Schottky semiconductor device with super junction and preparation method thereof

A semiconductor and super junction technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to solve problems such as high on-resistance, inability to be used in high-voltage environments, and low forward turn-on voltage

Inactive Publication Date: 2013-10-30
朱江
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have the disadvantages of large reverse leakage current and cannot be used in high-voltage environments.
[0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diode has a sudden electric field distribution curve in the drift region, which affects the reverse breakdown characteristics of the device, while the traditional The planar Schottky diode has a high on-resistance

Method used

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  • Schottky semiconductor device with super junction and preparation method thereof
  • Schottky semiconductor device with super junction and preparation method thereof

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Embodiment 1

[0024] figure 1 It is a sectional view of a superjunction Schottky semiconductor device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0025] A Schottky semiconductor device with a super junction, comprising: a substrate layer 1, which is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located on the substrate layer 1, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 N-type Schottky barrier...

Embodiment 2

[0034] figure 2 It is a sectional view of a superjunction Schottky semiconductor device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0035] A Schottky semiconductor device with a super junction, comprising: a substrate layer 1, which is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located on the substrate layer 1, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 N-type Schottky barri...

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Abstract

The invention discloses a Schottky semiconductor device with a super junction. When the semiconductor device is connected with certain reverse bias voltage, a first electricity-conductive semiconductor material and a second electricity-conductive semiconductor material can form charge compensation and form a super junction structure, and therefore the reverse breakdown voltage of a component can be increased, and the conduction character or the blocking character of the component can be improved. The invention further provides a preparation method of the Schottky semiconductor device with the super junction.

Description

technical field [0001] The invention relates to a Schottky semiconductor device with a super junction, and also relates to a method for preparing the Schottky semiconductor device with a super junction. The semiconductor device of the present invention is a basic structure for manufacturing power rectifying devices. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments. [0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diode has a sudde...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/329
Inventor 朱江
Owner 朱江
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