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Schottky semiconductor device with super junction structure and manufacturing method thereof

A technology of semiconductor and Schottky potential, applied in the field of Schottky semiconductor devices, can solve the problems of high on-resistance, affecting the reverse breakdown characteristics of devices, etc., and achieve the effect of improving the reverse breakdown voltage

Inactive Publication Date: 2013-07-10
盛况 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional trench Schottky diode has a sudden electric field distribution curve in the drift region, which affects the reverse breakdown characteristics of the device. At the same time, the traditional trench Schottky diode has a high on-resistance

Method used

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  • Schottky semiconductor device with super junction structure and manufacturing method thereof
  • Schottky semiconductor device with super junction structure and manufacturing method thereof
  • Schottky semiconductor device with super junction structure and manufacturing method thereof

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Embodiment 1

[0036] figure 1 It is a Schottky semiconductor device with a super junction structure of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0037] A Schottky semiconductor device with a superjunction structure, comprising: a substrate layer 1, which is an N-conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrode is drawn out through the lower surface metal layer 11; the N-type semiconductor silicon material 2, located on the substrate layer 1, is an N-conduction type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ;Lightly doped P-type semiconductor polysilicon material 3, located in the lower part of the trench, is a P-conduction type semiconductor silicon material, and the doping concentration of boron atoms is 1E16 / CM 3 ; Heavily dope...

Embodiment 2

[0049] figure 2 It is a Schottky semiconductor device with a super junction structure of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0050] A Schottky semiconductor device with a superjunction structure, comprising: a substrate layer 1, which is an N-conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrode is drawn out through the lower surface metal layer 11; the N-type semiconductor silicon material 2, located on the substrate layer 1, is an N-conduction type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ;Lightly doped P-type semiconductor silicon material 3, located in the lower part of the trench, is a P-type semiconductor polysilicon material, and the doping concentration of boron atoms is 1E16 / CM 3 The thermal oxidation lay...

Embodiment 3

[0061] image 3 It is a Schottky semiconductor device with a super junction structure of the present invention, combined below image 3 The semiconductor device of the present invention will be described in detail.

[0062] A Schottky semiconductor device with a superjunction structure, comprising: a substrate layer 1, which is an N-conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrode is drawn out through the lower surface metal layer 11; the N-type semiconductor silicon material 2, located on the substrate layer 1, is an N-conduction type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ;Lightly doped P-type semiconductor silicon material 3, located in the lower part of the trench, is a P-type semiconductor silicon material, and the doping concentration of boron atoms is 1E16 / CM 3 The thermal oxidation oxide l...

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Abstract

The invention discloses a schottky semiconductor device with an insulating layer isolation structure and particularly discloses a schottky semiconductor device with a super junction structure and a manufacturing method thereof. Charge compensation can be formed by second conductive semiconductor materials located on the lower portions inside the grooves and first conductive semiconductor materials among the grooves, then the super junction structure is formed; when a semiconductor device is connected with a certain reverse bias voltage, a metal oxide semiconductor (MOS) structure is constructed by the second conductive semiconductor materials which are doped with metal or high-concentration impurities and arranged on the upper portions inside the grooves and insulating medium located on the side surfaces of the grooves, and the pheromone that the barrier height of a schottky barrier is reduced along with rising of the reverse bias voltage is reduced; and besides, the schottky barrier which is capable of forming semiconductor materials P is formed by metal located on the upper portions inside the grooves and the second conductive semiconductor materials located on the lower portions inside the grooves, when the semiconductor device is connected with a forward bias voltage, the schottky barrier is in a reverse bias state, so that forward communication of PN junctions can be effectively restrained, accordingly injection of minority carriers to a drift region is reduced, and a switching characteristic of a device is improved.

Description

technical field [0001] The invention relates to a Schottky semiconductor device with a super junction structure, and also relates to a preparation method of the Schottky semiconductor device with a super junction structure. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices with trench structures have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. Schottky devices also have a large reverse leakage current and cannot be used in high-voltage environments. [0003] Schottky diodes can be fabricated using a number of different layout techniques, the most common being planar layout. A typical trench-type layout is shown in B J Baliga Patent No. 5,612,567. The traditional trench Schottky diode has a sudden electric field distribution curve in the drift region, which affects t...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/872H01L21/329
Inventor 盛况朱江
Owner 盛况
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