43results about How to "Uniform potential distribution" patented technology

A system for providing at least two output signals to produce a substantially uniform potential profile includes a signal generator adapted to emit a frequency at least about 30 megahertz, a splitter in communication with the signal generator, and a signal manipulator in communication with the splitter. The splitter is adapted to split the signal of the signal generator into the two output signals, and the signal manipulator is adapted to manipulate a phase, a gain, or an impedance of the two output signals. The signal manipulator manipulates the two output signals so that the two output signals produce the substantially uniform potential profile.

The invention relates to a method for recycling copper from electroplating sludge and electroplating wastewater, and relates to the technical field of chemical engineering and metallurgy. The method adopts process technologies such as leaching, homogenization, tubular electrolysis and fluidized electrodeposition to obtain a high-value electrolytic copper plate and electrodeposited copper powder respectively; the comprehensive recovery rate of copper is more than 98% which is obviously superior to that of traditional recovery methods such as displacement method and chemical precipitation method, and coupon electrodeposition method; and the method is widely suitable for different kinds of copper-containing electroplating sludge and copper-containing electroplating wastewater. The obtained electrolytic copper plate meets the demands of GB/T467-1997 on the standard cathode copper with a brand of Cu-CATH-2 and the copper content of the obtained electrodeposited copper powder is more than 80%.

The invention discloses an open-and-close type three-dimensional trench electrode silicon detector. An open-and-close type groove electrode and a central electrode are formed after etching on the silicon through diffusion and doping, the open-and-close type groove electrode surrounds the central electrode, the central electrode is connected with the negative electrode, the open-and-close type groove electrode is connected with the positive electrode, and the open-and-close type groove electrode is an open and discontinuous cylindrical structure. The bottom of the detector has a silicon dioxide protective layer. The area of the dead zone is smallest, particles can enter from both sides during working, and reaction is more flexible. The problem that in the prior art, the three-dimensional silicon detector can only be single-sided etched, the particles can only be incident on one side, and there is a dead zone, so that the detection performance of the detector is affected.

To provide a semiconductive rubber member causing no substantial sticking of foreign matter represented by a toner outer additive for a long period through reducing the surface free energy of the rubber member while maintaining its electrical properties' uniformity and design values' repeated reproducibility, excellent in processability and substantially exhibiting no surface defects including molding unevenness and cracks. This semiconductive rubber member is obtained by compounding 100 pts. mass of an ionically conductive rubber including a rubber having polyether linkages with 0.1-5 pt(s). mass of a wax. In this rubber member, it is preferable that the rubber having the polyether linkages to be used consists of a polymer made from a halogen-containing ether-based monomer and, when desired, a halogen-free ether-based monomer and/or a copolymerizable unsaturated epoxide-based monomer.

The invention relates to a tank-type arrester in the field of high-voltage electrical appliance. The tank-type arrester comprises an outlet insulator, a base and a ground plate, an outlet conductor is arranged on the outlet insulator, the outlet insulator is arranged on the base, the outlet insulator is located below an outlet flange, one end of the outlet conductor stretches out of the base, and the other end of the outlet conductor is electrically connected to the ground plate. Compared with the existing arrester, the tank-type arrester is free of a conductive connection member between the outlet conductor and the ground plate and simplifies an outlet structure. The outlet conductor and a core close are arranged in a nearly coaxial way so that the electric field and potential around the core and the outlet conductor are uniformly distributed.

The invention provides a low-resistance device with equipotential floating grooves, and the device comprises a first conductive type semiconductor substrate, a first conductive type well region, a first conductive type source end heavily doped region, a second conductive type drift region, a second conductive type well region, a second conductive type source end heavily doped region and a second conductive type drain end heavily doped region, a first dielectric oxide layer, a second dielectric oxide layer, a third dielectric oxide layer, a floating field plate polycrystalline silicon electrode, a control gate polycrystalline silicon electrode, source metal, drain metal and a metal strip; the first dielectric oxide layer and the floating field plate polycrystalline silicon electrode form alongitudinal floating field plate which is distributed in the whole second conductive type drift region; under the same length, the dielectric layer can bear higher breakdown voltage, the floating electrode can modulate the potential distribution of the drift region, so the potential distribution is uniform, the withstand voltage of the device is further improved, the floating field plate assistsin depletion, and the injection dose of the drift region can also be improved, so that the specific on-resistance is reduced.

