CMOS transistor inverter with multiple grid transistor

Abstract

The CMOS transistor inverter includes at least one first multiple grid transistor, which includes one first source connected to the first power source, the first drain connected to the output end and the first grid; at least one second multiple grid transistor, which includes the second source connected to ground, the second drain connected to the output end and the second grid; and one input end contained to the first grid and the second grid.

Description

technical field [0001] The present invention relates to a silicon on insulator (SOI) circuit, and more particularly to a CMOS transistor inverter using a multi-gate transistor. Background technique [0002] Metal-oxide-semiconductor field effect transistor (MOSFET) technology is the most important semiconductor technology in the production of ultra-large scale integrated circuits (ultra-large scale integrated, ULSI). Over the past few years, reductions in the size of MOSFETs have provided continuous improvements in speed performance, circuit density, and cost per unit function. As the gate length of conventional MOSFETs becomes smaller and smaller, the interaction between the source and drain and the channel and gate will increase, thus affecting the channel potential. Therefore, a MOSFET with a short gate length has the problem that the gate cannot actually control the channel on and off. This weakening of MOSFET gate control is known as short-channel effects. Generally ...

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Problems solved by technology

However, in terms of circuit optimization, an inverter circuit using only multi-gate MOSFETs has not been proposed so far.

But it is quite difficult to find a simple way to provide the best P / N width ratio for inverters with multi-gate MOSFETs

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