Structure and manufacturing method of dual-channel high-voltage junction field effect transistor for reducing pinch-off voltage
A field effect transistor and pinch-off voltage technology, which is applied in the field of semiconductor integrated circuits, can solve the problem of high pinch-off voltage, and achieve the effect of reducing the pinch-off voltage and easy depletion.
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[0022] The double-channel high-voltage junction field effect transistor of the present invention reduces the structure of the pinch-off voltage, such as figure 2 As shown, a well region 102 having a second conductivity type opposite to the first conductivity type is formed on a silicon substrate 101 having a first conductivity type, and the well region 102 has a drift region 103 and a body region 104, wherein The drift region 103 is used for high voltage resistance, and the body region 104 is the channel region of the JFET. A drift region inversion layer 105 having a first conductivity type is formed in the drift region 103 , and an isolation structure 106 is formed above one end of the drift region inversion layer 105 . A gate region 107 of the first conductivity type is formed outside the channel region 104, and a channel region inversion layer 108 of the first conductivity type is formed in the channel region 104, such as image 3 , Figure 4 As shown, the channel region...
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