Groove schottky semiconductor device with super junction structure and manufacturing method thereof

A technology of semiconductor and Schottky potential, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as high on-resistance, affecting device reverse breakdown characteristics, etc., to improve reverse breakdown The effect of voltage

Active Publication Date: 2013-07-10
SEMICON MFG ELECTRONICS (SHAOXING) CORP
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional trench Schottky diode has a sudden electric field distribution curve in the drift region, which affects the re

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Groove schottky semiconductor device with super junction structure and manufacturing method thereof
  • Groove schottky semiconductor device with super junction structure and manufacturing method thereof
  • Groove schottky semiconductor device with super junction structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] figure 1 It is a trench Schottky semiconductor device with a super junction structure of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0035] A trench Schottky semiconductor device with a superjunction structure, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrode is drawn out through the lower surface metal layer 11; the N-type semiconductor silicon material 2, located on the substrate layer 1, is an N-conduction type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ;Lightly doped P-type semiconductor polysilicon material 3, located in the lower part of the trench, is a P-type semiconductor polysilicon material, and the doping concentration of boron atoms is 1E16 / CM 3 ;Heavil...

Embodiment 2

[0047] figure 2 It is a trench Schottky semiconductor device with a super junction structure of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0048] A trench Schottky semiconductor device with a superjunction structure, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrode is drawn out through the lower surface metal layer 11; the N-type semiconductor silicon material 2, located on the substrate layer 1, is an N-conduction type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E16 / CM 3;Lightly doped P-type semiconductor polysilicon material 3, located in the lower part of the trench, is a P-type semiconductor polysilicon material, and the doping concentration of boron atoms is 1E16 / CM 3 The th...

Embodiment 3

[0059] figure 2 It is a trench Schottky semiconductor device with a super junction structure of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0060] A trench Schottky semiconductor device with a superjunction structure, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrode is drawn out through the lower surface metal layer 11; the N-type semiconductor silicon material 2, located on the substrate layer 1, is an N-conduction type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ;Lightly doped P-type semiconductor polysilicon material 3, located in the lower part of the trench, is a P-type semiconductor polysilicon material, and the doping concentration of boron atoms is 1E16 / CM 3 The t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a groove schottky semiconductor device with a super junction structure. Charge compensation can be formed by second conductive semiconductor materials located on the lower portions inside grooves and first conductive semiconductor materials among the grooves, then the super junction structure is formed, and reverse breakdown voltages of devices are improved; meanwhile, when a semiconductor device is connected with a certain reverse bias voltage, a metal oxide semiconductor (MOS) structure is constructed by the second conductive semiconductor materials which are doped with metal or high-concentration impurities and arranged on the upper portions inside the grooves and insulating medium located on the side surfaces of the grooves, electric field intensity of drifting materials nearby schottky barrier can be restrained, the pheromone that the barrier height of the schottky barrier is reduced along with rising of the reverse bias voltage is reduced, accordingly reverse leakage current of the devices is reduced, and a reverse blocking characteristic of the devices is improved.

Description

technical field [0001] The invention relates to a trench Schottky semiconductor device with a super junction structure, and also relates to a preparation method of the trench Schottky semiconductor device with a super junction structure. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices with trench structures have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. Schottky devices also have a large reverse leakage current and cannot be used in high-voltage environments. [0003] Schottky diodes can be fabricated using a number of different layout techniques, the most common being planar layout. A typical trench-type layout is shown in B J Baliga Patent No. 5,612,567. The traditional trench Schottky diode has a sudden electric field distribution curve in the drift region, w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/872H01L29/06H01L21/329
Inventor 朱江盛况
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap