The invention provides an SBD device structure and a preparation method thereof. The SBD device structure comprises a substrate, an epitaxial layer grown on the substrate, a nanopillar array preparedin an accommodating groove in the epitaxial layer, a Schottky contact electrode prepared on the epitaxial layer and located in a nanopillar array region, and an ohmic contact electrode prepared on oneside, deviating from the epitaxial layer, of the substrate. According to the method, the Schottky contact area of the anode Schottky type metal-semiconductor of the SBD device is increased by utilizing the nanorods, and the forward conduction characteristic of the SBD device is comprehensively improved from two aspects: on one hand, the nanorods can increase the current density during conduction,so that the saturation current is increased, and the conduction resistance is reduced; and on the other hand, the nanopillar can enhance the control capability of the external bias voltage on the epitaxial layer, and the current driving capability of the SBD device is effectively improved, so that the turn-on voltage of the SBD device is reduced, and the switching loss is reduced.