A ret IGBT with self-biased pmos and its fabrication method

A self-biasing, split gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as reducing device switching speed, increasing device switching loss, and device breakdown voltage degradation.
CN110504310BActive Publication Date: 2021-04-20UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2021-04-20

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Abstract

The invention belongs to the technical field of power semiconductor devices, and relates to a RET IGBT with self-biased PMOS and a manufacturing method thereof. In the present invention, by placing the N-type charge storage layer between the P-type base region and the P-type buried layer, while improving the forward conduction characteristics of the device, it can shield the influence of the N-type N-type charge storage layer on the breakdown voltage of the device. , by introducing a PMOS structure, an additional path is provided for the extraction of holes, which accelerates the extraction speed of carriers, improves the switching speed of the device, and reduces the turn-off loss of the device. The structure can meet the requirement that the device mesa is further narrowed to improve the forward conduction characteristic of the device, and it is easy to make the metal contact hole of the emitter of the device, and at the same time, the Miller capacitance of the device can be further reduced.
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Description

technical field

[0001] The invention belongs to the technical field of power semiconductor devices, and relates to an insulated gate bipolar transistor (RET IGBT) with a self-biased PMOS emitter embedded trench. Background technique

[0002] Insulated gate bipolar transistor (IGBT) is a new generation of power electronic devices because it combines the advantages of field effect transistor (MOSFET) and bipolar juncture transistor (BJT). It has the advantages of high speed, and it also has the advantages of large on-state current density, low conduction voltage, low loss and good stability of BJT. Therefore, it has developed into one of the core electronic components in modern power electronic circuits, and is widely used in various fields such as transportation, communication, household appliances and aerospace. The use of IGBT has greatly improved the performance of power electronic systems.

[0003] For more than 30 years since the IGBT came out, how to reduce the switch...

Claims

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