The invention discloses a strengthening control method of photoelectro-Fenton pretreatment of tea polyphenol pharmaceutical wastewater. The strengthening control comprises the following steps: (1) firstly introducing tea polyphenol pharmaceutical wastewater into an adjusting tank, adding Ca(OH)2 to adjust the pH value of the wastewater to 2.5-4, and adding Na2SO4 as an electrolyte of a subsequentphotoelectro-Fenton reaction so as to improve the electrical conductivity of the tea polyphenol pharmaceutical wastewater solution; and (2) introducing the adjusted effluent to a photoelectro-Fenton oxidation reaction tank. According to the strengthening control method provided by the invention, a three-electrode reaction and ultraviolet lamp irradiation are adopted; a H2O2 water solution is automatically generated by an electrochemical method in a certain amount of the sodium sulfate electrolyte; and no additional Fe is needed, the inconvenience caused by the addition of H2O2 is avoided, andthe use cost of additional reagents is reduced. Compared with a conventional Fenton reaction, the method provided by the invention has the additional ultraviolet lamp irradiation, and oxygen in the solution can be promoted to generate H2O2, so that more .OH is generated, and the degradation of organic matter in the wastewater solution is improved.

The present invention discloses a junction field effect transistor which comprises a P type substrate, a P type buried layer, N type buried layers arranged at two sides of the P type buried layer, an N type epitaxial layer, a first isolation structure, a second isolation structure, a third isolation structure and a fourth isolation structure which are arranged on the N type epitaxial layer, a source electrode area arranged between the first isolation structure and the second isolation structure, a first N well area arranged under the source electrode area, a gate electrode area arranged between the second isolation structure and the third isolation structure, a drain electrode area arranged between the third isolation structure and the fourth isolation structure, a second well area arranged under the source electrode area, and at least one P type field limit ring which is arranged above the N type epitaxial layer and is between the source electrode area and the drain electrode area. According to the above junction field effect transistor, the effect of Triple RESURF can be realized, the pinch-off voltage can be reduced effectively, and the purpose of low pinch-off voltage is realized. The invention also discloses the preparation method of the junction field effect transistor.

The invention discloses an enhanced high electron mobility transistor and a manufacturing method thereof. The objective of the invention is to solve the problems that an existing power switch device is low in threshold voltage and complex in process when high breakdown voltage is achieved. The transistor comprises a substrate (1), a transition layer (2), a barrier layer (3), a gate groove (4), a drain groove (5), a P-type layer (6), a P-type drain column (7), a gate column (9), a source (11), a table top (14), a grid electrode (15) and a passivation layer (16) N-type row columns (8) are arranged in the grid columns; array holes (10) are formed in the barrier layer on the left side of the gate column and the barrier layer on the right side of the P-type drain column; an ohmic contact (12) is arranged on the right side of the P-type drain column, and the P-type drain column and the ohmic contact jointly form a drain electrode (13); a composite plate (17) is arranged at the upper part ofthe passivation layer; and a protective layer (18) is arranged on the peripheries of the passivation layer and the composite board. The transistor is simple in process, good in forward blocking and reverse blocking and high in threshold voltage, and can be used as a switching device.

