Method for producing AlGaN/AlInN composite potential barrier gallium nitride field effect pipe
A compound barrier and gallium nitride field technology, applied in the field of semiconductor devices, can solve problems such as difficulty in forming electron gas density and failure to manufacture high-power field effect transistors, so as to suppress current collapse and solve short channel effects , Improve the effect of electron gas density
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Embodiment 1
[0019] Select low aluminum (Al) composition ratio alloy Al 0.04 Ga 0.96 N is the buffer layer 11, grow 15nm undoped GaN as channel layer 12, and then grow 2nm undoped AlN isolation layer 13 and 4nm undoped Al on it 0.83 In 0.17 N lower barrier layer 14, finally covered with 6nm undoped Al 0.3 Ga 0.7 N upper barrier layer 15 . Self-consistently solving the Schrödinger equation and Poisson equation, the channel electron gas density is 15.29×10 12 cm -2 , the pinch-off voltage is -4V. When the thinned Al 0.3 Ga 0.7 When the barrier layer on N is 2nm, the calculated electron gas density is 1.696×10 13 cm -2 . After making the ohmic electrode through the superalloy, the Al formed under the source electrode 17 and the drain electrode 18 0.83 In 0.17 The N / AlN / GaN heterojunction electron gas density is as high as 2.96×10 13 m -2 . Greatly reduced ohmic contact resistance.
Embodiment 2
[0020] Embodiment 2: choose low aluminum (Al) composition ratio alloy Al 0.04 Ga 0.96N is the buffer layer 11, grow 15nm undoped GaN as channel layer 12, and then grow 2nm undoped AlN isolation layer 13 and 4nm undoped Al on it 0.83 In 0.17 The lower N barrier layer 14 finally covers the upper barrier layer 15 of 6nm undoped GaN. Self-consistently solving the Schrödinger equation and Poisson equation, the channel electron gas density is 9.097×10 12 m -2 , the pinch-off voltage is -2.8V. When the thinned GaN upper barrier layer is 2nm, the calculated electron gas density is 13.645×10 12 cm -2 . Thinning the barrier increases the electron gas density by 4.55×10 12 cm -2 , significantly weakening the strong field peak in the channel. After making the ohmic electrode through the superalloy, the Al formed under the source electrode 17 and the drain electrode 18 0.83 In 0.17 The N / AlN / GaN heterojunction electron gas density is as high as 2.96×10 13 cm -2 . Greatly red...
Embodiment 3
[0021] Embodiment 3: choose low aluminum (Al) composition ratio alloy Al 0.04 Ga 0.96 N is the buffer layer 11, grow 15nm undoped GaN as channel layer 12, and then grow 2nm undoped AlN isolation layer 13 and 4nm undoped Al on it 0.83 In 0.17 N lower barrier layer 14, finally covered with 5nm undoped Al 0.1 Ga 0.9 N upper barrier layer 15 . Self-consistently solving the Schrödinger equation and Poisson equation, the channel electron gas density is 11.56×10 12 cm -2 , the pinch-off voltage is -2.8V. When the thinned Al 0.1 Ga 0.9 When the barrier layer on N is 2nm, the calculated electron gas density is 1.457×10 13 cm -2 . Thinning the potential barrier increases the electron gas density by 3.01×10 12 m -2 , significantly weakening the strong field peak in the channel. After making the ohmic electrode through the superalloy, the Al formed under the source electrode 17 and the drain electrode 18 0.83 In 0.17 The N / AlN / GaN heterojunction electron gas density is as ...
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