High voltage JFET device and processing method of the same
A process method and device technology, applied in the field of high-voltage JFET devices, can solve problems such as concentration reduction, achieve the effects of reducing pinch-off voltage, increasing breakdown voltage, and simple implementation
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[0026] High voltage JFET device described in the present invention, such as Figure 8 As shown, there is an N-type deep well 102 in the P-type substrate 101. From the cross-sectional perspective, the field oxygen 103 is above the N-type deep well 102, and the two ends of the field oxygen 103 are the source region 107b and the drain region of the JFET respectively. 107 a , the field oxygen 103 covers the polysilicon field plate 106 .
[0027] The N-type deep well 102 is divided into two sections, the first N-type deep well and the second N-type deep well, such as Figure 8 As shown in , the first N-type deep well 102 on the left side includes the source region 107b of the JFET, and the second N-type deep well 102 on the right side includes the drain region 107a of the JFET and the P-type injection layer 105b; the first The N-type deep well and the second N-type deep well are independent of each other, with a certain distance between them, generally 2-6 μm, and the distance can...
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