The invention relates to a power-junction-type field effect transistor comprising a P-type substrate, a buried layer region which is arranged on the substrate, a well region which is arranged on the buried layer region, an N-type source electrode and a drain electrode, a P-type gate electrode and a junction region. The source electrode, the drain electrode, the gate electrode and the junction region are arranged in the well region. The buried layer region comprises an N-type buried layer and a P-type buried layer which is arranged at the external side of the N-type buried layer. The well region comprises an N-well which is arranged on the N-type buried layer and a P-well which is arranged on the P-type buried layer and positioned at the external side of the N-type buried layer. The junction region is provided with multiple strip-shaped structures which are arranged in a spacing way and separated by the N-well. The drain electrode is arranged in the N-well and positioned at the internal side of the strip-shaped structure of the innermost side. The source electrode is arranged in the N-well and positioned at the external side of the strip-shaped structure of the outermost side. The part, which is arranged exactly above the P-type buried layer, of the N-well and the P-well are interdigital-arranged in a staggered way. The invention also relates to a circular power-junction-type field effect transistor and a manufacturing method of the power-junction-type field effect transistor. Low pinch-off voltage can be ensured and high current driving capability and high voltage withstanding can be acquired simultaneously.

The invention discloses a lower electrode mechanism of plasma processing equipment. The lower electrode mechanism comprises a lower electrode base plate, an ground pole supporting member, a ground pole, a support plate supporting member, a support plate, and a heater, and the lower electrode base plate is grounded. The ground pole supporting member is arranged above the lower electrode base plate, and is capable of being vertically lifted up and down. The upper end of the ground pole is connected to the support plate supporting member, and the lower end of the ground pole is connected to the ground pole supporting member. The support plate supporting member is arranged above the ground pole supporting member, is grounded, and is electrically insulated from the ground pole. The support plate is supported by the support plate supporting member, and is directly grounded through the support plate supporting plate. The heater is arranged between the support plate supporting member and the ground pole supporting member. The lower electrode mechanism has the advantages of simple ground current route and high repeatability, and solves the problem of imperfect earth of lower electrode. The invention also discloses plasma processing equipment comprising the lower electrode mechanism.

The invention relates to the technical field of high-voltage power systems, and particularly relates to a 220 kV porcelain jacket metal oxide arrester for a high-altitude power system. The 220 kV porcelain jacket metal oxide arrester comprises a grading ring, two arrester units, a metal backing plate and an insulating base, wherein the two arrester units are connected with each other in series by virtue of the metal backing plate, the grading ring is connected to the top end of the upper arrester unit, and a substrate is fixedly connected to the lower end of the lower arrester unit by virtue of the insulating base. According to the 220 kV porcelain jacket metal oxide arrester for the high-altitude power system, the structure is redesigned, and a reasonable internal resistor post and conductive rod support structure is adopted, so that potential distribution of the MOA for the high-altitude power system at a large creepage distance is effectively equalized, faults are avoided, and safe and stable operation of the high-altitude power system is obviously guaranteed.

To regularize a potential distribution of a grid, prevent local corrosion and prolong product lifetime, a storage battery grid includes frame skeleton (2) in a rectangular shape, a lug portion (21) formed upward from an upper side (2a) of the frame skeleton (2), one or more of main vertical skeletons (3X) extending downward from the lug portion (21) in the frame skeleton (2); and a plurality of diagonal skeletons (4) that branch from at least the main vertical skeletons (3X) extending to both sides with the main vertical skeletons (3X) as axes, and that extend diagonally from the upper side (2a) to the lower side (2b). The plurality of diagonal skeletons (4) are disposed at intervals in a direction of extension of the main vertical skeletons (3X), and at least partial of the plurality of spaces demarcated with the main vertical skeletons (3X) as a portion of the sides are in a substantially quadrilateral shape.

The invention discloses a trench terminal structure and a preparation method thereof. Trenches are annularly distributed on the periphery of an active region; a cut-off ring is arranged on the periphery of the trenches; the trenches comprise a plurality of discontinuous trenches and a continuous trench; the continuous trench is located between the discontinuous trenches and the cut-off ring; the cut-off ring is arranged between the discontinuous trenches and the cut-off ring; each discontinuous trench comprises a plurality of discontinuous sub-trenches arranged at equal intervals; and the discontinuous sub-trenches of the adjacent discontinuous grooves are distributed in a staggered mode. According to the trench terminal structure and preparation method thereof of the invention, the potential distribution at a terminal position is more uniform, the terminal width is reduced, and the device performance is improved.