Super-junction lateral voltage withstanding region with groove and having impedance field plate

A lateral withstand voltage, field plate technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of destroying the charge balance condition, the advantages of superjunction technology cannot be fully exerted, and destroying the surface electric field distribution in the withstand voltage region. The effect of optimizing breakdown voltage and specific on-resistance, device width reduction, and high resistivity
CN110212017AActive Publication Date: 2019-09-06UNIV OF ELECTRONICS SCI & TECH OF CHINA
7 Cites 2 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2019-09-06

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention belongs to the field of a semiconductor power device, relates to a lateral voltage withstanding region and specifically provides a super-junction lateral voltage withstanding region witha groove and having an impedance field plate. A junction edge terminal or a lateral semiconductor power device applied to a semiconductor power device comprises an LDMOS (Lateral Double-Diffused MOSFET) and an LIGBT (Lateral Insulated Gate Bipolar Transistor). The impedance field plate is added between the insulation medium groove in the super-junction lateral voltage withstanding region with thegroove and a semiconductor drift region having a super-junction structure to modulate surface electric field distribution under a reverse withstand voltage state to make the electric field more uniform, thereby optimizing the relationship between breakdown voltage and specific on-resistance.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the field of semiconductor power devices, and relates to a lateral voltage-resistant region, particularly a lateral voltage-resistant region with a groove structure; it can be applied to junction edge terminals of semiconductor power devices, or lateral semiconductor power devices include LDMOS (Lateral Double- Diffused MOSFET), LIGBT (Lateral Insulated Gate Bipolar Transistor), etc. Background technique

[0002] Lateral semiconductor power devices, such as LDMOS (Lateral Double-Diffused MOSFET, LDMOS), are widely used in power integrated circuits, but they usually require a long lateral withstand voltage region to withstand high reverse withstand voltage, occupying the chip The area is huge. For this reason, a kind of transverse pressure-resistant zone with grooved structure (herein referred to as "ordinary grooved transverse pressure-resistant zone") has been proposed, such as figure 1 As shown; the withstand voltage region...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More