Organic thin-film transistor and manufacturing method thereof
A technology of organic thin film and transistor, applied in the field of organic thin film transistor and its preparation, to achieve the effect of improving injection and transmission, easy operation, and reasonable and simple preparation method
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Embodiment 1
[0058] The substrate of the device is Si, the gate is Au, the insulating layer is PVP, the transition layer is PS:TPD, the organic semiconductor layer is pentacene, and the source and drain electrodes are Au.
[0059] The preparation method is as follows:
[0060] ① Thoroughly clean the Si substrate first, and blow dry with dry nitrogen after cleaning;
[0061] ② Evaporate gate electrode Au on the surface of the Si substrate by vacuum evaporation or sputtering;
[0062] ③ Etching the pattern of the gate electrode by photolithography;
[0063] ④ On the other side of the Si plate coated with the gate electrode, the organic insulating layer PVP is spin-coated by spin coating. The organic insulating layer PVP can be spin-coated into a film at one time, or it can be spin-coated on the Si substrate multiple times;
[0064] ⑤ heating and baking the spin-coated organic insulating layer PVP;
[0065] ⑥ Spin-coat the transition layer PS:TPD on the Si substrate covered with the organi...
Embodiment 2
[0069] The substrate of the device is Si, the gate is Au, the insulating layer is PVP, the transition layer is PS:NPB, the organic semiconductor layer is pentacene, and the source and drain electrodes are Au.
[0070] The fabrication process of the device is similar to that of Example 1.
[0071] Example 3
Embodiment 3
[0073] The substrate of the device is Si, the gate is Au, the insulating layer is PVP, the transition layer is CuPc, the organic semiconductor layer is pentacene, and the source and drain electrodes are Au.
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