1results about How to "Avoid short channel effects" patented technology

The application provides an insulated gate bipolar transistor and a preparation method thereof. The preparation method comprises the following steps: providing a semiconductor layer comprising a substrate, a cell region, a transition region and a terminal region; performing ion implantation of a second conductive type in the cell region to form a first body region; forming a plurality of interval arranged groove structures in the cell region; forming a shielding layer on the upper surface of the semiconductor layer to expose the cell region, and forming an emitter region and a second body region based on the shielding layer, the bottom surface of the second body region is below the first body region, the upper surface of the second body region is in the first body region, the first body region and the second body region form a body region, and rapid annealing is performed on the second body region and the emitter region. The body region is formed by twice ion implantation of low energy and high energy, so that the concentration peak of the doping particles is located in the body region, the threshold voltage consistency of the device is ensured, rapid annealing is performed on the second body region and the emitter region, and the influence of thermal stress on the device is reduced.