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A lateral constant current diode

A constant current diode, horizontal technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low breakdown voltage, low constant current, etc., and achieve the effect of increasing breakdown voltage, increasing constant current, and easy pinch-off

Inactive Publication Date: 2016-01-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to propose a new lateral constant current diode for the current constant current diode with low breakdown voltage and low constant current.

Method used

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  • A lateral constant current diode
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Examples

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Embodiment 1

[0033] Such as figure 1 As shown, this example includes a P-type substrate 9, a metalized cathode 1, a metalized anode 11, a first P-type heavily doped region 3 and an N-type well region 8, wherein the first P-type heavily doped region 3 and The N-type well region 8 is respectively arranged between the metallized cathode 1 and the P-type substrate 9 and connected with the metallized cathode 1 and the P-type substrate 9, and the N-type well region 8 includes the first N-type heavily doped region 4, The second P-type heavily doped region 5, the P-type lightly doped region 6 and the second N-type heavily doped region 7, the P-type lightly doped region 6 and the second P-type heavily doped region 5 are connected to form a P-type well region, and the P-type lightly doped region 6 is set on the side of the second P-type heavily doped region 5 close to the second N-type heavily doped region 7, and the metallized cathode 1 covers the first P-type heavily doped region 3 , the top of t...

Embodiment 2

[0039] Such as Figure 4 As shown, in this example, the cathode field plate 12 and the anode field plate 13 are added on the basis of the embodiment 1. The addition of the cathode field plate 12 and the anode field plate 13 can further improve the withstand voltage of the device, and can be based on the actual withstand voltage The lengths of the cathode field plate 12 and the anode field plate 13 need to be adjusted.

Embodiment 3

[0041] This example is a lateral constant current diode with an N-type buffer, such as Figure 5 As shown, specifically, on the basis of Embodiment 1, a buffer layer 10 is added, the buffer layer 10 is arranged between the second N-type heavily doped region 7 and the N-type well region 8, and the concentration of the buffer layer 10 is at the second The doping concentration between the N-type heavily doped region 7 and the N-type well region 8 is used to buffer between the second N-type heavily doped region 7 and the N-type well region 8 to reduce electric field spikes.

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Abstract

The invention relates to semiconductor technology, in particular to a lateral constant current diode. In the lateral constant current diode described in the present invention, a lightly doped P-type region and a heavily doped P-type region are introduced into the N-type well region to form a P-type well region, thereby modulating the surface electric field, increasing the breakdown voltage, and lightening The doped P-type region can assist in depleting the N-type well region, making the channel easier to pinch off and quickly enter the constant current region, so that the constant current diode has a lower pinch-off voltage, and the deeper heavily doped P-type region shortens the The channel length improves the constant current of the constant current diode. The beneficial effect of the present invention is that the breakdown voltage of the lateral constant current diode can be effectively improved, and at the same time, the channel can be more easily pinched off, and can quickly enter the constant current region, so that the lateral constant current diode has a lower pinch-off voltage, and the lateral constant current diode can be effectively improved. The constant current of the constant current diode. The invention is especially suitable for lateral constant current diodes.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a lateral constant current diode. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. Constant current diodes CRD (Current Regulator Diodes), that is, use diodes as constant current sources to replace ordinary constant current sources composed of multiple components such as transistors, Zener tubes and resistors. At present, the output current of constant current diodes ranges from several milliamperes to Between ten milliamperes, it can directly drive the load, which realizes the purpose of simplifying the circuit structure, reducing the volume and improving the reliability of the device. In ad...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06
Inventor 乔明许琬章文通李燕妃何逸涛张昕张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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