The invention discloses a pinch-off
voltage reducing structure of a dual-channel
high voltage junction
field effect transistor (FET) and a manufacturing method of the pinch-off
voltage reducing structure of the dual-channel
high voltage junction FET. A well region provided with a channel region and a drift region is formed in a
silicon substrate, a drift region inversion layer is arranged in the drift region, a gate region is formed on the outer side of the channel region, a channel region inversion layer is arranged in the channel region, the transverse width of the channel region inversion layer is longer than the transverse width of the channel region, and two ends of the channel region inversion layer are connected with the gate region. A drain
electrode leading-out terminal is formed in the drift region, a source
electrode leading-out terminal is formed in the channel region, a gate
electrode leading-out terminal is formed in the gate region, and a substrate leading-out terminal is formed in the substrate region. The drift region, the drain electrode leading-out terminal and the source electrode leading-out terminal are in a second
conductivity type, the substrate, the drift region inversion layer, the channel region inversion layer, the gate region, the gate leading-out terminal and the substrate leading-out terminal are in a first
conductivity type, and electrodes are led out from the leading-out terminals. According to the pinch-off
voltage reducing structure of the dual-channel
high voltage junction FET and the manufacturing method of the pinch-off voltage reducing structure of the dual-channel high voltage junction FET, impurities which are opposite in type are implanted inside the channel region to form double channels, namely an upper channel and a lower channel, the opposite impurities are arranged in the channel region at the same time, and therefore each channel can be exhausted more easily, and pinch-off voltage is lowered.