76results about How to "Change the electric field distribution" patented technology

The invention provides an auxiliary anode mask micro electrolytic machining array micro-pit system and method, and belongs to the technical field of micro electrolytic machining. The system comprises an upper clamp (1), a lower clamp (7), a tool cathode (2) which is arranged on the upper clamp (1), a tool anode (6) which is arranged on the lower clamp (7), mask plates (5) which are arranged on the surface of the tool anode (6) and of group drilling structures, and auxiliary anodes (4) which are fixed on the lower clamp (7) and surround edges of the tool anode (6); an electrolyte flow pass is formed between the tool cathode (2) and the tool anode (6), and the system further comprises a main power supply (9) and an auxiliary power supply (8), wherein the positive pole of the main power supply (9) and the positive pole of the auxiliary power supple (8) are connected with the tool anode (6) and the auxiliary anode (4) respectively, and the negative pole of the main power supply (9) and the negative pole of the auxiliary power supple (8) are both connected with the tool cathode (2). The auxiliary anode mask micro electrolytic machining array micro-pit system and a method are characterized in that an auxiliary power supply voltage is smaller than a main power supply voltage, and a potential difference exists between the auxiliary power supply voltage and the main power supply voltage, so that the electric current density in all mask holes of the work piece surface is consistent, and the dimensional homogeneity of array micro-pits is improved.

The invention relates to a capacity compensation circuit for the sectional series connection of a transformer, belonging to the field of transformers or electric energy conversion. The compensation winding to be connected in series of the transformer consists of a plurality of winding sections by series connection, and a compensating capacitor is connected in series between at least one pair of adjacent winding sections; and the compensation winding to be connected in series of the transformer is a primary side or/and an auxiliary side of the transformer. The circuit can be applied to various resonance converters, and can be used in the leakage inductance and the exciting inductance of a compensating non-contact transformer in a non-contact resonance converter.

The invention provides an array substrate, a preparation method and an application thereof and a performance improvement method. The array substrate comprises a substrate, a shielding layer, a thin film transistor and a compensation layer, wherein the shielding layer is arranged on one surface of the substrate; the thin film transistor is arranged on the substrate and covers the shielding layer; and the compensation layer is arranged on one side, far from the substrate, of the thin film transistor and used for forming a second electric field in an active layer of the thin film transistor. Therefore, by changing the electric field distribution in the active layer of the thin film transistor, influence of the first electric field to the characteristic of the thin film transistor can be compensated, so that a technical effect of improving or eliminating an abnormal phenomenon of output characteristic curved saturation region warping can be realized, and current normal output can be ensured; and meanwhile, the adverse influence caused by change of a threshold voltage of the thin film transistor due to the first electric field can be improved and compensated, the problem of threshold voltage drifting and the like can be solved, and the thin film transistor can recover to the working state when the active layer is not influenced by the first electric field, and even a higher level.

The invention discloses a electrodeposition craft controlling device, which is characterized by the following: settling loading trough and conditioning tank in container; connecting with control board main units circuit; separating the loading trough to several station with frame; setting anode support and negative pole rotating device on each station; connecting the loading trough with groove outer filter and measuring pump through conduit line; connecting conditioning tank with measuring pump; connecting the control board main units with part circuit of temperature controller, acidness controller, master salt control, sedimentary deposit thickness control, negative pole rotating control, cycle filtering control through communication bus; adopting supplementary negative pole technology to negative rotating device; changing electric field distribution in the electrolytic solution. This device increases availability, which can be produced with large scale.

The invention discloses a depletion AlGaN/GaN MISHEMT high voltage device and a manufacturing method thereof. The device sequentially comprises a substrate, a GaN buffer layer, an intrinsic AlGaN (or GaN) channel layer, an AlN isolated layer and an AlGaN barrier layer from bottom to top; the AlGaN barrier layer is provided with a source, a grid and a drain, and an insulating medium layer is arranged between the grid and the AlGaN barrier layer; a linear AlGaN layer, a P-type GaN (or InGaN) epitaxial layer and a base are sequentially extended on the AlGaN barrier layer between the grid and the drain. The depletion AlGaN/GaN MISHEMT high voltage device and the manufacturing method have the advantages that when the device is switched on, the concentration of 2-dimensional electron gas in a first area and a second area between the grid and the drain is increased, and resistance is reduced; when the device is switched off, the concentration of the 2-dimensional electron gas in the first area is reduced, the concentration of the 2-dimensional electron gas in the second area is the same as that when the device is switched on, the width of a depletion area of the device is increased, electric field distribution is changed, and the breakdown voltage of the device is improved; an insulated gate structure prevents the grid from leaking current, and the performance of the device is improved.

