Groove charge compensation Schottky semiconductor device and manufacturing method thereof
A charge compensation and conductive semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as large reverse leakage current, low forward turn-on voltage, and high on-resistance
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Embodiment 1
[0022] figure 1 It is a sectional view of a trench charge compensation Schottky semiconductor device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.
[0023] A Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located near the inner wall of the trench, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 3E16 / CM 3 ; Schottky barrier juncti...
Embodiment 2
[0032] figure 2 It is a sectional view of a trench charge compensation Schottky semiconductor device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.
[0033] A Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located near the inner wall of the trench, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 3E16 / CM 3 ; Schottky barrier junc...
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