Jfet device and its manufacturing method
A device, deep well technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased process complexity, high pinch-off voltage, inconvenient adjustment of pinch-off voltage, etc., to achieve low pinch-off voltage, lower doping concentration, easy depletion effect
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[0038] like figure 2 As shown, it is a cross-sectional view of a JFET device in an embodiment of the present invention before pushing the well; as image 3 As shown, it is a cross-sectional view of a JFET device in Embodiment 1 of the present invention after well pushing; the JFET device in Embodiment 1 of the present invention includes a drift region 1 and a body region 2, and the drift region 1 and the body region 2 are in lateral contact.
[0039] The drift region 1 is composed of a first deep well region 4a doped with a second conductivity type doped on a substrate 3 doped with a first conductivity type; the drain region 6b is formed at the first deep well region 4a The second conductivity type heavily doped region in the selected region; the drain D is drawn out through the contact hole 11 and the metal layer 12 at the top of the drain region 6b.
[0040] The body region 2 includes a second deep well region 4b doped with the second conductivity type and a channel region...
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