Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of power semiconductor devices, can solve problems such as low breakdown voltage and low constant current value, achieve high withstand voltage, improve dynamic impedance value, and excellent constant current characteristics

CN110534581AActive Publication Date: 2019-12-03UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2019-12-03

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Abstract

The invention provides a semiconductor device and a manufacturing method thereof, and belongs to the technical field of power semiconductors. The semiconductor device is formed by multiple interdigitally connected cells with the same structure / The cell structure comprises a second conductivity type light doped substrate, a first conductivity type light doped epitaxial layer, a diffusion second conductivity type well region, a first and third heavily doped regions having the first conductivity type, a second heavily doped region having the second conductivity type, a depletion type channel region, an oxide medium layer, a metal cathode, a metal anode and a back metal electrode. The forward withstand voltage and constant current characteristics of the device are optimally designed through the form of a metal field plate and injection of the second conductivity type doped region; the used second conductivity type light doped substrate has the effect of assisting the depletion of the first conductivity type light doped epitaxial layer and the conductive channel so as to improve the withstand voltage of the device and reduce the pinch-off voltage and realize better constant current capability and higher breakdown voltage; and finally the designed withstand voltage of the device is 460V and the pinch-off voltage is below 4V.
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Description

technical field

[0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a semiconductor device and a manufacturing method thereof. Background technique

[0002] Constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is usually used to protect the entire circuit, even if the voltage is unstable or the load resistance value changes greatly in the circuit, it can still ensure the stability of the supply current of the entire circuit. Constant Regulating Diode (CRD, Constant Regulating Diode) is a commonly used semiconductor constant current device. The diode is used as a constant current source instead of an ordinary constant current source composed of multiple electronic components such as transistors, Zener tubes, and resistors to realize the circuit structure. Simplicity and miniaturization. At present, the output current o...

Examples

Embodiment Construction

[0044] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0045] As shown in Figure 1(a), a semiconductor device provided by the first embodiment of the present invention is formed by connecting multiple cells with the same structure in an interdigitated manner, and the cell structure includes a second conductivity type lightly doped Substrate 1, first conductivity type lightly doped epitaxial layer 2, oxide medium layer 10, metal cathode 11, metal anode 12 and back metal electrode 13; the first conductivity type lightly doped epitaxial layer 2 has diffused second conductivity type The well region 3, the first conductivity type depletion channel region 8, the first heavily doped region 5, the second heavily doped region 6 and the third heavily doped region 7, the first heavil...