The invention relates to a differential feed directional diagram reconfigurable dielectric patch antenna, which comprises a lower dielectric substrate, a metal reflection floor, an upper dielectric substrate and a dielectric patch which are sequentially stacked from bottom to top, and is characterized in that the metal reflection floor is provided with three parallel coupling gaps which are positioned right below the dielectric patch; each coupling slot is loaded with a PIN diode, and the lower layer of the lower dielectric substrate is provided with a microstrip feed line orthogonal to the coupling slots, and the microstrip feed line is used for receiving constant-amplitude and reverse-phase radio frequency signals to achieve differential feed. The feed structure of the antenna is controlled by switching the on-off state of the PIN diode, and the electric field distribution of the high-order mode TE12 can be effectively changed. Therefore, under the condition that the size of the antenna is not increased, five different wave beams can be obtained only by using three PIN diodes, and the five PIN diodes have good radiation performance.

The invention relates to a millimeter wave antenna module and an electronic device. The millimeter wave antenna module comprises a dielectric substrate, a grounding plate, a radiation patch, a feed structure and a conductor structure. The radiation patch generates a first current of the surface through feeding of the feeding structure, and meanwhile, coupled feeding excitation between the conductor structure and the radiation patch generates a second current perpendicular to the plane where the radiation patch is located. According to the millimeter wave antenna module, a capacitive loading conductor structure is introduced, so that the module has a relatively small size, and thinning of the antenna module is realized, and due to the first current and the second current, the electric fielddistribution of the module is changed, so that the module has a relatively wide beam width, a monopole mode of the feed structure is suppressed, and a differential mode of the radiation patch is enhanced, thereby suppressing a cross polarization component and increasing the isolation of a dual polarization port.

The invention discloses a composite drain-based AlGaN/GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) high-voltage device and a fabrication method thereof. The structure of the device comprises a substrate, a GaN buffer layer, an intrinsic GaN channel layer, an AlN isolating layer and an AlGaN barrier layer sequentially from the bottom up, a source, a grid and a composite drain are arranged on the AlGaN barrier layer, and an insulating medium layer is arranged between the grid and the AlGaN barrier layer; a linear AlGaN layer, a P-type GaN epitaxial layer and a base are sequentially epitaxially arranged on the top of the AlGaN barrier layer between the grid and the composite drain. The invention has the advantages that: when the device is switched on, the 2DEG (2-dimensional electron gas) concentration of a first region and a second region between the grid and the drain increases, and the resistance decreases; when the device is switched off, the 2DEG of the first region is reduced, the 2DEG of the second region is the same as when the device is switched on, the width of the depletion region of the device is increased, the distribution of an electric field is changed, and the breakdown voltage of the device is increased; the composite grid structure prevents the electric field peak from appearing at the edge of the drain, thus increasing the breakdown voltage of the device; an insulated grid structure prevents grid leakage current, and thereby the performance of the device is enhanced.

The invention discloses a compact low-coupling extensible MIMO antenna based on an orthogonal mode, which comprises a microstrip line feed port, a coaxial line feed port, a grounding metal plate, a metal microstrip feed line, a dielectric plate and a rectangular radiation metal patch, wherein the dielectric plate is arranged above the grounding metal plate, and the rectangular radiation metal patch is attached to the dielectric plate; the rectangular radiation metal patch is connected to the microstrip line feed port through a metal microstrip feed line, and the rectangular radiation metal patch is connected to the coaxial line feed port through a coaxial probe. The invention further discloses a compact low-coupling extensible MIMO antenna system based on the orthogonal mode. The two excitation ports are utilized to excite the radiator at different positions to obtain two radiation modes with orthogonality so as to obtain a low coupling characteristic; and the antenna unit can be expanded into a compact low-coupling antenna array with any number of ports.

The invention discloses a groove charge compensation Schottky semiconductor device which is provided with a charge compensation structure. When the semiconductor device is connected with certain back bias voltage, a first conducting semiconductor material and a second conducting semiconductor material can form charge compensation and the back blocking property of a device is improved. A polycrystal semiconductor material is led into the upper portion of the groove so that strength of a peak electric field of Schottky junction surface can be reduced when the semiconductor device is connected with the back bias voltage and the back blocking property of the device is further improved. The invention further provides a manufacturing method of the groove charge compensation Schottky semiconductor device.

