4results about How to "Uniform potential distribution" patented technology

The present application relates to a kind of new near hemispherical probe and its preparation method, the near hemispherical probe can retain the excellent electrical characteristics of three-dimensional spherical structure, the area of collection electrode is small under the same electrode spacing, and the capacitance is low, and charge collection efficiency is almost independent of θ.Hemispherical electrode has good sealing, completely isolates detection sensitive area from substrate, dark current is not affected by wafer thickness, and extremely low noise is conducive to low-energy X-ray or low-energy particle detection.

The invention relates to an electric power system construction grounding device, and belongs to the technical field of grounding protection. The device comprises a bottom plate, handrails, a detection assembly and a grounding assembly, the handrails are arranged on the upper surface of the bottom plate at equal intervals, ground inserting columns are movably installed at the lower ends in the handrails, and a warning tape is installed between every two adjacent handrails. The detection assembly is arranged in the handrail and used for detecting the voltage of the ground position where the ground inserting column is located, and the grounding assembly is arranged on the upper surface of the bottom plate and located in the center of the range defined by the warning tape. The device further comprises a first winding assembly used for winding the warning tape, a second winding assembly used for winding the detection wire, a driving mechanism used for adjusting the position of the grounding electrode, and a clamping groove and a clamping hook used for fixing the handrail. The problems that in the prior art, a fence is inconvenient to carry, time and labor are wasted in arrangement, and potential detection is lacked are solved, and the construction efficiency and safety are improved.

The application discloses a high-mobility silicon carbide N-type LDMOS device with reduced on-resistance, which comprises an N-type substrate, a P-type epitaxial layer arranged on the N-type substrate, an N-type well region, a first P-type heavily doped region, a first N-type heavily doped region, a second P-type heavily doped region connected to a source, a second N-type heavily doped region connected to a drain arranged in the N-type well region, the first P-type heavily doped region, the first N-type heavily doped region and the second P-type heavily doped region being connected, an oxide layer arranged on the surface of the second N-type heavily doped region, the N-type well region, the first P-type heavily doped region, the first N-type heavily doped region, the second P-type heavily doped region and the P-type epitaxial layer, a polycrystalline silicon trench gate serving as a gate of the device and extending into the P-type epitaxial layer, and an N-type buried layer arranged in the P-type epitaxial layer, one end of the N-type buried layer being connected to a channel of the device and the other end being connected to the N-type well region.

The invention provides an aluminum alloy composite plate and a preparation method thereof. The aluminum alloy composite board comprises a core material layer and skin material layers arranged on the two opposite surfaces of the core material layer in a stacked mode. The core material layer comprises the following elements in percentage by mass: 0.2%-0.6% of Si, 0.3%-0.6% of Cu, 0.1%-0.3% of Mg, 0.2%-0.6% of Fe, 1.4%-1.8% of Mn, the sum of the mass content of Ti and the mass content of Zr is 0.15%-0.4%, and the balance is Al; each skin material layer comprises the following elements: 9.5 to 12.0 percent of Si, 0.6 to 1.0 percent of Fe, 1.4 to 1.8 percent of Mg, 0.05 to 0.25 percent of Zn, 0.08 to 0.2 percent of Bi and the balance of Al; the aluminum alloy composite board has good mechanical performance, sagging resistance and corrosion resistance, and therefore the requirement for long-term operation of the offshore wind driven generator is better met.