A Superjunction Taped Groove Transversal Voltage Sustainability Region with Resistive Field Plate

A technology of lateral withstand voltage and field plate, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of destroying the electric field distribution on the surface of the withstand voltage region, the advantages of super junction technology cannot be fully exerted, and the destruction of charge balance conditions, etc., to achieve Effect of high resistivity, good uniformity, optimized relationship
CN110212017BActive Publication Date: 2021-06-01UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2021-06-01

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Abstract

The invention belongs to the field of semiconductor power devices, relates to a lateral withstand voltage region, and specifically provides a super junction grooved lateral withstand voltage region with a resistive field plate, which is applied to junction edge terminals of semiconductor power devices or lateral semiconductor power devices including LDMOS ( Lateral Double‑Diffused MOSFET), LIGBT (Lateral Insulated Gate Bipolar Transistor). The present invention adjusts the surface electric field distribution in the reverse withstand voltage state by adding a resistive field plate between the insulating dielectric groove in the superjunction tape groove lateral withstand voltage region and the semiconductor drift region with a superjunction structure, making it more uniform , thus optimizing the relationship between breakdown voltage and specific on-resistance.
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Description

technical field

[0001] The invention belongs to the field of semiconductor power devices, and relates to a lateral voltage-resistant region, particularly a lateral voltage-resistant region with a groove structure; it can be applied to junction edge terminals of semiconductor power devices, or lateral semiconductor power devices include LDMOS (Lateral Double- Diffused MOSFET), LIGBT (Lateral Insulated Gate Bipolar Transistor), etc. Background technique

[0002] Lateral semiconductor power devices, such as LDMOS (Lateral Double-Diffused MOSFET, LDMOS), are widely used in power integrated circuits, but they usually require a long lateral withstand voltage region to withstand high reverse withstand voltage, occupying the chip The area is huge. For this reason, a kind of transverse pressure-resistant zone with grooved structure (herein referred to as "ordinary grooved transverse pressure-resistant zone") has been proposed, such as figure 1 As shown; the withstand voltage region...

Claims

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