The invention relates to an MOSFET device with a silicon carbide inverted T-shaped marking layer structure and a preparation method thereof. The MOSFET device comprises a gate dielectric layer, a base region, a masking layer, a drift layer, a substrate layer, a drain electrode, a polycrystalline silicon layer, a grid electrode, a first source region, a second source region and a source electrode, wherein the base region is located at two sides of the gate dielectric layer; the masking layer is located on the lower surface of the gate dielectric layer; the drift layer is located on the lower surfaces of the base region and the masking layer; the substrate layer is located on the lower surface of the drift layer; the drain electrode is located on the surface of the substrate layer; the polycrystalline silicon layer is located on the inner surface of the gate dielectric layer; the grid electrode is located on the upper surface of the polycrystalline silicon layer; the first source region is located on the upper surface of a part of the base region; the second source region is located on the upper surface of the rest of the base region; and the source electrode is located on the upper surfaces of the first source region and the second source region. According to the MOSFET device, the electric field distribution at the corner of the gate dielectric layer is changed through the P+ type masking layer at the bottom of the trench gate, the electric field concentration at the corner of the device is reduced, the breakdown voltage of the device is improved, and the reliability of the device is improved.

The invention relates to an enhanced HEMT radio frequency device with a gate-drain composite step field plate structure, and a preparation method thereof. A p-GaN region is arranged on the surface of a barrier layer, a gate is arranged on the p-GaN region, a gate step field plate is arranged on the side wall, facing a drain, of the p-GaN region, and a drain step field plate is arranged on the side wall, facing the p-type GaN region, of the drain. The step field plate comprises at least two sub-field plates, and the width of each sub-field plate is gradually reduced from top to bottom. Through the arrangement of the gate-drain composite step field plate, the electric field distribution of the side, close to the drain, of the gate and the electric field distribution of the side, close to the gate, of the drain are changed, the average electric field intensity between the gate and the drain is improved, and the voltage withstanding performance and reliability of the device are improved; and the p-GaN region is arranged below the gate, and the enhanced HEMT radio frequency device has smaller gate-drain capacitance and shows higher cut-off frequency in combination with the gate-drain composite step field plate structure.

The invention relates to a field stop type insulated gate bipolar transistor and a manufacturing method of the field stop type insulated gate bipolar transistor. The manufacturing method of the field stop type insulated gate bipolar transistor sequentially comprises the following steps of (1) forming a buffer layer, wherein an N+ buffer layer is formed on the obverse side of a wafer; (2) forming an N-type device layer, wherein the N-type device layer is formed on the N+ buffer layer through epitaxial growth; (3) forming an IGBT structure, wherein an obverse side structure of the IGBT is formed on the N-type device layer; (4) forming a collector, wherein the collector is formed on the reverse side of the wafer. According to the manufacturing method of the field stop type insulated gate bipolar transistor, the ultra-thin field stop type insulated gate bipolar transistor can be manufactured without sheet processing equipment, the manufacturing method of the field stop type insulated gate bipolar transistor has the advantages of being simple in technology, high in efficiency and low in cost, and the field stop type insulated gate bipolar transistor manufactured through the manufacturing method of the field stop type insulated gate bipolar transistor has the lower conduction voltage drop and the lower application temperature.

The invention discloses an AlGaN/GaN high-voltage device based on a super junction leakage field plate and a manufacturing method thereof. The high-voltage device structurally comprises a substrate, a GaN buffer layer, an intrinsic GaN (or AlGaN) channel layer, an A1N isolation layer and an A1GaN barrier layer from bottom to top. A source electrode, a grid electrode and a composite drain electrode are arranged on the A1GaN barrier layer. The composite drain electrode comprises a drain electrode and a drain electrode field plate. A linear A1GaN layer, a grid source field plate, a P-type GaN (or InGaN) layer and a base electrode are arranged between grid sources and between the grid leaks. The AlGaN/GaN high-voltage device based on the super junction leakage field plate has the advantages that the 2DEG concentration of a first area, the 2DEG concentration of a second area, and the 2DEG concentration of a third area are increased at the device breakover time, so that resistance is reduced, and device breakover resistance is reduced; the 2DEG concentration of the first area, the 2DEG concentration of the second area, and the 2DEG concentration of the third area at device cut-off time are the same as the 2DEG concentration of the first area, the 2DEG concentration of the second area, and the 2DEG concentration of the third area at the device breakover time, so that the width of an device exhausted area is increased, the distribution of an electric field is changed, and device breakdown voltage is increased; a composite drain electrode structure and a grid source field plate ensure that electric field peak value cannot occur at the edge of the drain electrode and the boundary of a source close to a grid, so that the breakdown voltage is increased.

