making it more uniform , thus optimizing the relationship between breakdown voltage and specific on-resistance.