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Groove charge compensation Schottky semiconductor device and manufacturing method thereof

A charge compensation and conductive semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as large reverse leakage current, low forward turn-on voltage, and high on-resistance

Active Publication Date: 2014-01-15
北海惠科半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have the disadvantages of large reverse leakage current and cannot be used in high-voltage environments.
[0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diode has a sudden electric field distribution curve in the drift region, which affects the reverse breakdown characteristics of the device, while the traditional The planar Schottky diode has a high on-resistance

Method used

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  • Groove charge compensation Schottky semiconductor device and manufacturing method thereof
  • Groove charge compensation Schottky semiconductor device and manufacturing method thereof

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Embodiment 1

[0022] figure 1 It is a sectional view of a trench charge compensation Schottky semiconductor device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0023] A Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located near the inner wall of the trench, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 3E16 / CM 3 ; Schottky barrier juncti...

Embodiment 2

[0032] figure 2 It is a sectional view of a trench charge compensation Schottky semiconductor device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0033] A Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located near the inner wall of the trench, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 3E16 / CM 3 ; Schottky barrier junc...

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Abstract

The invention discloses a groove charge compensation Schottky semiconductor device which is provided with a charge compensation structure. When the semiconductor device is connected with certain back bias voltage, a first conducting semiconductor material and a second conducting semiconductor material can form charge compensation and the back blocking property of a device is improved. A polycrystal semiconductor material is led into the upper portion of the groove so that strength of a peak electric field of Schottky junction surface can be reduced when the semiconductor device is connected with the back bias voltage and the back blocking property of the device is further improved. The invention further provides a manufacturing method of the groove charge compensation Schottky semiconductor device.

Description

technical field [0001] The invention relates to a trench charge compensation Schottky semiconductor device, and also relates to a manufacturing method of the trench charge compensation Schottky semiconductor device. The semiconductor device of the present invention is a basic structure for manufacturing power rectifying devices. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments. [0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diod...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L21/329
CPCH01L29/0634H01L29/66143H01L29/8725
Inventor 朱江
Owner 北海惠科半导体科技有限公司
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