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Tin-based perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of difficult to realize tin-based perovskite solar cells, reduce device performance, hinder carrier transport, etc., and achieve enhanced The effect of improved carrier transport capacity, efficiency and stability, and improved interfacial band structure

Active Publication Date: 2022-03-04
SICHUAN UNIV
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Problems solved by technology

However, when the orientation of perovskite crystals is perpendicular to the direction of carrier transport, large cations will hinder carrier transport; when low-dimensional perovskite distribution is uneven, the formation of unfavorable quantum well effects will degrade device performance , it is difficult to realize tin-based perovskite solar cells with high efficiency and high stability

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  • Tin-based perovskite solar cell and preparation method thereof
  • Tin-based perovskite solar cell and preparation method thereof
  • Tin-based perovskite solar cell and preparation method thereof

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preparation example Construction

[0048] The present invention also provides a preparation method of a tin-based perovskite solar cell, comprising the following steps:

[0049] 1) Depositing a transparent conductive film on the substrate;

[0050] 2) coating the hole transport material on the transparent conductive film, and then performing annealing treatment to form a hole transport layer on the transparent conductive film;

[0051] 3) Under a protective atmosphere, coat the tin-based perovskite precursor solution on the hole transport layer, add anti-solvent dropwise at the 10th to 20th s of spin coating, and then perform annealing treatment to form on the hole transport layer Tin-based perovskite film absorber layer;

[0052] 4) Depositing an electron transport layer on the tin-based perovskite film absorber layer;

[0053] 5) depositing a hole blocking layer on the electron transport layer;

[0054] 6) Depositing a metal thin film on the hole blocking layer as a metal electrode layer.

[0055] In the pr...

Embodiment 1

[0062] Step 1): Deposit indium tin oxide on a glass substrate to form an indium tin oxide transparent conductive film substrate, then place it on a polytetrafluoroethylene sample shelf, and wash it in deionized water, glass cleaning agent (Germany) successively. III), deionized water, acetone, and dehydrated ethanol were ultrasonicated for 15 minutes, and then the cleaned indium tin oxide transparent conductive film substrate was soaked in a beaker of deionized ethanol, and sealed with tinfoil for airtight storage.

[0063] Step 2): phenethylamine bromide, ethylenediamine iodine, stannous fluoride, germanium iodide, formamidine iodine and stannous iodide are mixed according to the molar ratio of 0.01:0.01:0.10:0.05:0.98:1.00, It is dissolved in N,N-dimethylformamide and dimethyl sulfoxide solvent with a volume ratio of 4:1, wherein the molar concentration of phenethylamine bromide is 1%.

[0064] Phenylethylamine bromide is an additive (manufacturer: Youyou Technology, articl...

Embodiment 2

[0071] Step 1): Deposit indium tin oxide on a glass substrate to form an indium tin oxide transparent conductive film substrate, then place it on a polytetrafluoroethylene sample shelf, and wash it in deionized water, glass cleaning agent (Germany) successively. III), deionized water, acetone, and dehydrated ethanol were ultrasonicated for 15 minutes, and then the cleaned indium tin oxide transparent conductive film substrate was soaked in a beaker of deionized ethanol, and sealed with tinfoil for airtight storage.

[0072] Step 2): phenethylamine bromide, ethylenediamine iodine, stannous fluoride, germanium iodide, formamidine iodine and stannous iodide are mixed according to the molar ratio of 0.05:0.01:0.10:0.05:0.98:1.00, It is dissolved in N,N-dimethylformamide and dimethyl sulfoxide solvent with a volume ratio of 1:1, wherein the molar concentration of phenethylamine bromide is 5%.

[0073] Step 3): The indium tin oxide transparent conductive thin film substrate is blow...

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Abstract

The invention belongs to the technical field of novel thin film solar cell preparation, and particularly discloses a tin-based perovskite solar cell and a preparation method thereof. According to the method, phenylethylamine bromide is added into a tin-based perovskite precursor solution, and the tin-based perovskite thin film is prepared by adopting one-step spin coating. The additive is helpful for improving the crystallization quality of the film, improving the morphology, reducing the internal defect mode and reducing non-radiative recombination. In addition, a matching energy band structure formed by the absorption layer prepared by the technology and the charge transport layer enhances the carrier transport capability. The photoelectric conversion efficiency of the corresponding tin-based perovskite solar cell device reaches 14.65%, and the photoelectric conversion efficiency of the tin-based perovskite solar cell device is still kept above 90% of the initial value after the tin-based perovskite solar cell device is placed for 4800 hours. The data show that the addition of the phenethylamine bromide in the precursor solution is a preparation method for effectively improving the photoelectric conversion efficiency and the stability of the tin-based perovskite battery.

Description

technical field [0001] The invention relates to the technical field of preparation of novel thin-film solar cells, in particular to a tin-based perovskite solar cell and a preparation method thereof. Background technique [0002] At present, most of the light absorbers of high-efficiency perovskite solar cells contain heavy metal lead. The toxicity of lead and the harm to the environment limit the development of perovskite solar cells. Tin-based perovskite materials have high absorption coefficient and carrier mobility, and their bandgap width matches the solar spectrum better, making them ideal substitutes for lead-based perovskite materials. However, the efficiency of tin-based perovskite batteries is much lower than that of lead-based perovskite batteries due to problems such as easy oxidation of divalent tin, many defects, and mismatched energy levels. [0003] At present, the mainstream technical means to optimize the performance of tin-based perovskite solar cells inc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/12H10K85/00H10K30/00H10K30/88Y02E10/549
Inventor 任胜强赵德威郝霞武莉莉张静全
Owner SICHUAN UNIV
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