The invention discloses a super-junction-based AlGaN/GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) high-voltage device and a fabrication method thereof. The structure of the high-voltage device comprises a substrate, a GaN buffer layer, an intrinsic GaN (or AlGaN) channel layer, an AlN isolating layer and an AlGaN barrier layer sequentially from the bottom up, a source, a grid, a drain, a linear AlGaN layer, a grid-source field plate, a P-type GaN (or InGaN) layer and a base are arranged on the AlGaN barrier layer, and an insulating medium layer is also arranged between the grid and the AlGaN barrier layer. The invention has the advantages that: when the device is switched on, the 2DEG (2-dimensional electron gas) concentration of a first region, a second region and a fourth region increases, the resistance decreases, and thereby the purpose of decreasing the on resistance of the device is achieved; when the device is switched off, the 2DEG of the first region is reduced, the 2DEG of the second region and a third region is the same as that when the device is switched on, the width of the depletion region of the device is increased, and thereby the purpose of increasing the breakdown voltage of the device is achieved; the grid-source filed plate ensures that the electric field peak cannot appear at the boundary where the grid is close to the source, thus increasing the breakdown voltage; an insulated grid structure prevents grid leakage current, and thereby the performance of the device is enhanced.

The invention discloses a method for controlling a field emission electronic divergence angle by using a nano carbon tube. The method comprises the steps of: applying a voltage between the carbon tube and a positive pole to form electron field emission by using the multi-wall nano carbon tube as an electron source of field emission; and changing the electric-field distribution of a port of the nano carbon tube through regulating and selecting the length of the extracted outer wall of the nano carbon tube and the voltage applied to the nano carbon tube, controlling the field emission electronic divergence angle, collimation or convergence, and controlling the focusing distance of an electron beam. According to the invention, under the condition without any additional focusing device, the divergence, focusing or collimation of field-emitted electronics is controlled.

The invention discloses a power cable fault simulation device and method utilizing electric arc ignition, and aims to solve technical problems that a requirement of a power cable fault simulation teston test equipment is too high and the test is difficult to carry out in a general laboratory in the prior art. The method comprises the steps that two electrodes are fixedly installed at the two endsof a power cable, a plurality of conductive areas are arranged on the area between the two electrodes at equal intervals through a conductive mixture, the electrodes are connected into a pre-built high-voltage test platform, and an electric arc is generated on the power cable by adjusting the voltage. According to the invention, the gap between the conductive areas can be broken down under a lowvoltage, a continuous and stable arc is generated, and a fault simulation test of igniting the cable by the fault arc is realized.

The invention discloses an array tubular anode assisted laser electrochemical combined machining method and device based on a variable electric field, and relates to the field of micromachining in a non-traditional machining technology. According to the method, an electrochemical loop is formed between tubular anodes and a cathode substrate, the input voltage of a single tubular anode can be adjusted through a voltage adjusting controller, laser penetrates through a liquid crystal mask plate to enter the tubular anodes distributed in an array mode, and a computer controls the liquid crystal mask plate to display a gray level image; the outline of the laser reaching the processing deposition area is the same as the image on the liquid crystal mask plate; in a laser irradiation micro-area, due to the heat effect and the force effect of laser, and the electro-deposition rate is greatly increased; and machining of the whole micro parts or array micro structures is achieved through the array of the tubular anodes. The method is suitable for machining of the micro parts or the array micro structures with complex continuous structures, and is applied to the machining fields of micro manufacturing of micro machinery, micro electro mechanical systems, metal forms, medical treatment, electronics, spaceflight and the like.

The invention discloses a double 90-degree deflection quadrupole plasma mass spectrometer in the technical field of plasma mass spectrometers. Double 90-degree ion deflection focusing assemblies are introduced, so that positive ions pass through a first 90-degree deflection focusing assembly after passing through an interception cone and are separated from electrons and neutral particles in a large amount of ICP ; the separated ions pass through a collision pool and then pass through a second 90-degree deflection focusing assembly, to-be-detected positive ions are separated from interference components newly introduced into the collision pool, and finally the to-be-detected positive ions reach a quadrupole mass analyzer and a detection system for detection of the to-be-detected ions. According to the invention, background noise of instruments is greatly reduced, irrelevant components cannot enter a precise quadrupole separation system, so that the quadrupole separation system and a detection system are not polluted, the device does not need to be frequently cleaned and maintained, long-term reliability of an instrument is ensured, and great convenience is brought to a user.

The invention discloses a high-gain antenna with a microstrip patch antenna loaded with periodic structure, which comprises a dielectric plate, a metal radiator, a metal floor and a periodic leaky wave structure, wherein the structural parameters of the periodic leaky wave structure are set as determined values in an adjustable or solidified manner; and at least one frequency point generated by the periodic leaky wave structure is enabled to be the same as a resonance point of the antenna. The periodic leaky wave structure is embedded in the dielectric plate of the microstrip patch antenna, and the effective dielectric constant of the dielectric plate is changed, so that the electric field distribution of the metal radiator is changed, a relatively high gain can be achieved, and the antenna can obtain a high gain characteristic by adjusting the periodic leaky wave structure. In addition, the high-gain antenna with the microstrip patch antenna loaded with the periodic structure is of a planar structure, the structure is simple, and batch processing and production are facilitated. The high-gain antenna is applied to the technical field of wireless communication.